Low-Temperature Growth of Polycrystalline silicon Films by SiCl4／H2 rf Plasma Enhanced Chemical Vapour Deposition

Polycrystalline silicon film was directly fabricated at 200℃ by the conventional plasma enhanced chemical vapour deposition method from SiCl4 with H2 dilution. The crystallization depends strongly on the deposition power.The maximum crystMlinity and the crystalline grain size are over 80% and 200—50Onm, respectively. The results of energy dispersive spectroscopy and infrared spectroscopy measurements demonstrate that the film is mostly composed of silicon, without impurities such as Cl, N, C and bonded H. It is suggested that the crystallization at such a low temperature originates from the effects of chlorine, i.e., in-situ chemical, etching, in-situ chemical cleaning, and the detachment of bonded H.     

非晶硅薄膜的低温快速晶化及其结构分析

在镀铝的廉价玻璃衬底上高速沉积的非晶硅薄膜在不同的温度下退火10min.退火温度为500℃时,薄膜表面形成了硅铝的混合相,非晶硅薄膜开始呈现了晶化现象 退火温度为550℃时,大部分(约80%)的非晶硅晶化为多晶硅,平均晶粒尺寸为500nm 退火温度为600℃时,几乎所有的非晶硅都转化为多晶硅,其平均晶粒尺寸约为15μm.     

基片光学特性对薄膜光强透过谱的影响

在考虑基片与空气界面反射率以及基片吸收不能忽略的情况下，对常见的基片上薄膜的光强透过率公式进行了修正，导出了该情况下的透过率公式．以非晶硅薄膜为研究对象，采用模拟计算说明基片光学特性对薄膜光强透过谱的影响．     

A Movable Mass Spectroscopy Sampling Apparatus for Measuring Spatial Distribution of Neutral Radicals in Silane Plasma

A movable mass spectroscopy gas sampling apparatus has been established and a straight-line fit of silane depletion fraction f is proposed. The spatial density distributions of SiHn (n=0-3) radicals in silane radio frequency glow discharge have been measured by a mass spectrometer. The experimental results demonstrate that the densities of the neutral radicals have the peak value near the middle position of electrodes, and the densities of SiH2 and SiH3 are higher than those of Si and SiH in silane plasma. This reveals that SiH2 and SiH3 may be the primary precursors in forming the a-Si:H film.     

用SiCl4-H2低温沉积多晶硅薄膜微结构的Raman分析

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射频辉光放电等离子体的电探针诊断及数据处理

Langmuir探针是等离子体诊断的一个重要方法.对探针I-V曲线进行求解二次微商是获得等离子体中的电子能量分布函数的关键.由Fourier变换导出一个求解微商的数值解方法.克服了现有方法所存在的缺点.实现了对探针I-V曲线求解二次微商的精确、自动运算.测量了硅烷射频辉光放电等离子体的平均电子能量(温度)和浓度随放电功率的变化. 关键词：     

The reliability of measurements on electron energy distribution function in silane rf glow discharges

Electron energy distribution function (EEDF) is a key parameter of plasmas, which is directly proportional to the second derivative of the probe I-V characteristics. Because of an amplifying effect of unavoidable noises in the experimental probe I-V curves during the derivation process, the experimental I-V curves should be smoothed before performing the numerical derivation. This paper investigates the effect of adjustable factors used in the smoothing process on the deduced second derivative of the I-V curves, and an optimum group of the adjustable factors is selected to make the rms deviation of the smoothed I-V curves from the measured curves less than 1%. A simple differentiation circuit is designed and used to measure the EEDF parameter straightforwardly. It is the first time, so far as we know, to measure the EEDF parameters simultaneously by means of both numerical and circuit derivative methods under the same discharge conditions and on the same discharge equipment. The deviation between two groups of mean electron energy E and electron density n_e obtained by the above different methods is within about 7%. This apparently improves the reliability of the measurements of the EEDF parameters.     

Effects of Flow Rate Variation on SiCln （n 〈 3） Densities in SICl4 Plasmas

Radicals produced by the plasma enhanced chemistry vapour deposition technique in SiCl4 plasma are identified by mass spectrometry using our newly proposed straight-line fit method. Since flow rate is one of the most important parameters in depositing thin films, we present the effects of SiCl4 flow rate variation on SiCln （n 〈 3） densities. The experimental results demonstrate that Si and SiCln （n = 1, 2） densities decrease with increasing SiCl4 flow rate. After reaching the minimum values at a flow rate of 17 and 13sccm, respectively, Si and SiCln （n = 1, 2） densities slightly increase with further increase of flow rate to 20.5sccm. These results could be interpreted to which the depletion fraction of SiCl4 decreases and the residence time of SiCl4 molecule becomes shorter, with the increasing SICl4 flow rate. In order to obtain high-quality poly-Si films with high growth rate, it is better to use smaller flow rate of SICl4 source gas for depositing films.     

多晶硅薄膜低温生长中晶粒大小的控制

以SiCl4H2为气源,用等离子体增强化学气相沉积(PECVD)方法低温快速沉积多晶硅薄膜.实验发现,在多晶硅薄膜的生长过程中,气相空间各种活性基团的相对浓度是影响晶粒大小的重要因素,随功率、H2/SiCl4流量比的减小和反应室气压的增加,晶粒增大.而各种活性基团的相对浓度依赖于PECVD工艺参数,通过工艺参数的改变,分析生长过程中空间各种活性基团相对浓度的变化,指出“气相结晶”过程是晶粒长大的一个重要因素. 关键词： 气相结晶 多晶硅薄膜 晶粒生长 SiCl4     

氢化非晶硅薄膜中氢含量及键合模式的红外分析

Fourier红外透射(FTIR)谱技术是研究氢化非晶硅（a-Si∶H）薄膜中氢的含量（CH）及硅—氢键合模式（Si-Hn）最有效的手段.对用等离子体化学气相沉积（PCVD）方法在不同的衬底温度（Ts）下制备出的氢化非晶硅薄膜，通过红外透射光谱的基线拟合、高斯拟合分析，得到了薄膜中的氢含量，硅氢键合模式及其组分，并分析了这些参量随衬底温度变化的规律.