An optical study of the D-D neutron irradiation-induced defects in Co-and Cu-doped ZnO wafers

Room-temperature photoluminescence and optical transmittance spectroscopy of Co-doped(1×1014,5×1016,and 1×1017cm-2) and Cu-doped(5×1016cm-2) ZnO wafers irradiated by D-D neutrons(fluence of 2.9×1010 cm-2) have been investigated.After irradiation,the Co or Cu metal and oxide clusters in doped ZnO wafers are dissolved,and the wu¨rtzite structure of ZnO substrate for each sample remains unchanged and keeps in high c-axis preferential orientation.The degree of irradiation-induced crystal disorder reflected from the absorption band tail parameter(E0) is far greater for doped ZnO than the undoped one.Under the same doping concentration,the Cu-doped ZnO wafer has much higher irradiation-induced disorder than the Co-doped one.Photoluminescence measurements indicate that the introduction rate of both the zinc vacancy and the zinc interstitial is much higher for the doped ZnO wafer with a high doping level than the undoped one.In addition,both crystal lattice distortion and defect complexes are suggested to be formed in doped ZnO wafers.Consequently,the Co-or Cu-doped ZnO wafer(especially with a high doping level) exhibits very low radiation hardness compared with the undoped one,and the Cu-doped ZnO wafer is much less radiation-hard than the Co-doped one.     

用于强流中子发生器的低能束流传输线的设计模拟

兰州大学设计研发的ZF-400强流中子发生器设计D-T中子产额6×1012 n/s,主要由ECR离子源、低能束流传输线（LEBT）、加速管、旋转靶等部分组成。LEBT负责将从离子源引出的束流进行分析聚焦并注入到加速管中。LEBT对束流的聚焦及分析的好坏程度决定了加速管中束流的损失程度、中子的产额以及靶的寿命。本工作就该强流中子发生器所需的低能传输线进行了设计。使用螺线管、分析磁铁和四极透镜组合的方案。利用TRACK软件对此方案进行模拟,得到符合要求的束流线及元件的参数。用TraceWin进行了验证模拟,验证结果符合要求。另外,通过软件模拟确定了杂质离子损失的位置,据此设计了束流管道冷却方案。通过模拟发现,这种透镜的组合方式可以让整个LEBT以较低的功率获得低损失、高纯度的打靶束流。The ZF-400 Intense Neutron Generator, which is designed by Lanzhou University with an expected neutron yield of 6×1012 n/s, is consist of ECR ion source, low energy beam transport (LEBT) line, accelerating tube and rotating target. The beam extracted from ECR source is analyzed and focused through LEBT, then, the beam is introduced into the accelerating tube. The focus and analysis ability of LEBT is very important for the beam loss, neutron yield and target's life. A LEBT line for intense neutron generator is designed in this paper, the project consisted of a solenoid, a bend magnet and three quadrupole lens. The qualified LEBT and its parameters have been got through the simulation with TRACK code. Then TraceWin program was employed to check this simulation and the result satisfied our requirement. Besides, the loss position of impurity ions was known through the simulation, and a project of beam line's cooling system was designed according to this result. Through the simulation, we find the optimal lens combination plan which can obtain lower beam loss and higher beam purity at low running power of LEBT.     

Oxygen vacancy-induced room-temperature ferromagnetism in D-D neutron irradiated single-crystal TiO2 （001） rutile

Remarkable room temperature ferromagnetism in pure single-crystal rutile TiO2 （001） samples irradiated by D-D neutron has been investigated. By combining X-ray diffraction and positron annihilation lifetime, the contracted lattice has been clearly identified in irradiated TiO2, where Ti4＋ ions can be easily reduced to the state of Ti3＋. As there were no magnetic impurities that could contaminate the samples during the whole procedure, some Ti3＋ ions reside on interstitial or substituted sites accompanied by oxygen vacancies should be responsible for the ferromagnetism.     

