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1.
高端芯片制造所需要的极紫外光刻技术位于我国当前面临35项"卡脖子"关键核心技术之首.高转换效率的极紫外光源是极紫外光刻系统的重要组成部分.本文通过采用双激光脉冲打靶技术实现较强的6.7 nm极紫外光输出.首先,理论计算Gd18+—Gd27+离子最外层4d壳层的4p-4d和4d-4f能级之间跃迁、以及Gd14+—Gd17+离子最外层4f壳层的4d-4f能级之间跃迁对波长为6.7 nm附近极紫外光的贡献.其后开展实验研究,结果表明,随着双脉冲之间延时的逐渐增加,波长为6.7 nm附近的极紫外光辐射强度呈现先减弱、后增加、之后再减弱的变化趋势,在双脉冲延时为100 ns处产生的极紫外光辐射最强.并且,在延时为100 ns处产生的光谱效率最高,相比于单脉冲激光产生的光谱效率提升了33%.此外,发现双激光脉冲打靶技术可以有效地减弱等离子体的自吸收效应,获得的6.7 nm附近极紫外光谱宽度均小于单激光脉冲打靶的情形,且在脉冲延时为30 ns时刻所产生的光谱宽度最窄,约为单独主脉冲产生极紫外光谱宽度的1/3.同时...  相似文献   
2.
Acta Mathematica Sinica, English Series - We are interested in the existence and asymptotic behavior for the least energy solutions of the following fractional eigenvalue problem $$\left({\rm{P}}...  相似文献   
3.
As one of the most attractive non-radiative power transfer mechanisms without cables,efficient magnetic resonance wireless power transfer(WPT)in the near field has been extensively developed in recent years,and promoted a variety of practical applications,such as mobile phones,medical implant devices and electric vehicles.However,the physical mechanism behind some key limitations of the resonance WPT,such as frequency splitting and size-dependent efficiency,is not very clear under the widely used circuit model.Here,we review the recently developed efficient and stable resonance WPT based on non-Hermitian physics,which starts from a completely different avenue(utilizing loss and gain)to introduce novel functionalities to the resonance WPT.From the perspective of non-Hermitian photonics,the coherent and incoherent effects compete and coexist in the WPT system,and the weak stable of energy transfer mainly comes from the broken phase associated with the phase transition of parity-time symmetry.Based on this basic physical framework,some optimization schemes are proposed,including using nonlinear effect,using bound states in the continuum,or resorting to the system with high-order parity-time symmetry.Moreover,the combination of non-Hermitian physics and topological photonics in multi-coil system also provides a versatile platform for long-range robust WPT with topological protection.Therefore,the non-Hermitian physics can not only exactly predict the main results of current WPT systems,but also provide new ways to solve the difficulties of previous designs.  相似文献   
4.
量子通信是当前量子信息领域的研究前沿和热点。增益开关半导体激光产生技术是一种实现脉冲激光产生的成熟方法,将其与注入锁定技术结合,可以满足量子通信应用对激光脉冲的需求。系统地介绍了增益开关半导体激光器的工作原理和注入锁定方案,以及其在量子密钥分发、量子随机数产生等方面的应用现状,着重从物理原理、实验方案和最新研究进展等方面进行阐述,并对其下一步的发展进行简要展望。  相似文献   
5.
Journal of Optimization Theory and Applications - This paper considers an optimal control problem governed by nonlinear fractional-order systems with multiple time-varying delays and subject to...  相似文献   
6.
In this paper, the problem of the uniform stability for a class of fuzzy fractional-order genetic regulatory networks with random discrete delays, distributed delays, and parameter uncertainties is studied. Although there is a portion of literature on using fixed point theorems to study the stability of fractional neural networks, most of them required the fractional order to be in 1 2 , 1 . However, the case of the fractional-order belonging to ( 0 , 1 2 ) has not been discussed. To solve it, this work proposes a novel idea of using fixed point theory to study the stability of fuzzy (0,1) order neural networks, the problem of the uniqueness of the solution of the considered genetic regulatory networks is resolved, and a novel sufficient condition to guarantee the uniform stability of above genetic regulatory networks is also derived. Eventually, an example is given to demonstrate that the obtained result is effective.  相似文献   
7.
