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E. Alp M. Borland S. Davey K. Harkay Gabrielle Long Jorg Maser 《Synchrotron Radiation News》2013,26(1):31-34
Twenty years is a long time, but it seems to me as if it were yesterday when the three of us—Michel Belakhovsky, Christian Riekel and I—first scientists of the Experiments Division (except the directors) at the not yet created European Synchrotron Radiation Facility, living in a temporary and not very solid building, made the last corrections to the text of the famous “Red Book,” the ESRF Foundation Phase Report published in February 1987. The floor was shaking in our office when Ruprecht Haensel, the first Director General, walked along the corridor…. We had convened workshops of experts in the various fields to define the first set of beamlines to be built at the ESRF. The program was quite complete, comprising inelastic scattering, imaging (topography), microfocusing, small angle scattering, nuclear resonance, high energy, etc. Costs were particularly difficult to estimate, but finally we were not so far from the real figures. 相似文献
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Summary: Raman spectroscopy was applied to perform a comprehensive morphological analysis of polyethylene (PE) ski base materials at different processing levels. The morphological characterization included determination and evaluation of Raman spectra and examination of the crystallinity values by differential scanning calorimetry (DSC). A good agreement between Raman and DSC crystallinity fractions was obtained, thus corroborating the Raman spectroscopy approach. While for the PE grade with the lowest average molar mass no significant morphological changes due to processing from the raw material via the extruded film to the post-treated film was found, higher molar mass PE grades exhibited a decrease of crystallinity, but an increase of the amorphous fraction along the process chain. 相似文献
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We study the growth morphology of thin macrostructure films which is known to be largely affected by the deposition conditions as thin film nucleation and formation is dependent on the kinetic energy and chemical free energy of the atoms. The ion-beam sputtering technique used for depositing thin layers is due to the advantage over other techniques, e.g. the independent control of many process parameters, such as the pressure and/or the energy of the ion-beam and the substrate temperature. Therefore, the dependence of various sputtering parameters such as: (i) sputtering pressure and/or the rate of deposition and (ii) the effect of substrate temperature on the growth has been studied by depositing a single layer of Al. The variations show some interesting dependencies on the structural parameters for the Al layer deposited which has been understood in terms of thin film growth and nucleation theory. 相似文献
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An examination of solitary waves in 3D, time‐dependant hydrostatic and Boussinesq numerical models is presented. It is shown that waves in these models will deform and that only the acceleration term in the vertical momentum equation need be included to correct the wave propagation. Modelling of solitary waves propagating near the surface of a small to medium body of water, such as a lake, are used to illustrate the results. The results are also compared with experiments performed by other authors. Then as an improvement, an alternative numerical scheme is used which includes only the vertical acceleration term. Effects of horizontal and vertical diffusion on soliton wave structure is also discussed. Copyright © 2003 John Wiley & Sons, Ltd. 相似文献
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Tam NM Ngan VT de Haeck J Bhattacharyya S Le HT Janssens E Lievens P Nguyen MT 《The Journal of chemical physics》2012,136(2):024301
The geometric structures of neutral and cationic Si(n)Li(m)(0/+) clusters with n = 2-11 and m = 1, 2 are investigated using combined experimental and computational methods. The adiabatic ionization energy and vertical ionization energy (VIE) of Si(n)Li(m) clusters are determined using quantum chemical methods (B3LYP/6-311+G(d), G3B3, and CCSD(T)/aug-cc-pVxZ with x = D,T), whereas experimental values are derived from threshold photoionization experiments in the 4.68-6.24 eV range. Among the investigated cluster sizes, only Si(6)Li(2), Si(7)Li, Si(10)Li, and Si(11)Li have ionization thresholds below 6.24 eV and could be measured accurately. The ionization threshold and VIE obtained from the experimental photoionization efficiency curves agree well with the computed values. The growth mechanism of the lithium doped silicon clusters follows some simple rules: (1) neutral singly doped Si(n)Li clusters favor the Li atom addition on an edge or a face of the structure of the corresponding Si(n)(-) anion, while the cationic Si(n)Li(+) binds with one Si atom of the bare Si(n) cluster or adds on one of its edges, and (2) for doubly doped Si(n)Li(2)(0/+) clusters, the neutrals have the shape of the Si(n+1) counterparts with an additional Li atom added on an edge or a face of it, while the cations have both Li atoms added on edges or faces of the Si(n)(-) clusters. 相似文献
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We call a sequence (T
n
) of measure preserving transformations strongly mixing if
tends to P(A)P(B) for arbitrary measurable A, B. We investigate whether one can pass to a suitable subsequence
such that
almost surely for all (or "many") integrable f. 相似文献
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Alan Rigter Jan PM Langeveld Drophatie Timmers-Parohi Jorg G Jacobs Peter LJM Moonen Alex Bossers 《BMC biochemistry》2007,8(1):6