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A compact diode-end-pumped passively Q-switched Nd^3+ :GdVO4/C^r4+ :YAG self-Raman laser at 1176 nm is demonstrated. When the To = 80% Cr^4+:YAG saturable absorber is inserted into the cavity, the maximum Rtaman laser output reaches 175 mW with 3.8 W incident pump power. The optical conversion from incident to the Raman laser is 4.6% and the slope efficiency is 6.5%. The pulse energy, duration, and repetition frequency of the first stokes laser are 4.5μJ, 1.8 ns, and 38.5 kHz, respectively. There is strong blue emission (about 350- 400nm) can be observed in the Nd^3+ :GdVO4 crystal when the process of stimulated Raman scattering occurs, which is induced by the upconversion of the Nd^3+ ions.  相似文献   
2.
探究了弗兰克-赫兹实验的最佳实验条件及第一激发电位,通过分析实验数据得出最佳实验条件为灯丝电压3.3V,第一栅极电压1.7V,拒斥电压5.0V,得到氩原子的第一激发电位为11.543eV,并分析原因.  相似文献   
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