涡激振动是造成海洋立管疲劳损伤的重要因素, 抑制振动能够保障结构安全, 延长使用寿命. 多数涡激振动抑制方法基于干扰流场的方式, 但在复杂环境条件下, 仅通过干扰流场对振动的抑制效果有限. 因此, 从结构层面考虑开展了海洋立管涡激振动抑制研究. 基于能量传递的理论, 阐述了立管涡激振动过程中的能量传递规律. 振动能量以行波形式由能量输入区传播至能量耗散区, 主要在能量耗散区被消耗. 通过局部增大能量耗散区的阻尼, 增加振动能量在传播过程中的消耗, 实现涡激振动抑制. 为了求解立管涡激振动响应, 构建了尾流振子预报模型, 并根据实验结果验证了理论模型的可靠性. 基于理论计算得到的能量系数, 判定立管涡激振动的能量输入区和能量耗散区. 通过对比立管增大阻尼前后的响应, 分析了涡激振动抑制效果. 研究结果表明: 在能量输入区增大阻尼对涡激振动的抑制效果并不显著; 在能量耗散区增大阻尼使能量衰减系数达到临界值之后, 能够显著降低立管上部和底部的涡激振动位移; 当能量衰减系数超过临界值后, 继续增大耗散区阻尼对涡激振动抑制效果的提升不明显.   相似文献   
8.
Journal of Theoretical Probability - We present new criteria for geometric and algebraic transience for discrete-time transient Markov chains on general state spaces, based on the moment of the...  相似文献   
9.
Three-dimensional(3D)vertical architecture transistors represent an important technological pursuit,which have distinct advantages in device integration density,operation speed,and power consumption.However,the fabrication processes of such 3D devices are complex,especially in the interconnection of electrodes.In this paper,we present a novel method which combines suspended electrodes and focused ion beam(FIB)technology to greatly simplify the electrodes interconnection in 3D devices.Based on this method,we fabricate 3D vertical core-double shell structure transistors with ZnO channel and Al2O3 gate-oxide both grown by atomic layer deposition.Suspended top electrodes of vertical architecture could be directly connected to planar electrodes by FIB deposited Pt nanowires,which avoid cumbersome steps in the traditional 3D structure fabrication technology.Both single pillar and arrays devices show well behaved transfer characteristics with an Ion/Ioff current ratio greater than 106 and a low threshold voltage around 0 V.The ON-current of the 2×2 pillars vertical channel transistor was 1.2μA at the gate voltage of 3 V and drain voltage of 2 V,which can be also improved by increasing the number of pillars.Our method for fabricating vertical architecture transistors can be promising for device applications with high integration density and low power consumption.  相似文献   
10.
Shortening the distance between the depletion region and the electrodes to reduce the trapped probability of carriers is a useful approach for improving the performance of heterojunction.The CdS/Si nanofilm heterojunctions are fabricated by using the radio frequency magnetron sputtering method to deposit the amorphous silicon nanofilms and Cd S nanofilms on the ITO glass in turn.The relation of current density to applied voltage(I-V)shows the obvious rectification effect.From the analysis of the double logarithm I-V curve it follows that below~2.73 V the electron behaviors obey the Ohmic mechanism and above~2.73 V the electron behaviors conform to the space charge limited current(SCLC)mechanism.In the SCLC region part of the traps between the Fermi level and conduction band are occupied,and with the increase of voltage most of the traps are occupied.It is believed that Cd S/Si nanofilm heterojunction is a potential candidate in the field of nano electronic and optoelectronic devices by optimizing its fabricating procedure.  相似文献   
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