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Analysis of the generation mechanism of the S-shaped J—V curves of MoS2/Si-based solar cells 下载免费PDF全文
Amorphous-microcrystalline MoS$_{2}$ thin films are fabricated using the sol-gel method to produce MoS$_{2}$/Si-based solar cells. The generation mechanisms of the S-shaped current density-voltage ($J$-$V$) curves of the solar cells are analyzed. To improve the performance of the solar cells and address the problem of the S-shaped $J$-$V$ curve, a MoS$_{2}$ film and a p$^+$ layer are introduced into the front and back interfaces of the solar cell, respectively, which leads to the formation of a p-n junction between the p-Si and the MoS$_{2}$ film as well as ohmic contacts between the MoS$_{2}$ film and the ITO, improving the S-shaped $J$-$V$ curve. As a result of the high doping characteristics and the high work function of the p$^+$ layer, a high-low junction is formed between the p$^+$ and p layers along with ohmic contacts between the p$^+$ layer and the Ag electrode. Consequently, the S-shaped $J$-$V$ curve is eliminated, and a significantly higher current density is achieved at a high voltage. The device exhibits ideal p-n junction rectification characteristics and achieves a high power-conversion efficiency (CE) of 7.55%. The findings of this study may improve the application of MoS$_{2}$ thin films in silicon-based solar cells, which are expected to be widely used in various silicon-based electronic and optical devices. 相似文献
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Room-Temperature Ferromagnetism in Zn1-xMnxO Thin Films Deposited by Pulsed Laser Deposition 下载免费PDF全文
Zn1-xMnxO (x = O.Olq3.1) thin films with a Curie temperature above 300K are deposited on Al2O3 (0001) substrates by pulsed laser deposition. X-ray diffraction (XRD), ultraviolet (UV)-visible transmission and Raman spectroscopy are employed to characterize the microstructural properties of these films. Room temperature ferromagnetism is observed by superconducting quantum interference device (SQUID). The results indicate that Mn doping introduces the incorporation of Mn^2+ ions into the ZnO host matrix and the insertion of Mn^2+ ions increases the lattice defects, which is correlated with the ferromagnetism of the obtained films. The doping concentration is also proven to be a crucial factor for obtaining highly ferromagnetic Zn1-xMnxO films. 相似文献
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Nucleation mechanism and morphology evolution of MoS_2 flakes grown by chemical vapor deposition 下载免费PDF全文
We study the nucleation mechanism and morphology evolution of MoS_2 flakes grown by chemical vapor deposition(CVD)on SiO_2/Si substrates with using S and MoO_3 powders.The MoS_2 flake is of monolayer with triangular nucleation,which might arise from the initial MoO_3-xthat is deposited on the substrate,and then bonded with S to form MoS_2 flake.The ratio of Mo and S is higher than 1:2 at the beginning with Mo terminated triangular nucleation formed.After that,the morphology of MoS_2 flake evolves from triangle to similar hexagon,then to truncated triangle which is determined by the faster growth speed of Mo termination than that of S termination under the S rich environment.The nucleation density does not increase linearly with the increase of reactant concentration,which could be explained by the two-dimensional nucleation theory. 相似文献
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以培养学生的高阶能力为目标,从案例教学、线上讨论、课下训练3方面对医用物理学课程进行了改革与实践.采用案例教学激发学习兴趣,在解决问题过程中内化所学知识,使思维和能力同时得到提升,恰当的思政元素引入,实现了 1+1>2的育人育才的共同促进.开放性案例的制作设计进一步提高了学生的发现问题、解决问题的能力,使学生获得了成就... 相似文献
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本工作通过调整工作气压,采用螺旋波等离子体辅助射频磁控溅射技术在Al2O3衬底上成功的制备了自然掺杂的p型ZnO薄膜.Hall测量显示在Ar/O2等离子体辅助下,随气压增加所沉积薄膜表现出从n型到p型再到n型的转变.p型ZnO薄膜载流子浓度为1.30×1016cm-3,电阻率为99.68Ω·cm,霍尔迁移率为4cm2·V-1·s-1.X射线衍射和原子力显微镜的分析结果显示ZnO薄膜的导电类型和薄膜的生长特征相关,等离子体中活性粒子载能的减小导致薄膜表面成核几率增加和ZnO晶粒逐渐减小.较高氧活性粒子浓度有利于自然掺杂p型ZnO薄膜生长,而活性氧粒子种类的变化使薄膜生长质量变差,施主缺陷增加,薄膜转化为n型导电. 相似文献
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