Concise Modeling of Amorphous Dual-Gate In-Ga-Zn-O Thin-Film Transistors for Integrated Circuit Designs

An analytical model for current–voltage behavior of amorphous In-Ga-Zn-O thin-film transistors(a-IGZO TFTs)with dual-gate structures is developed.The unified expressions for synchronous and asynchronous operating modes are derived on the basis of channel charges,which are controlled by gate voltage.It is proven that the threshold voltage of asynchronous dual-gate IGZO TFTs is adjusted in proportion to the ratio of top insulating capacitance to the bottom insulating capacitance(C_(TI)/C_(BI)).Incorporating the proposed model with Verilog-A,a touch-sensing circuit using dual-gate structure is investigated by SPICE simulations.Comparison shows that the touch sensitivity is increased by the dual-gate IGZO TFT structure.     

温跃层及其变化对被动声纳检测概率的影响

根据被动声纳工作原理,构建被动声纳探测水下目标物概率数学模型。利用声学调查实测数据,综合考虑传播损失、环境噪声、和水文环境分布及季节变化,研究温跃层垂直分布及季节变化对声纳检测概率的影响。结果表明:温跃层对被动声纳影响巨大,逆温跃层环境中,声纳检测概率从海表向下逐渐减小;正温跃层对声纳总的影响与逆温跃层相反,在正温跃层上界,检测概率从表层向下先减小后增大;逆温跃层对被动声纳检测概率的影响随目标物与声纳距离的增大而增大,正温跃层影响相反。     

DNA折纸术研究进展

DNA折纸术是近年来提出的一种全新的DNA自组装的方法,是DNA纳米技术与DNA自组装领域的一个重大进展。与传统的DNA自组装技术不同,DNA折纸术通过将一条长的DNA单链(通常为基因组DNA)与一系列经过设计的短DNA片段进行碱基互补,能够可控地构造出高度复杂的纳米图案或结构,在新兴的纳米领域中具有广泛的潜在应用。本文在介绍DNA折纸术相关原理的基础上,就DNA折纸术的起源、发展及其在DNA芯片、纳米元件与材料等领域的潜在应用进行了概述,探讨了DNA折纸术未来可能的发展方向。