加速方法数学建模的若干研究

介绍了利用可积系统理论研究加速计算方法的数学建模的一些最新工作。首先给出了向量形式的E-变换的一种推广,并构造了计算这个序列变换的数学模型。此外,给出了Pfaff式的一种具体定义,这样定义的Pfaff式可以应用于序列变换的表示。     

Retina imaging by using compact line scanning quasi-confocal ophthalmoscope

A compact line scanning quasi-confocal ophthalmoscope (LSO) is presented in this letter. Compared with a conventional scanning laser ophthalmoscope (SLO), the bench-top LSO significantly reduces the size, complexity, and cost of SLO utility with routine use. The LSO uses one moving part to produce high-contrast and high-resolution quasi-confocal images with nearly the same performance as a SLO. The LSO has a moderate field of view (～10 ), which enables images of the macula, the optic nerve head, and other targets to be obtained more quickly and efficiently. An image of the optic nerve head is taken in a preliminary investigation on human subjects. Individual nerve fiber bundles and vessels are resolved at a shallow depth, with a lateral resolution of nearly 10 μm.     

Experimental verification of the parasitic bipolar amplification effect in PMOS single event transients

The contribution of parasitic bipolar amplification to SETs is experimentally verified using two P-hit target chains in the normal layout and in the special layout. For PMOSs in the normal layout, the single-event charge collection is composed of diffusion, drift, and the parasitic bipolar effect, while for PMOSs in the special layout, the parasitic bipolar junction transistor cannot turn on. Heavy ion experimental results show that PMOSs without parasitic bipolar amplification have a 21.4% decrease in the average SET pulse width and roughly a 40.2% reduction in the SET cross-section.     

The dual role of multiple-transistor charge sharing collection in single-event transients

As technologies scale down in size, multiple-transistors being affected by a single ion has become a universal phenomenon, and some new effects are present in single event transients (SETs) due to the charge sharing collection of the adjacent multiple-transistors. In this paper, not only the off-state p-channel metal-oxide semiconductor field-effect transistor (PMOS FET), but also the on-state PMOS is struck by a heavy-ion in the two-transistor inverter chain, due to the charge sharing collection and the electrical interaction. The SET induced by striking the off-state PMOS is efficiently mitigated by the pulse quenching effect, but the SET induced by striking the on-state PMOS becomes dominant. It is indicated in this study that in the advanced technologies, the SET will no longer just be induced by an ion striking the off-state transistor, and the SET sensitive region will no longer just surround the off-state transistor either, as it is in the older technologies. We also discuss this issue in a three-transistor inverter in depth, and the study illustrates that the three-transistor inverter is still a better replacement for spaceborne integrated circuit design in advanced technologies.     

高速线扫描共焦检眼镜

高速线扫描共焦检眼镜使用线光束照明眼底视网膜,同时利用线阵CCD对视网膜平面的单次散射线光束探测成像。系统光学放大率为7倍,横向分辨率小于10μm,对于58kHz线频的1024pixel×512pixel成像模式,成像帧频高达110frame/s。该系统实现了高分辨率、高帧频模拟人眼实验图像的获取。     

p型金属氧化物半导体场效应晶体管界面态的积累对单粒子电荷共享收集的影响

由于负偏置温度不稳定性和热载流子注入,p型金属氧化物半导体场效应晶体管(pMOSFET)将在工作中不断退化,而其SiO₂/Si界面处界面态的积累是导致其退化的主要原因之一. 采用三维器件数值模拟方法,基于130 nm体硅工艺,研究了界面态的积累对相邻pMOSFET之间单粒子电荷共享收集的影响. 研究发现,随着pMOSFET SiO₂/Si界面处界面态的积累,相邻pMOSFET漏端的单粒子电荷共享收集量均减少. 还研究了界面态的积累对相邻反相器中单粒子电荷共享收集 关键词： 负偏置温度不稳定性 电荷共享收集 双极放大效应 单粒子多瞬态     

光瞳半径对纯位相调制激光束整形系统的影响

光瞳截断作用对纯位相调制激光束整形系统的系统性能有重要影响. 本文提出了一种关于光瞳半径对近场调制位相和远场系统评价函数影响的定量分析方法. 通过拉格朗日乘数法等方法分析光瞳半径对近场调制位相的影响, 结果表明: 近场调制位相随光瞳半径近似线性增加. 通过建立数学模型, 拟合分析光瞳半径对系统评价函数的影响. 结果表明: 对方形目标光强, 系统评价函数拟合精度确定系数达到99%左右, 光瞳半径为2.5倍高斯光束束腰半径时, 相关系数达到0.997, 光强偏离残差平方均值达到0.0004左右, 光瞳截断作用趋于最小; 对圆形目标光强, 系统评价函数拟合精度确定系数达到97%, 光瞳半径为3倍高斯光束束腰半径时, 相关系数与光强偏离残差平方均值变化幅度均在10^-3量级, 系统评价函数趋于收敛, 光瞳截断作用趋于最小.     

Suppressing the hot carrier injection degradation rate in total ionizing dose effect hardened nMOSFETs

Annular gate nMOSFETs are frequently used in spaceborne integrated circuits due to their intrinsic good capability of resisting total ionizing dose (TID) effect. However, their capability of resisting the hot carrier effect (HCE) has also been proven to be very weak. In this paper, the reason why the annular gate nMOSFETs have good TID but bad HCE resistance is discussed in detail, and an improved design to locate the source contacts only along one side of the annular gate is used to weaken the HCE degradation. The good TID and HCE hardened capability of the design are verified by the experiments for I/O and core nMOSFETs in a 0.18 μm bulk CMOS technology. In addition, the shortcoming of this design is also discussed and the TID and the HCE characteristics of the replacers (the annular source nMOSFETs) are also studied to provide a possible alternative for the designers.