钨酸钇钠晶体中Tm3+的光谱特性

测量了Tm³⁺:NaY(WO4)₂晶体的吸收光谱、发射光谱和激发光谱，利用J_O理论计算了钨酸钇钠晶体的强度参数：Ω₂=7.21304×10^-20cm²，Ω4=0.504766×10^-20cm²，Ω6=0.977784 ×10^-20cm²，以及Tm³⁺光学参数包括各能级的荧光寿命和荧光分支     

A Passive Q-Switched Microchip Er/Yb Glass Laser Pumped by Laser Diode

A laser-diode-pumped 1.54-μm passive Q-switched erbium doped glass laser was reported. We utilize a laser diode with wavelength of 973nm to pump a 1-mm Er/Yb co-doped phosphate glass with the erbium and ytterbium concentrations of 1 wt.% and 21 wt.%, respectively. A Co^2＋ ：MgAl2O4 slab crystal was used as a passive Q- switcher. Q-switched pulses with repetition frequency of 800Hz, width of 7.4ns, peak power of 2.2kW and average power of 13.3 m W were obtained when absorbed pump power was 4 75 m W. A sandwich structure of the Q- switched microchip Er/Yb glass laser was demonstrated, which shows shorter pulse width of 6.8 ns. Dependences of pulse duration and repetition frequency on pump power were also investigated.     

近场扫描光学显微镜及其探针技术研究新进展

对近场扫描光学显微技术(NSOM)研究与应用新进展作了概括介绍,较详细地阐述了NSOM的关键部件——探针技术的发展,并对NSOM的前景作了展望。     

Low-Frequency Noise in Amorphous Indium Zinc Oxide Thin Film Transistors with Aluminum Oxide Gate Insulator

Low-frequency noise(LFN) in all operation regions of amorphous indium zinc oxide(a-IZO) thin film transistors(TFTs) with an aluminum oxide gate insulator is investigated. Based on the LFN measured results, we extract the distribution of localized states in the band gap and the spatial distribution of border traps in the gate dielectric,and study the dependence of measured noise on the characteristic temperature of localized states for a-IZO TFTs with Al_2 O_3 gate dielectric. Further study on the LFN measured results shows that the gate voltage dependent noise data closely obey the mobility fluctuation model, and the average Hooge's parameter is about 1.18×10~(-3).Considering the relationship between the free carrier number and the field effect mobility, we simulate the LFN using the △N-△μ model, and the total trap density near the IZO/oxide interface is about 1.23×10~(18) cm~(-3)eV~(-1).     

LD抽运Er3+，Yb3+共掺磷酸盐玻璃被动调Q激光器的理论分析和数值计算

研究了以Co²⁺:MgAl₂O₄晶体为饱和吸收体的LD抽运Er³⁺,Yb³⁺共掺磷酸盐玻璃激光器.针对双掺离子之间的能量传递和Er³⁺的多种跃迁过程，结合Co²⁺:MgAl₂O₄晶体中Co²⁺离子的饱和吸收特性，给出了详尽的速率方程，在其基础上进行了数值分析，分析了输出镜透过率、激光介质长度、谐振腔长度、腔内往返损耗、饱和吸收体长度对激光阈值、峰值功率、单脉冲能量以及脉冲宽度的影响.     

集成传感器接口电路设计实现

本文介绍了一种MOS-BJT复合结构集成传感器接口电路的设计和实现结果。该接口电路输入阻抗高,频响宽（大于7MHz）,特别适用具有“有源栅”结构的压电、热电、离子敏等集成传感器应用。     

准相位匹配周期极化掺镁铌酸锂490 nm倍频连续输出

在室温下通过外加电场极化法,首次用较低的极化开关电场～5.5 kV/mm,在厚为1 mm、长为20 mm、宽为18 mm的掺镁铌酸锂基片上成功的制备了周期为4.8～5.2 μm的一阶准相位匹配倍频光学微结构;并在室温下,以波长为980 nm的半导体激光器为基频光源,对所研制的微结构样品进行倍频通光实验,在入射基频光为800 mW时,产生约40 mW的490 nm的倍频光,其对应转换效率为5%,实验过程中未见绿致吸收光折变现象.     

LD抽运Er3+,Yb3+共掺磷酸盐玻璃被动调Q激光器的理论分析和数值计算

研究了以Co2+:MgAl2O4晶体为饱和吸收体的LD抽运Er3+,Yb3+共掺磷酸盐玻璃激光器.针对双掺离子之间的能量传递和Er3+的多种跃迁过程,结合Co2+:MgAl2O4晶体中Co2+离子的饱和吸收特性,给出了详尽的速率方程,在其基础上进行了数值分析,分析了输出镜透过率、激光介质长度、谐振腔长度、腔内往返损耗、饱和吸收体长度对激光阈值、峰值功率、单脉冲能量以及脉冲宽度的影响.     

弹跳运动中混沌现象的电子模拟

给出了一个电子实验电路，用以模拟刚性小球在振动台面上的弹跳运动，可给出在逐渐增大台面的振动幅度或振动频率时，小球表现出的从规则运动到无规运动的各种动力学行为。     

钨酸钇钠晶体中Tm3+的光谱特性

测量了Tm3 :NaY(WO4 ) 2 晶体的吸收光谱、发射光谱和激发光谱 ,利用J_O理论计算了钨酸钇钠晶体的强度参数 :Ω2 =7 2 130 4× 10 - 2 0 cm2 ,Ω4 =0 5 0 4 76 6× 10 - 2 0 cm2 ,Ω6 =0 977784× 10 - 2 0 cm2 ,以及Tm3 的光学参数包括各能级的荧光寿命和荧光分支比、积分发射截面等 ,在计算了Tm3 的自发辐射概率时 ,同时考虑了电偶极跃迁和磁偶极跃迁 .研究了其发光特性和跃迁通道 ,发现存在1 D2 3H6 →1 G4 3F4 的交叉弛豫