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Optical Characterization of β-FeSi2 Thin Films Prepared by Femtosecond Laser Ablation 总被引:3,自引:0,他引:3 下载免费PDF全文
Iron disilicide thin films are prepared on fused quartz using femtosecond laser deposition (FsPLD) with a FeSi2 alloy target. X-ray diffraction results indicate the films are single-phase, orthorhombic, β-FeSi2. Field scanning electron microscopy, high resolution transmission electron microscopy, UV-VIS-NIR spectroscopy and Raman microscope are used to characterize the structure, composition, and optical properties of the β-FeSi2 films. Normal incidence spectral transmittance and reflectance data indicate a minimum, direct energy gap of 0.85 eV. The two most intense lines of Raman scattering peaked at 181.3 cm^-1 and 235.6cm^-1 for the film on fused quartz, and at 191.2cm^-1 and 243.8cm^-1 for the film on Si (100), are observed. 相似文献
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通过对不同晶系线性电光系数矩阵的分析计算,研究了利用晶体电光系数γ51实现电光调制的可能性.结果分析表明,在电场中的γ51引起折射率的变化与x方向电场强度E12成正比;利用KTa0.35Nb0.65O3晶体的巨大γ51参数引起的二次电光效应,可以获得较低的半波电压;在立方-四方相变点附近的KTa1-xNbxO3晶体有极大克尔系数的现象,同时γ51参数电光效应也得到了解释. 相似文献
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