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1.
The attosecond laser station(ALS) at the Synergetic Extreme Condition User Facility(SECUF) is a sophisticated and user-friendly platform for the investigation of the electron dynamics in atoms, molecules, and condensed matter on timescales ranging from tens of femtoseconds to tens of attoseconds. Short and tunable coherent extreme-ultraviolet(XUV)light sources based on high-order harmonic generation in atomic gases are being developed to drive a variety of endstations for inspecting and controlling ultrafast electron dynamics in real time. The combination of such light sources and end-stations offers a route to investigate fundamental physical processes in atoms, molecules, and condensed matter. The ALS consists of four beamlines, each containing a light source designed specifically for application experiments that will be performed in its own end-station. The first beamline will produce broadband XUV light for attosecond photoelectron spectroscopy and attosecond transient absorption spectroscopy. It is also capable of performing attosecond streaking to characterize isolated attosecond pulses and will allow studies on the electron dynamics in atoms, moleculars, and condensed matter. The second XUV beamline will produce narrowband femtosecond XUV pulses for time-resolved and angle-resolved photoelectron spectroscopy, to study the electronic dynamics on the timescale of fundamental correlations and interactions in solids, especially in superconductors and topological insulators. The third beamline will produce broadband XUV pulses for attosecond coincidence spectroscopy in a cold-target recoil-ion momentum spectrometer, to study the ultrafast dynamics and reactions in atomic and molecular systems. The last beamline produces broadband attosecond XUV pulses designed for time-resolved photoemission electron microscopy, to study the ultrafast dynamics of plasmons in nanostructures and the surfaces of solid materials with high temporal and spatial resolutions simultaneously. The main object of the ALS is to provide domestic and international scientists with unique tools to study fundamental processes in physics, chemistry,biology, and material sciences with ultrafast temporal resolutions on the atomic scale. 相似文献
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Improved device reliability in organic light emitting devices by controlling the etching of indium zinc oxide anode 下载免费PDF全文
A controllable etching process for indium zinc oxide (IZO) films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electrode with smoothed surface morphology and slope edge was achieved. For the practical application in organic light emitting devices (OLEDs), a sup- pression of the leak current in the current-voltage characteristics of OLEDs was observed. It resulted in a 1.6 times longer half lifetime in the IZO-based OLEDs compared to that using an indium tin oxide (ITO) anode etched by a conventional strong etchant of aqua regia. 相似文献
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应用密度泛函理论,在B3LYP/LanL2DZ水平上对C2对称性的混配络合物[M(bpy)2(phen)]2+和[M(phen)2(bpy)]2+(M=Ru、Os;bpy=2,2'-bipyridine;phen=1,10-phenanthroline)在水溶液中的几何构型进行了优化,并用TDDFT/B3LYP方法和相同的基组计算了其激发能、旋转强度和振子强度,绘制了相应的圆二色谱(CD).在分析有关跃迁性质的基础上,对实验圆二色谱的谱带进行了明确的解析和指认,同时讨论了短波区激子裂分的规律性.结果表明:四种络合物在长波区(λ>320nm)的CD吸收带主要是由d-π*跃迁产生的荷移谱带;短波区(λ<320nm)则是配体上平行于长轴的π-π*跃迁产生的激子耦合带,且对于Λ构型表现为正的手性激子裂分.其中,[M(bpy)2(phen)]2+只显示出正负两个激子带,分属于联吡啶和邻菲咯啉配体;而[M(phen)2(bpy)]2+则有三个激子带,其中左侧的两个(一负一正)属于邻菲咯啉配体,右侧的正带则属于联吡啶配体.此外,尽管激子耦合属于远程相互作用,但用TDDFT计算的激子裂分样式仍是正确的.这些结论对于深入理解有... 相似文献
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文章通过引进一类具有非零元素链的矩阵,利用α对角占优矩阵性质,给出了一个新的非奇H矩阵的充分条件,扩大了非奇H矩阵的判定范围. 相似文献
9.
We have measured the synchrotron radiation photoelectron spectra of monolayer C60on Ag(100), By calculating the intensity ratios between the LUMO bands and the two deeper bands (HOMO and HOMO- 1), we estimate the amount of the charges transferred from Ag(100) to C60 within the range of 1 e to 1.8 e. The results dismay the expectation of surface superconductivity and afford a good reference for further studies of the monolayer C60/Ag(100) system. 相似文献
10.
X-ray absorption near the edge structure and x-ray photoelectron spectroscopy studies on pyrite prepared by thermally sulfurizing iron films 下载免费PDF全文
This paper reports how pyrite films were prepared by thermal sulfurization of magnetron sputtered iron films and characterized by x-ray absorption near edge structure spectra and x-ray photoelectron spectroscopy on a 4B9B beam line at the Beijing Synchrotron Radiation Facility.The band gap of the pyrite agrees well with the optical band gap obtained by a spectrophotometer.The octahedral symmetry of pyrite leads to the splitting of the d orbit into t 2g and e g levels.The high spin and low spin states were analysed through the difference of electron exchange interaction and the orbital crystal field.Only when the crystal field splitting is higher than 1.5 eV,the two weak peaks above the white lines can appear,and this was approved by experiments in the present work. 相似文献