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实验表明掺杂是一种改善阻变存储器性能的有效手段,但其物理机理鲜有研究.本文采用第一性原理方法系统研究了过渡金属元素X(X=Mn,Fe,Co,Ni)掺杂对ZnO基阻变存储器中氧空位迁移势垒和形成能的影响.计算结果表明Ni掺杂可同时有效降低+1和+2价氧空位在掺杂原子附近的迁移势垒,X掺杂均减小了氧空位的形成能,特别是掺杂Ni时氧空位的形成能减小最为显著(比未掺杂时减少了64%).基于该结果制备了未掺杂和Ni掺杂ZnO阻变存储器,研究表明通过掺杂控制体系中氧空位的迁移势垒和形成能,可以有效改善器件的初始化过程、操作电压、保持性等阻变性能.研究结果有助于理解探究影响阻变的微观机制,并可为掺杂提高阻变存储器性能提供一定的理论指导. 相似文献
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Considering different contact situations of grains, we effective anisotropies of magnetically soft α-Fe grains, investigate the effects of exchange-coupling interaction on hard Nd2Fe14B grains and NdaFe14B/α-Fe nanocomposite. An expression of effective anisotropy suitable for different degrees of exchange-coupling between grains is presented. The calculation results show that the exchange-coupling interaction increases the average anisotropy of soft grains and decreases that of hard grains. The effective anisotropy of Nd2Fe14B/α-Fe nanocomposite decreases smoothly with decreasing grain size when the grain size is larger than 20 nm while it decreases dramaticaily with further decrease of the grain size. In order to maintain high coercivity in Nd2Fe14B/α-Fe nanoeomposite, the grain size should not be less than 20nm. 相似文献
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