全文获取类型
收费全文 | 30篇 |
免费 | 53篇 |
国内免费 | 15篇 |
专业分类
化学 | 6篇 |
综合类 | 1篇 |
数学 | 7篇 |
物理学 | 84篇 |
出版年
2018年 | 1篇 |
2015年 | 1篇 |
2014年 | 3篇 |
2013年 | 6篇 |
2012年 | 7篇 |
2011年 | 11篇 |
2010年 | 1篇 |
2009年 | 6篇 |
2008年 | 5篇 |
2007年 | 3篇 |
2006年 | 6篇 |
2005年 | 4篇 |
2004年 | 3篇 |
2003年 | 3篇 |
2002年 | 4篇 |
2001年 | 3篇 |
1999年 | 3篇 |
1998年 | 2篇 |
1997年 | 1篇 |
1996年 | 5篇 |
1995年 | 2篇 |
1993年 | 3篇 |
1992年 | 2篇 |
1991年 | 1篇 |
1990年 | 1篇 |
1989年 | 1篇 |
1988年 | 1篇 |
1986年 | 1篇 |
1985年 | 1篇 |
1983年 | 3篇 |
1981年 | 1篇 |
1974年 | 1篇 |
1966年 | 1篇 |
1961年 | 1篇 |
排序方式: 共有98条查询结果,搜索用时 15 毫秒
1.
Sixteen-element Ge-on-SOI PIN photo-detector arrays for parallel optical interconnects 总被引:1,自引:0,他引:1 下载免费PDF全文
We describe the structure and testing of one-dimensional array parallel-optics photo-detectors with 16 photodiodes of which each diode operates up to 8 Gb/s. The single element is vertical and top illuminated 30μm-diameter silicon on insulator (Ge-on-SOI) PIN photodetector. High-quality Ge absorption layer is epitaxially grown on SO1 substrate by the ultra-high vacuum chemical vapor deposition (UHV-CVD). The photodiode exhibits a good responsivity of 0.20 A/W at a wavelength of 1550 nm. The dark current is as low as 0.36/aA at a reverse bias of 1 V, and the corresponding current density is about 51 mA/cm2. The detector with a diameter of 30 t.trn is measured at an incident light of 1.55 μm and 0.5 mW, and the 3-dB bandwidth is 7.39 GHz without bias and 13.9 GHz at a reverse bias of 3 V. The 16 devices show a good consistency. 相似文献
2.
Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon 下载免费PDF全文
Strain-compensated Ge/Si0.15Ge0.85 multiple quantum wells were grown on an Si0.1>Ge0.9 virtual substrate using ultrahigh vacuum chemical vapor deposition technology on an n+-Si(001) substrate. Photoluminescence measurements were performed at room temperature, and the quantum confinement effect of the direct-bandgap transitions of a Ge quantum well was observed, which is in good agreement with the calculated results. The luminescence mechanism was discussed by recombination rate analysis and the temperature dependence of the luminescence spectrum. 相似文献
3.
A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er+ ions 下载免费PDF全文
This paper compares the properties of silicon oxide and nitride as host matrices for Er ions.Erbium-doped silicon nitride films were deposited by a plasma-enhanced chemical-vapour deposition system.After deposition,the films were implanted with Er3+ at different doses.Er-doped thermal grown silicon oxide films were prepared at the same time as references.Photoluminescence features of Er3+ were inspected systematically.It is found that silicon nitride films are suitable for high concentration doping and the thermal quenching effect is not severe.However,a very high annealing temperature up to 1200° C is needed to optically activate Er3+,which may be the main obstacle to impede the application of Er-doped silicon nitride. 相似文献
4.
本文设计了一种基于Franz-Keldysh (FK) 效应的GeSi电吸收调制器. 调制器集成了脊形硅单模波导. 光由脊形硅波导以倏逝波形式耦合进锗硅吸收层. 在硅基锗二极管FK效应实验测试的基础上, 有源区调制层锗硅中的硅组分设计为1.19%, 从而使得器件工作在C (1528–1560 nm) 波段. 模拟结果显示该调制器的3 dB带宽可达64 GHz, 消光比为8.8 dB, 而插损仅为2.7 dB.
关键词:
锗硅
调制器
电光集成 相似文献
5.
使用低、高温两步法生长的高质量Ge薄膜作为缓冲层,在Si(001)衬底上采用分子束外延法生长出Ge0.975Sn0.025合金薄膜.X射线双晶衍射和卢瑟福背散射谱等测试结果表明,Ge0.975Sn0.025合金薄膜具有很好的晶体质量,并且没有发生Sn表面分凝.另外,Ge0.975Sn0.025合金薄膜在500 ℃下具有很好的热稳定性,有望在Si基光电器件中得到应用.
关键词:
GeSn
Ge
分子束外延
外延生长 相似文献
6.
7.
GaN非线性光学效应研究进展 总被引:1,自引:0,他引:1
本文简述了对非线性光学材料的一般要求,详细介绍了GaN材料的极化效应,以及因此而具有的良好非线性光学效应。以波长转换为例说明了它在未来全光网络中的应用前景。 相似文献
8.
The Transformation of Clay Minerals in Triassic Mudstone of North Shaanxi Province During Burial Metamorphism 总被引:2,自引:0,他引:2
According to the analysis of X-ray diffraction and the investigation under electron microscope (SEM, TEM) of clay minerals, the transformation of clay minerals in Triassic mudstone during burial metamorphism has been studied in detail. Berthierine, the mixed layer of illite and chlorite, and the changeable texture from berthierine to chlorite have been first discovered in the paper; and then it is considered that the transformation of clay minerals during burial metamorphism is shown in the following reaction: Smectite+ Kaolinite + K~+ = lllite + Chlorite + Quartz. The metamorphic temperature of the above reaction is about 160—220℃, according to the calculation of oxygen isotope geothermometry of illite and quartz. The study of crystallinity and polytype of illite and chlorite shows that the different indexes have varied in regular way, and have certain functional relationship between them. 相似文献
9.
10.
提高Si基材料高效率发光途径的探索 总被引:6,自引:0,他引:6
近来人们对发展硅基光电子学作出了很大的努力。众所周知,如同晶体管是微电子学的核心器件一样,发光器件将是光电子学的关键部件。然而由于硅属间接带隙材料,发光效率比直接带隙的GaAs等化合物材料低三个多量级,因此如何在硅基材料系实现高效率发光,已成为发展硅基光电子学的重要课题,它吸收着国际上众多科学、工程家们的巨大兴趣。能带工程的应用可能将提供一条有望的途径。本文总结评述了近几年来在SiGe量子阱能带工程,Er3+离子注入发光中心掺杂工程、直接带隙β—FeSi2材料工程以及热电子跃迁发光带内子能级工程中所取得的重要进展。本文同时对其未来的发展提出了若干设想与展望。 相似文献