Electrochemical reduction of 1-([(4-halophenyl)imino]methyl)-2-naphthols in aprotic media.

The electrochemical reduction of 1-([(4-halophenyl)imino]methyl)-2-naphthols on graphite electrodes was studied using cyclic voltammetry, chronoamperometry, constant-potential coulometry and preparative constant-potential electrolysis techniques. The data revealed that the reduction on graphite was irreversible and followed an EC mechanism. The diffusion coefficients and the number of electrons transferred were determined using the chronoamperometric Cottrell slope and the ultramicro disc Pt-electrode steady-state current. The number of electrons was also determined by bulk electrolysis. The compounds were subjected to constant-potential preparative electrolysis and the electrolysis products were purified and identified by spectroscopic methods. Based on these findings, a mechanism for the electro-reduction process is proposed.     

Suzuki coupling reactions of 2,4,6-trialkoxyphenylboronic acids with enol triflates: asymmetric synthesis of a lactone template for calyxin assemblage

Suzuki coupling reactions between 2,4,6-trialkoxyphenylboronic acids and enol triflates have been found to occur in excellent yield, while the use of an enol tosylate failed to give any of the desired product. This coupling reaction has led to the synthesis of a lactone which could serve as a precursor to several calyxin analogues.     

Anodic Voltammetric Determination of an Atypical Antipsychotic Drug Amisulphide in Pharmaceutical Dosage Forms Using Electrochemical fsDNA Biosensor

Russian Journal of Electrochemistry - In this study, a new biosensor for amisulpride (ASP) determination is defined. The interaction between ASP and fish sperm double-stranded DNA (FSdsDNA) was...     

A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN-based high-frequency power electronics

Metal–organic chemical vapor deposition (MOCVD) is one of the best growth methods for GaN-based materials as well-known. GaN-based materials with very quality are grown the MOCVD, so we used this growth technique to grow InAlN/GaN and AlN/GaN heterostructures in this study. The structural and surface properties of ultrathin barrier AlN/GaN and InAlN/GaN heterostructures are studied by X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements. Screw, edge, and total dislocation densities for the grown samples have been calculated by using XRD results. The lowest dislocation density is found to be 1.69 × 10⁸ cm⁻² for Sample B with a lattice-matched In_0.17Al_0.83N barrier. The crystal quality of the studied samples is determined using (002) symmetric and (102) asymmetric diffractions of the GaN material. In terms of the surface roughness, although reference sample has a lower value as 0.27 nm of root mean square values (RMS), Sample A with 4-nm AlN barrier layer exhibits the highest rough surface as 1.52 nm of RMS. The structural quality of the studied samples is significantly affected by the barrier layer thickness. The obtained structural properties of the samples are very important for potential applications like high-electron mobility transistors (HEMTs).     

N-(phenylthio)-epsilon-caprolactam: a new promoter for the activation of thioglycosides

N-(phenylthio)-epsilon-caprolactam (1) has been applied as a new promoter for the activation of thioglycosides. This proceeds by the reaction of 1 with trifluoromethansulfonic anhydride, which subsequently activates the thioglycoside for glycosidic bond formation. Notably, the reaction proceeds efficiently at room temperature and is adaptable to our reactivity-based one-pot oligosaccharide synthesis. [reaction: see text]     

Multi-Faithful Spanning Trees of Infinite Graphs

For an end and a tree T of a graph G we denote respectively by m() and m _T () the maximum numbers of pairwise disjoint rays of G and T belonging to , and we define tm() := min{m _T(): T is a spanning tree of G}. In this paper we give partial answers — affirmative and negative ones — to the general problem of determining if, for a function f mapping every end of G to a cardinal f() such that tm() f() m(), there exists a spanning tree T of G such that m _T () = f() for every end of G.     

Global existence and decay of solutions for the generalized bad Boussinesq equation

In this paper,we consider the global existence of solutions for the Cauchy problem of the generalized sixth order bad Boussinesq equation.Moreover,we show that the supremum norm of the solution decays algebraically to zero as(1+t)(1/7)when t approaches to infnity,provided the initial data are sufciently small and regular.     

Enantioselective synthesis of cyclic, quaternary oxonitriles

Quaternary oxonitriles are stereoselectively generated from the union of five-, six-, and seven-membered 2-chloroalkenecarbonitriles with chiral alcohols via a Claisen rearrangement. The strategy rests on a new conjugate addition-elimination of allylic alkoxides to 2-chlorocycloalkenecarbonitriles to afford substituted 2-alkoxyalkenenitriles. Subsequent thermolysis unmasks a cyclic oxonitrile while selectively forming a new quaternary center with enantiomeric ratios typically greater than 9:1. The overall alkylation strategy addresses the challenge of enantioselectively generating hindered, quaternary centers while simultaneously installing ketone, nitrile, and olefin functionalities.