格蕴涵N序半群中的sl理想

研究由格蕴涵代数所诱导的格蕴涵N序半群的sl理想的代数特性，给出了格蕴涵代数L中的LI-理想与相应的格蕴涵N序半群中的sl理想以及理想之间的关系定理，并对由集合A所生成的sl理想进行了刻画。最后，讨论了L中的准素sl理想和素sl理想之间的关系。     

关于一类有限格蕴涵代数方程的解法

研究一类含有有限个未知量且含有蕴涵算子的格蕴涵代数方程,给出方程有解的充分必要条件。在方程的解集非空时,讨论解集的一些结构性质。并刻画出方程在具有某种限制条件下的整个解集。最后,相关结论被应用到一个数值例子。     

关于模糊集合的公理化定义

基于对模糊现象的本质及其特征的深入分析,提出了关于模糊现象本质的新认识,建立了隶属度的公理系统,在此基础之上,定义了模糊划分的概念,并基于模糊划分给出了模糊集合的公理化定义.本文基于模糊隶属空间所建立的公理化模糊集合能够为从“全局”或“整体”上处理模糊信息提供一种有效的数学模型.     

Energy and structure of copper clusters （n=70-150） studied by the Monte Carlo computer simulation

The structure and binding energy of copper clusters of the size range 70 to 150 were studied by using the embeddedatom method. The stability of the structure of the clusters was studied by calculating the average binding energy per atom, first difference energy and second difference energy of copper cluster. Most of the copper clusters of the size n=70-150 adopt an icosahedral structure. The results show that the trends are in agreement with theoretic prediction for copper clusters. The most stable structures for copper clusters are found at n=77, 90, 95, 131, 139.     

锥束CT成像质量影响因素研究

CT成像质量受诸多因素影响,有必要系统地研究各因素带来的影响以得到更好的成像效果。基于兰州大学核科学与技术学院研制的锥束CT系统,在近探测器几何条件下,采用一铝制标准件,通过对比实验研究了投影采集范围及步长、管电压及管电流、焦点尺寸、样品在转台位置、硬化校正和图像优化等因素对CT系统成像质量的影响。结果表明,当投影采集完备时,投影采集范围对成像质量影响较小,减小扫描步长能提高成像质量;适当提高管电压能降低硬化伪影,提高管电流能减小图像噪声;较小的焦点尺寸能提高图像空间分辨率,但在近探测器几何条件下不明显;样品在转台位置不影响CT系统还原样品结构;硬化校正能明显消除硬化伪影;最后,对于单一材质样品通过阈值去噪能优化图像质量。以上研究为CT系统的研制和应用提供了参考。     

磁控溅射气体团簇源中团簇形成的DSMC研究

利用直接模拟蒙特卡洛方法(DSMC) ,模拟了磁控溅射气体团簇源中Cu+ (Cu-)的含量比例不同的条件下,Cu团簇的尺寸分布。模拟结果表明：随着含量比例的增加,团簇的尺寸分布变窄了,不带电的团簇的比例增加,不带电的铜团簇分布的最大值减小,相应的带正电荷和带负电荷团簇的比例减小;相同的含量比例下,带正电的团簇的尺寸分布与带负电荷的团簇的尺寸分布基本相同;初始Cu- 比Cu+ 的含量比例大时,输出的主要是带负电荷的团簇,带正电荷和不带电的团簇占很小的比例;Cu-含量比例的增加,负Cu团簇的尺寸分布减小。     

Optical study of D–D neutron irradiation-induced defects in Co- and Cu-doped ZnO wafers

Room-temperature photoluminescence and optical transmittance spectroscopy of Co-doped (1×10¹⁴,5×10¹⁶, and 1×10¹⁷ cm^-2) and Cu-doped (5×10¹⁶ cm^-2) ZnO wafers irradiated by D-D neutrons (fluence of 2.9×10¹⁰ cm^-2) have been investigated. After irradiation, the Co or Cu metal and oxide clusters in doped ZnO wafers are dissolved, and the würtzite structure of ZnO substrate for each sample remains unchanged and keeps in high c-axis preferential orientation. The degree of irradiation-induced crystal disorder reflected from absorption band tail parameter (E₀) is far greater for doped ZnO than undoped one. Under the same doping concentration, the Cu-doped ZnO wafer has much higher irradiation-induced disorder than the Co-doped one. Photoluminescence measurements indicate that the introduction rate of both zinc vacancy and zinc interstitial is much higher for the doped ZnO wafer with high doping level than the undoped one. In addition, both crystal lattice distortion and defect complexes are suggested to be formed in doped ZnO wafers. Consequently, the Co- or Cu-doped ZnO wafer (especially with high doping level) exhibits very low radiation hardness compared with the undoped one, and the Cu-doped ZnO wafer is much less radiation-hard than the Co-doped one.