排序方式: 共有2条查询结果,搜索用时 15 毫秒
1
1.
Room-Temperature Ferromagnetism in Zn1-xMnxO Thin Films Deposited by Pulsed Laser Deposition 下载免费PDF全文
Zn1-xMnxO (x = O.Olq3.1) thin films with a Curie temperature above 300K are deposited on Al2O3 (0001) substrates by pulsed laser deposition. X-ray diffraction (XRD), ultraviolet (UV)-visible transmission and Raman spectroscopy are employed to characterize the microstructural properties of these films. Room temperature ferromagnetism is observed by superconducting quantum interference device (SQUID). The results indicate that Mn doping introduces the incorporation of Mn^2+ ions into the ZnO host matrix and the insertion of Mn^2+ ions increases the lattice defects, which is correlated with the ferromagnetism of the obtained films. The doping concentration is also proven to be a crucial factor for obtaining highly ferromagnetic Zn1-xMnxO films. 相似文献
2.
During large diameter Czochralski silicon growth, heat zone and argon flow influence the formation of defects in silicon crystal
by changing the distribution of temperature. Different silicon crystals with various density of grown-in defects were grown
by replacing the popular heater with the composite heater and changing the popular argon flow into a controlled flow. The
experimental results have been explained well by the numeric simulation of argon flow. 相似文献
1