磁随机存储器中垂直电流驱动的磁性隧道结自由层的磁化翻转

在基于磁性隧道结(Magnetic Tunneling Junction，MTJ)的磁随机存储器(Magnetoresistantive Random Access Memory，MRAM)中利用通过MTJ的垂直电流，实现信息写入的新方法，同时给出了基于此新方法的一种新的MRAM结构和驱动原理图，并分析了它的读和写操作的可行性具体过程. 关键词： 垂直电流 磁性隧道结 磁随机存储器     

熵函数法的数学理论

１．引言考虑复合函数其中ｇ;：Ｒ"－Ｒ,ｉ＝１,２,...;。连续可微．因的ｘ）的不可微性,涉及的ｘ）的优化问题,如极大极小问题Ｉｒｌｍｌｎｏｔｘｊ．ｆｉｊＺＦＲ"通常属不可微优化范畴．文山借助最大嫡原理推导出一类一致逼近一（Ｘ）的可微函数（称之为妨函数）Ｏ。ｉｌｌ--一ｉｆｌｙｌｌＸＤＣＱ．ｌｏｌｌ．ＩＪｊ容易证明ｔｉｍ人一中且对任意ｘＥＲ",ＣＭ＋ＯＯｇｂｃｌ（ｌ＞ｏｆｃ。（ｌ,ＶＣＺ＞ＣＩ＞０,（４ｉｌｌｆｆｉ０＜ｕｌ。（）ｄｉ（］＜．（５基于该性质,文山一【４］通过一次取定较大有限值Ｃ。＞０,将…     

INTER-GRAIN EXCHANGE INTERACTION FOR SINGLE-PHASE NANOCRYSTALLINE Nd-Fe-B MAGNETS

The demagnetization curve as a function of intensity of the inter-grain exchange interaction was calculated for single-phase nanocrystalline Nd-Fe-B magnets by use of the finite-element technique of micromagnetics. Also, the strength of the exchange interaction was estimated as a function of the Nd content x for the nanocrystalline Nd_xFe_94-xB₆ magnets by comparing the above result with the experimental relation between _iH_c and x for the magnets. We found that the inter-grain exchange interaction decreases with the increase of x, are ≈70% and ≈60% of the inter-grain exchange interaction for x=15.5(μ_0iH_c≈2.0T) and x=19(μ_0iH_c≈2.3T), respectively.     

EFFECT OF α-Fe SURFACE LAYER ON THE MAGNETIC REVERSION PROCESS FOR Nd2Fe14B CRYSTAL

The demagnetization process for a Nd₂Fe₁₄B grain covered by an α-Fe layer was studied by use of the finite element technique of micromagnetics. μ_0iH_c decreases with the increase of α-Fe layer thickness t. With the increase of t from 0 to 6nm, μ_0iH_c decreases from ～7 T to ～3.5 T when the angle between the applied field and the c-axis of the Nd₂Fe₁₄B grain is 0.5° and from ～4 T to ～1.5 T when the angle is 30° or 60°. The effect is only slightly affected by the angle between the α-Fe layer and the field direction.     

Vortex domain structures and dc currentdependence of magneto-resistances in magnetic tunnel junctions

Microfabrication and the magneto-transport characteristics of the magnetic tunnel junctions (MTJs) with a spin-valve-type structure of Ta (5nm)/Ni79Fe21 (25nm)/Ir22MnTs (12nm)/Co75Fe25 (4nm)/Al(0.8nm) oxide/Co75Fe25(4nm)/Ni79Fe21 (20nm)/Ta(5nm) were investigated in this paper. A series of experimental data measured with a MTJ was used to verify a magnon-assisted tunnelling model and theory. Furthermore, a micromagnetics simulation shows that the butterfly-like vortex domain structures can be formed under a current-induced Oersted field, which decreases the net magnetization values of the ferromagnetic electrodes under a large de current (i.e., in high voltage regimes). It is one of the main reasons for the tunnel magnetoresistance ratios to decrease significantly at high voltage biasing.     

ANISOTROPIC CHARACTERISTICS OF DEMAGNETIZATION CURVE FOR NANOCRYSTALLINE Nd-Fe-B MAGNET CALCULATED BY MICROMAGNETICS

The demagnetization curves for nanocrystalline Nd-Fe-B magnets of a stoichiometric composition were calculated by making use of the finite element technique of micromagnetics. The curve, especially _iH_c, varies in a wide range with the direction of applied field if the grain number N is taken to be small. With the increase of N, the range becomes smaller and the average of _iH_c decreases and approaches a limit _iH_c(N=∞). _iH_c for finite N is larger than, or at least equal to, _iH_c(N=∞). J_r/J_s is weakly affected by N and the field direction. J_r/J_s(N=∞) decreases with the increase of grain size L. These are larger than the experimental values for the Nd-rich Nd_2.33Fe₁₄B_1.06Si_0.21 magnets by ～0.05. _iH_c(N=∞) increases with the increase of L, and is close to or somewhat smaller than the experimental values of the Nd-rich magnet, as would be expected. In contrast, the curve calculated for the non-interacting grain system (Stoner-Wohlfarth model) of N≥30 depends neither on the field direction nor on N.