Open critical area model and extraction algorithm based on the net flow-axis

In the integrated circuit manufacturing process, the critical area extraction is a bottleneck to the layout optimization and the integrated circuit yield estimation. In this paper, we study the problem that the missing material defects may result in the open circuit fault. Combining the mathematical morphology theory, we present a new computation model and a novel extraction algorithm for the open critical area based on the net flow-axis. Firstly, we find the net flow-axis for different nets. Then, the net flow-edges based on the net flow-axis are obtained. Finally, we can extract the open critical area by the mathematical morphology. Compared with the existing methods, the nets need not to divide into the horizontal nets and the vertical nets, and the experimental results show that our model and algorithm can accurately extract the size of the open critical area and obtain the location information of the open circuit critical area.     

一例镉(Ⅱ)配合物的合成、结构及发光性质研究

镉配合物因其独特的结构及性质而被广泛应用于光学、医药、化学等领域,水热法因其溶剂清洁、操作简单等因素是目前合成配合物方便有效的方法之一。本文以2,6-双(2-吡嗪基)-4,4′-联吡啶(L)、对苯二甲酸和CdCl₂·2.5H₂O为原料,运用水热合成法合成了配位化合物[Cd₂(L)₂(bdc)(H₂O)₄](bdc),用X射线单晶衍射技术、红外光谱分析等手段对所合成配合物进行了结构和发光性质的表征。研究发现:配合物[Cd₂(L)₂(bdc)(H₂O)₄](bdc)属于三斜晶系,P1空间群,晶胞参数为a=1.002 78(17) nm,b=1.044 25(17) nm,c=1.274 8(2) nm,β=78.559(2)°,且具有良好的荧光性能。