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GaMnN/GaN multilayers and conventional GaMnN single layers are grown by metal-organic chemical vapor deposition. Both kinds of samples show room-temperature ferromagnetism. After thermal annealing, the sample with GaMnN/GaN multilayer structure displays a larger coercivity and better thermal stability compared to the GaMnN single layer. The annealing effects on Vca related defects are observed from photoluminescenee measurements. Moreover, a different magnetic behavior is also found in the annealed GaMnN films grown on different (n-type GaN and p-type GaN) templates. These kinds of structure-dependent magnetic behaviors indicate that defects or carriers transformation introduced during annealing may have important effects on the electronic structure of Mn ions and on the ferromagnetism. Our work may be helpful for further understanding the origin of ferromagnetism in GaN-based diluted magnetic semiconductors.  相似文献
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