An optical study of the D-D neutron irradiation-induced defects in Co-and Cu-doped ZnO wafers

Room-temperature photoluminescence and optical transmittance spectroscopy of Co-doped(1×1014,5×1016,and 1×1017cm-2) and Cu-doped(5×1016cm-2) ZnO wafers irradiated by D-D neutrons(fluence of 2.9×1010 cm-2) have been investigated.After irradiation,the Co or Cu metal and oxide clusters in doped ZnO wafers are dissolved,and the wu¨rtzite structure of ZnO substrate for each sample remains unchanged and keeps in high c-axis preferential orientation.The degree of irradiation-induced crystal disorder reflected from the absorption band tail parameter(E0) is far greater for doped ZnO than the undoped one.Under the same doping concentration,the Cu-doped ZnO wafer has much higher irradiation-induced disorder than the Co-doped one.Photoluminescence measurements indicate that the introduction rate of both the zinc vacancy and the zinc interstitial is much higher for the doped ZnO wafer with a high doping level than the undoped one.In addition,both crystal lattice distortion and defect complexes are suggested to be formed in doped ZnO wafers.Consequently,the Co-or Cu-doped ZnO wafer(especially with a high doping level) exhibits very low radiation hardness compared with the undoped one,and the Cu-doped ZnO wafer is much less radiation-hard than the Co-doped one.     

Oxygen vacancy-induced room-temperature ferromagnetism in D-D neutron irradiated single-crystal TiO2 （001） rutile

Remarkable room temperature ferromagnetism in pure single-crystal rutile TiO2 （001） samples irradiated by D-D neutron has been investigated. By combining X-ray diffraction and positron annihilation lifetime, the contracted lattice has been clearly identified in irradiated TiO2, where Ti4＋ ions can be easily reduced to the state of Ti3＋. As there were no magnetic impurities that could contaminate the samples during the whole procedure, some Ti3＋ ions reside on interstitial or substituted sites accompanied by oxygen vacancies should be responsible for the ferromagnetism.     

关于变数分离的线性偏微分方程的基本解的结构

<正> 对于相当一般的二阶线性非抛物型偏微分方程,Hadamard给出了由方程的系数构造基本解的方法.本文研究的是,当一个二阶线性偏微分算子是变数分离的两个低维的二阶线性偏微分算子之和时,它的方程的基本解与相应于分解后两个低维方程的基本解之间应有的关系.本文给出了这种关系的简明的结构式.     

Optical study of D–D neutron irradiation-induced defects in Co- and Cu-doped ZnO wafers

Room-temperature photoluminescence and optical transmittance spectroscopy of Co-doped (1×10¹⁴,5×10¹⁶, and 1×10¹⁷ cm^-2) and Cu-doped (5×10¹⁶ cm^-2) ZnO wafers irradiated by D-D neutrons (fluence of 2.9×10¹⁰ cm^-2) have been investigated. After irradiation, the Co or Cu metal and oxide clusters in doped ZnO wafers are dissolved, and the würtzite structure of ZnO substrate for each sample remains unchanged and keeps in high c-axis preferential orientation. The degree of irradiation-induced crystal disorder reflected from absorption band tail parameter (E₀) is far greater for doped ZnO than undoped one. Under the same doping concentration, the Cu-doped ZnO wafer has much higher irradiation-induced disorder than the Co-doped one. Photoluminescence measurements indicate that the introduction rate of both zinc vacancy and zinc interstitial is much higher for the doped ZnO wafer with high doping level than the undoped one. In addition, both crystal lattice distortion and defect complexes are suggested to be formed in doped ZnO wafers. Consequently, the Co- or Cu-doped ZnO wafer (especially with high doping level) exhibits very low radiation hardness compared with the undoped one, and the Cu-doped ZnO wafer is much less radiation-hard than the Co-doped one.     

多种图像采集策略下X射线折射信息的提取研究

不同的图像采集策略下,基于分析晶体相衬成像技术的折射信息提取方法(衍射增强成像法、广义衍射增强成像法、多图成像法)的折射角提取结果有明显的差异.与摇摆曲线腰位作为图像采集位置的传统策略相比,采集位置靠近摇摆曲线中轴时,衍射增强成像法能够提取得到更好的折射角结果.广义衍射增强成像法的三个图像采集位置相对摇摆曲线中轴对称时,折射角的提取结果好于采集位置非对称的结果,并且采集位置靠近摇摆曲线中轴时,折射角的提取结果好于摇摆曲线腰位或趾位的结果.对于多图成像法,相邻图像采集位置的角度间隔大于摇摆曲线半高全宽时,折射角提取结果非常差;而当角度间隔小于半高全宽并且图像采集位置对应的角度范围接近样品的最大折射角理论值时,能够获得很好的折射角提取结果.此研究有助于实验上对图像采集策略的合理选择以及对折射信息提取方法的更深理解.