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1.
激光技术的不断发展对激光薄膜的光学性能、激光损伤阈值、机械性能等提出了越来越高的要求。具有低吸收损耗的激光薄膜在强激光、精密测量等领域有十分重要的应用。从电子束蒸发和离子束溅射沉积工艺、薄膜材料两个方面,对激光薄膜在吸收损耗控制方面的研究进展进行综述,详细介绍了制备过程中多个环节对薄膜吸收损耗的调控方法,以及单一材料和混合物薄膜的吸收机理、吸收调控方法。  相似文献   
2.
概述了本课题组在KDP类晶体快速生长领域的研究及进展情况.通过集成生长设备的管道系统、升级连续过滤系统、研发晶体生长过程的实时监控系统以及高精度退火设备,实现晶体生长系统的集成化;通过数值模拟优化晶体表面流场状态、全流程量化控制实现晶体稳定生长以及精密热退火进一步提升晶体性能;针对点籽晶快速生长KDP类晶体中存在的柱锥交界面问题,相继提出了长籽晶锥区限制生长法和长籽晶自由生长法,为大尺寸高性能KDP类晶体生长提供新的技术方案.  相似文献   
3.
A time-resolved high-power laser photometer, which measures the real-time variations of transmission, internal reflection, and scattering simultaneously with picosecond time resolution, was developed to investigate the material response sequence during high-power nanosecond laser irradiation in thick fused silica. It was found that the transient transmission decreased sharply, accompanied by an increase in internal reflection at the rising edge of the laser pulse. The transient transmission recovered, while laser damage did not occur, but it did not recover if the scattering increased, indicating the occurrence of laser damage. The reason for the sharp decrease of transmission and the relationship between the transmission drop and laser damage were discussed.  相似文献   
4.
HfO2薄膜生长应力演化研究   总被引:1,自引:1,他引:0  
薄膜应力的存在是薄膜材料的本征特性,对过程中薄膜应力的测量与精确控制具有重要意义.搭建了基于双光束偏转基底曲率测量装置,再结合薄膜厚度的实时监控,实现了对薄膜应力演化过程的观测.对HfO2薄膜的生长过程做了实时研究.结果显示,在所研究条件下,HfO2薄膜的生长应力随厚度的增加,在360~660 MPa范围内变化;沉积温度越高,沉积真空度越高,张应力越大;在真空度较高的沉积条件下,薄膜应力强烈地受到基底表面的影响,随着薄膜厚度的增加,应力也趋于稳定.  相似文献   
5.
Based on polarization state conversion, a technique for coaxially coherent combination of laser beams is introduced. Laser beams can be coaxially coupled into one beam with high combination efficiency and perfect beam quality. A polarized laser beam combination system based on master oscillator power amplifier (MOPA) configuration is developed and the efficiencies of both unit combination and the whole system are investigated. In the experiment of combining four beams with single longitudinal mode, a combination efficiency of 85.3% is achieved. It can be further enhanced by improving the stability of experimental environment and the quality of optical and mechanical components.  相似文献   
6.
<正>The optical performance of thin film polarizers is highly sensitive to the layer thicknesses of thin film.The thicknesses of the sensitive layers are optimized in order to gain broader polarizing zone in such case when the total layer thickness does not increase.An automatic layer thickness control system is established,and errors caused by different monitoring methods are analyzed.With this thickness control system,thin-film polarizers with T_p higher than 98%and T_p/T_s higher than 200:1(T_p and T_s are transmissions for p- and s-polarizations,respectively) with the bandwidth of 11 nm are prepared.Using the system allows for optimum repeatability of three successive runs.  相似文献   
7.
 为了研制低损耗、高性能的193 nm氟化物增透膜,研究了基底和不同氟化物材料组合对氟化物增透膜的影响。在熔石英基底上,将挡板法和预镀层技术相结合,采用热舟蒸发方式制备了不同氟化物材料组合增透膜,对增透膜的剩余反射率和光学损耗等光学特性,以及表面粗糙度和应力等特性进行了测量和比较。在分析比较和优化的基础上,设计制备的3层1/4波长规整膜系AlF3/LaF3增透膜在193 nm的剩余反射率低于0.14%,单面镀膜增透膜的透射率为93.85%,增透膜表面均方根粗糙度为0.979 nm,总的损耗约为6%。要得到高性能的193 nm增透膜,应选用超级抛光基底。  相似文献   
8.
研究了电场在介质膜光栅结构中的增强效应对其抗激光损伤阈值的影响.使用傅里叶模式方法计算了电场在介质膜光栅浮雕结构内的分布.数值分析表明:电场在介质膜光栅中增强的最大值为入射光的2倍,其最大的位置出现在相对于入射光对面的光栅槽侧壁。实验测试介质膜光栅样品在1 064 nm和12 ns, 51.2°和TE偏振光入射时,其抗激光损伤阈值为6.61 J/cm2.对损伤形貌进行扫描电镜精确分析,发现介质膜光栅的初始损伤产生于电场在介质膜光栅内增强最大的位置处.  相似文献   
9.
In the comparison of damage modifications, absorption measurement and energy dispersive x-ray analysis, the effect of vacuum on the laser-induced damage of anti-reflection coatings is analyzed. It is found that vacuum decreases the laser-induced damage threshold of the films. The low laser-induced damage threshold in vacuum environments as opposed to air environments is attributed to water absorption and the formation of the O/Si, O/Zr sub-stoichiometry in the course of laser irradiation.  相似文献   
10.
Ta2O5 films are deposited on fused silica substrates by conventional e-beam evaporation. Surface topography and chemical composition are examined by atomic force microscopy (AFM) and x-ray photoelectron spectroscopy (XPS). The calculation of electron structures of Ta2O5 and Ta2O5-x is attempted using a first-principle pseudopotential method within the local density approximation. The laser-induced damage threshold (LIDT) is performed at 1064, 532 and 355 nm in 1-on-1 regime, respectively. The results show that the LIDT increases with the wavelength increasing, which is in agreement with the wavelength effect. However, the LIDT results are not consistent with the empirical equation (I(λ)=aλm), which may be attributed to the intrinsic absorption of Ta2O5 at the wavelengths of 532 or/and 355 nm. Moreover, different damage morphologies are observed when the films are irradiated at different wavelengths. It is concluded that the laser damage at 1064 nm is the defect dominant mechanism and at 355 nm it is the intrinsic absorption dominant mechanism, whereas at 532 nm it is the combined defect and intrinsic absorption dominant mechanism.  相似文献   
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