用自适应脉冲微扰引导混沌系统到周期解

用自适应脉冲微扰方法控制的系统的某个系统变量作为驱动,设计了一种自适应控制器方法对两个或多个响应混沌系统进行脉冲微扰,引导这些系统从混沌运动到低周期运动,实现同时控制多个混沌系统到不同的周期态. 当选择相同的自适应控制器输入变量实施脉冲微扰时,还可控制两个或多个混沌系统达到不同的周期态同步. 通过对R?ssler混沌系统的仿真研究证实了方法的有效性.  

Analysis of Local Structures around Ni Atoms Doped in ZnO-Based Diluted Magnetic Semiconductors by Fluorescence EXAFS

Zn1-xNixO （x = 0.001, 0.01, 0.02, 0.05 and 0.20） powders are prepared by sol-gel method. An extended x-ray absorption fine structure technique （EXAFS） for the Ni K.edge is employed to probe the local structures around Ni atoms doped in ZnO powders by fluorescence mode. The near edge EXAFS of the samples does not change in the range of Ni concentration from x = 0.001 to 0.05, which is consistent with the results of x-ray diffraction of the samples. The simulation results for the first shell EXAFS signals indicated that Ni atoms are substituted in Zn sites.  

关于折射率对散射光场分布影响的研究

根据Mie散射理论,采用理论计算和实验相结合的手法,研究了光散射现象以及散射介质的折射率对散射光场分布的影响.通过对空气中不同折射率的散射介质形成的散射光场光强的实验比较,论证了散射介质折射率的实部变化对散射光强的影响不大,其主要影响是通过对相位的变化来实现的,也即散射介质折射率的虚部变化对光强的影响很大,在实际应用中不可忽略.这一结论对以散射光场的分布为基础的各种研究具有一定的指导意义.  

土壤重金属铅元素的X射线荧光光谱测量分析

在实验室条件下,利用NITON XLt793型便携式X射线荧光光谱重金属分析仪测量并分析土壤中铅元素的X射线荧光光谱特性。分别以铅的Lα(10.55keV)和Lβ(12.61keV)特征谱线作为分析线,分析了不同基体元素对分析线的影响;测定在不同铅浓度下的特征谱线强度变化。结果表明铅的质量分数在10×10-6～1 800×10-6范围内,元素的光谱强度与浓度之间呈现较好的线性关系;建立了铅元素的定标曲线,并计算得到铅的检出限为7.89×10-6。  

Structural and Magnetic Properties of Codoped ZnO based Diluted Magnetic Semiconductors

Zn1-xCoxO （x = 0.01, 0.02, 0.05, 0.10 and 0.20） diluted magnetic semiconductors are prepared by the sol-gel method. The structural and magnetic properties of the samples are studied using x-ray diffraction （XRD）, extended x-ray absorption fine structure （EXAFS） and superconducting quantum interference device （SQUID）. The XRD patterns does not show any signal of precipitates that are different from wurtzite type ZnO when Co content is lower than x = 0.10. An EXAFS technique for the Co K-edge has been employed to probe the local structures around Co atoms doped in ZnO powders by fluorescence mode. The simulation results for the first shell EXAFS signals indicate that Zn sites can be substituted by Co atoms when Co content is lower than x = 0.05. The SQUID results show that the samples （x 〈 0.05） exhibit clear hysteresis loops at 300K, and magnetization versus temperature from 5 K to 350K at H = 100 Oe for the sample x = 0.02 shows that the samples have ferromagnetism above room temperature. A double-exchange mechanism is proposed to explain the ferromagnetic properties of the samples.  

Growth and Characterization of InN Thin Films on Sapphire by MOCVD

Indium nitride thin films are grown on sapphire substrates by metal-organic chemical vapour deposition （MOCVD） By employing three-step layer buffers, the mirror-like layers on two-inch sapphire wafers have been obtained. The structural, optical and electrical characteristics of InN are investigated by x-ray diffraction, scanning electron microscopy, atomic force microscopy, photoluminescence and infrared optical absorption. The photoluminescence and the absorption studies of the materials reveal a marked energy bandgap structure around 0.70eV at room temperature. The room-temperature Hall mobility and carrier concentration of the film are typically 939 cm^2 /Vs, and 3.9 × 1018cm^-3, respectively.  

MOCVD Growth and Characterization of Epitaxial AlxGa1-xN Films

We study the growth of AlxGa1-x N epilayers on （0001） sapphire by low-pressure MOCVD, using a lowtemperature AIN buffer. By varying the input flow rates of trimethylgallium （TMGa）, we obtain crack-free AlGaN films in the whole range of composition. A linear relationship between gas and solid Al content is observed. The structural properties of the layers （x =0- 1） are investigated by x-ray diffraction, atomic force microscopy （AFM） and scanning electron microscopy （SEM）. It is found that a two-direction growth appears along the c-axis and the （1011） directions for x ≥ 0.45. From the results of Raman spectroscopy, we suggest that the compressive stain and the lack of mobility orAl adatoms can induce the formation of （1011） grains.  

High-Reflectivity A1GaN/A1N Distributed Bragg Reflector in Ultraviolet Region

Thirty-pair Alo.3 Gao.T N/A1N distributed Bragg reflectors centred at 32Ohm are designed and grown on sapphire substrates by metalorganic chemical vapour deposition. No cracks are observed in the main area of the 2-inch wafer except for about 4 mm margin under an optical microscope. Regular stack of alternating layers is shown by scanning electron microscopy. Clear two-dimensional growth steps and very low surface roughness are shown by atomic force microscopy （AFM）. Well-defined periodicity is shown by high resolution x-ray diffraction. High refiectivity of 93% at 313nm with a bandwidth of 13nm is obtained.  

Investigation into the Energy Band Diagram and Charge Distribution in A1GaN／GaN Double Heterostructures by Self-Consistent Poisson-Schroedinger Calculations

The energy band diagram and charge distribution of the unintentional doped AIGaN/GaN/AIGaN/GaN double heterostructure were obtained by self-consistent Poisson Schroedinger calculations. The severe band tilting and high two-dimensional electron gas (2DEG) density mainly attribute to the large internal polarization intensity,which is c/ose to a linear function orAl composition. The influence orAl composition is investigated. The results show that band tilting enlarges and 2DEG gains with AI composition, and two-dimensional hole gas occurs when AI composition reaches a certain extent. The influence orAl composition and two-dimensional hole gas (2DHG)on devices is discussed.  

Surface States in the AlxGa1-xN Barrier in AlxGa1-xN／GaN Heterostructures

Frequency-dependent capacitance-voltage (C-V) measurements have been performed on modulation-doped Al0.22 Ga0.78N/GaN heterostructures to investigate the characteristics of the surface states in the AlxGa1-xN barrier. Numerical fittings based on the experimental data indicate that there are surface states with high density locating on the AlxGa1-xN barrier. The density of the surface states is about 10^12cm^-2eV^-1, and the time constant is about 1μs. It is found that an insulating layer (Si3N4) between the metal contact and the surface of AlxGa1-xN can passlvate the surface states effectively.