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GaN nanorods in a large scale have been synthesized on Si (111) substrates by ammoniating Ga2O3/Mg films under flowing ammonia atmosphere at the temperature of 1000℃ for 15 min. The as-synthesized GaN nanorods are characterized by scanning electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, and highresolution transmission electron microscopy. The results demonstrate that these straight nanorods are hexagonal wurtzite GaN single crystals in diameters ranging from 200 nm to 600 nm. 相似文献
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Syringe-shaped GaN nanorods are synthesized on Si(111) substrates by annealing sputtered Ga2O3/BN films under flowing ammonia at temperature of 950℃. Most of the nanorods consist of a main rod and a top needle, looking like a syringe. X-ray diffraction and selected-area electron diffraction confirm that the syringe-shaped nanorods are hexagonal wurtzite GaN. Scanning electron microscopy and high-resolution transmission electron microscopy reveal that these nanorods are as long as several micrometres, with diameters ranging from 100 to 300nm. In addition to the BN intermediate layer, the proper annealing temperature has been demonstrated to be a crucial factor for the growth of syringe-shaped nanorods by this method. 相似文献
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