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Compositional and Structural Properties of TiO2-xNx Thin Films Deposited by Radio-Frequency Magnetron Sputtering 下载免费PDF全文
TiO2-xNx thin films are deposited onto Si(100) and quartz substrates by arf magnetron sputtering method using a titanium metal disc as a target in Ar, N2, and 02 atmospheres. The substrate temperature is kept at 300℃. The O2 and Ar gas flow rates are kept to be constants and the N gas flow rate is varied. TiO2-xNx films with different N contents are characterized by x-ray diffraction and x-ray photoelectron spectroscopy. The results indicate that the TiO2-xNx thin films can be obtained at 13% N and 15% N contents in the film, and the films with mixed TiO2 and TiN crystal can be obtained at 13% N and 15% N contents in the film. In terms of the results of x-ray photoelectron spectroscopy, N ls of β-N (396 eV) is the main component in the TiO2-xNx thin films. Because the energy level of β-N is positioned above the valence-band maximum of TiO2, an effective optical-energy gap decreases from 2.8 eV (for pure TiO2 film deposited by the same rf sputtering system) to 2.3 eV, which is verified by the optical-absorption spectra. 相似文献
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构建了煤质检测系统D-T中子源采用的3层屏蔽结构:第1层采用铁、不锈钢、钨等不同慢化材料,第2层采用含不同碳化硼质量分数的聚乙烯,第3层采用铅.利用MCNP5程序计算了不同屏蔽结构的中子透射率和中子占比.模拟结果表明:第1层为25cm厚钨,第2层采用含碳化硼质量分数为20%的15cm厚聚乙烯材料,第3层采用5cm厚铅,屏蔽效果最佳. 相似文献
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