排序方式: 共有14条查询结果,搜索用时 15 毫秒
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用温度场论方法计算了F-L模型在有限温度和密度下的状态方程,分析了压强对净重子数密度的等温线.结果表明,在平均场近似下,F-L模型所给出的退禁闭相变为一级相变. 相似文献
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用温度场论方法计算了F-L模型在有限温度和密度下的状态方程,分析了压强对净重子数密度的等温线.结果表明,在平均场近似下,F-L模型所给出的退禁闭相变为一级相变. 相似文献
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本文探讨了手征孤子模型的高温行为,计算并分析了热效应对手征孤子解及Fermion对凝聚的影响,提出了关于退禁闭相变温度低于手征相变温度的一种可能的物理机制. 相似文献
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基于密度泛函理论(DFT)框架下的第一性原理平面波超软赝势方法(USPP),对不同掺杂情况的ZnO晶体几何结构分别进行了优化计算,从理论上给出了ZnO的晶胞参数,得到了ZnO的总体态密度(TDOS)和氮原子2p态的分波态密度(PDOS).计算结果表明:原胞体积随着掺杂比例的提高而逐渐减小;将氮铝按照2∶1的原子比例共掺可以使氮的掺杂浓度比只掺杂氮时明显提高,且随着铝在锌靶中掺入比例的增加,载流子迁移率提高,浓度增大,使得p型ZnO电导率提高,传导特性增强.
关键词:
共掺
p型传导
态密度
第一性原理 相似文献
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Comparisons of ZnO codoped by group IIIA elements (Al, Ga, In) and N: a first-principle study 下载免费PDF全文
The electronic structures and effective masses of the N mono-doped and Al-N,Ga-N,In-N codoped ZnO system have been calculated by a first-principle method,and comparisons among different doping cases are made.According to the results,the impurity states in the codoping cases are more delocalised compared to the N mono-doping case,which means a better conductive behaviour can be obtained by codoping.Besides,compared to the Al-N and Ga-N codoping cases,the hole effective mass of In-N codoped system is much smaller,indicating the p-type conductivity can be more enhanced by In-N codoping. 相似文献
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Comparisons of ZnO codoped by group ⅢA elements (Al,Ga, In) and N: a first-principle study 下载免费PDF全文
The electronic structures and effective masses of the N mono-doped and Al N, Ga-N, In-N codoped ZnO system have been calculated by a first-principle method, and comparisons among different doping cases are made. According to the results, the impurity states in the codoping cases are more delocalised compared to the N mono-doping case, which means a better conductive behaviour can be obtained by codoping. Besides, compared to the Al-N and Ga-N codoping cases, the hole effective mass of In-N codoped system is much smaller, indicating the p-type conductivity can be more enhanced by In N codoping 相似文献
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氧化锌中中性氮杂质第一性原理研究 总被引:1,自引:0,他引:1
以第一性原理计算为基础,研究了氧化锌中中性氮杂质的原子和电子结构、缺陷形成能等.根据计算结果,氮杂质为深受主,因此对氧化锌的p型导电性没有贡献.在各种中性氮杂质中,替代氧位的氮有最低的形成能和最浅的受主能级,在富氧条件下替代锌位的氮的形成能次之.氮间隙在四面体位置不稳定,会自动弛豫到kick-out结构.尽管氮可能会占据八面体间隙位置,但由于形成能过高因此其浓度会较低.同时还讨论了各种掺杂情形下的电荷密度分布,得到了自洽的结果. 相似文献