空间用倒装三结太阳能电池及其抗辐射性能研究

使用金属有机化学气相沉积技术,在4英寸GaAs衬底上获得了空间用GaInP/GaAs/In_(0.3)Ga_(0.7)As倒装三结太阳能电池.高分辨X射线衍射和阴极射线发光测试结果表明AlInGaAs应力渐变缓冲层的晶格弛豫度约100%,其整面平均穿透位错密度约5.4×10~6/cm~2.与GaInP/InGaAs/Ge常规三结太阳能电池相比,在AM0光谱、25℃测试条件下,面积24 cm~2的倒装三结太阳能电池转换效率达到32%,输出功率提高了5%.采用1 MeV高能电子对倒装三结电池进行粒子辐照测试,电池各项性能参数随不同辐照剂量发生改变,在1×10~(15)/cm~2辐照总剂量下电池转换效率衰降比例达到15%.     

轻质柔性GaInP/Ga(In)As/Ge三结太阳电池及其性能研究

为了研究柔性太阳能电池的性能,通过太阳能电池减薄工艺制备出轻质柔性Ga In P/Ga(In)As/Ge三结太阳能电池芯片。尺寸为40 mm×60 mm的电池芯片重量为0.7 g,仅为常规175μm厚度电池重量的30%。验证了柔性电池工艺的可行性,制得的柔性电池转换效率达到了30.64%,同常规厚度电池十分接近。对比测试了两种样品不同温度下的暗电流曲线,拟合了两种电池样品的温度系数,结果表明:电池的温度系数与衬底类型无关,只与电池PN结本身相关。     

Growth parameter dependence of magnetic property of CrAs thin film

This paper has systematically investigated the substrate temperature and thickness dependence of surface morphology and magnetic property of CrAs compound films grown on GaAs by molecular-beam epitaxy. It finds that the substrate temperature affects the surface morphology and magnetic property of CrAs thin film more potently than the thickness.     

Cr-Doped InAs Self-Organized Diluted Magnetic Quantum Dots with Room-Temperature Ferromagnetism

Cr-doped InAs self-organized diluted magnetic quantum dots （QDs） are grown by low-temperature molecularbeam epitaxy. Magnetic measurements reveal that the Curie temperature of all the InAs：Cr QDs layers with Cr/In flux ratio changing from 0.026 to 0.18 is beyond 400 K. High-resolution cross sectional transmission electron microscopy images indicate that InAs：Cr QDs are of the zincblende structure. Possible origins responsible for the high Curie temperature are discussed.