Nonvolatile bipolar resistance switching effects in multiferroic BiFeO3 thin films on LaNiO3-electrodized Si substrates

We report on reversible bipolar resistance switching effects in multiferroic BiFeO₃ thin films without electroforming. The BiFeO₃ thin films with (110) preferential orientation were prepared on LaNiO₃-electrodized Si substrates with a Pt/BiFeO₃/LaNiO₃ device configuration. The resistance ratio of high resistance state (HRS) to low resistance state (LRS) of the devices was as high as three orders of magnitude. The dominant conduction mechanisms of LRS and HRS were dominated by ohmic behavior and trap-controlled space charge limited current, respectively. The resistance switching mechanism of the devices was discussed using a modified Schottky-like barrier model taking into account the movement of oxygen vacancies.     

Half-metallicity in Fe-based Heusler alloys Fe2TiZ (Z = Ga,Ge, As,In, Sn and Sb)

The electronic structure and magnetic properties of new Fe-based Heusler alloys Fe₂TiZ (Z = Ga, Ge, As, In, Sn and Sb) have been studied by first-principles calculations. In these alloys, the 24-electron Fe₂TiGe, Fe₂TiSn are nonmagnetic semiconductors and other compounds are all ferrimagnetic metals. Fe₂TiAs and Fe₂TiSb are predicted to be half-metals with 100% spin polarization. The spin polarization ratio in Fe₂TiGa and Fe₂TiIn is also quite high. The calculated total moment for Fe₂TiAs and Fe₂TiSb is 1 μ_B, which is mainly determined by the Fe partial moment. The half-metallicity of Fe₂TiSb is stable under lattice distortion. The spin polarization of Fe₂TiSb is found to be 100% for the lattice variation in a range of 5.6–6.1 Å, which is attractive in practical applications.     

Characterization of preferential orientation of martensitic variants in a single crystal of NiMnGa

We report the detailed observation of martensitic variants in NiMnGa single crystals. The variants that are twinned with each other in different ways can be clearly identified in our single crystals by optical observation. We also investigated the preferential orientation of the martensitic variants in NiMnGa single crystals. We observed the motion of the variant boundary in response to application of a magnetic field. This observation can be used to explain phenomenologically the magnetic-field-induced strain. In the single crystal with composition Ni₅₂Mn₂₄Ga₂₄, martensite with seven modulated layers (7M) shows preferentially oriented variants. A completely recoverable two-way shape-memory behavior was also observed by measuring the free sample in three different directions during a complete temperature cycle. It was found that the largest strains in the [001] and [010] directions occur in different temperature ranges.     

On dispersion and Markov constants

We proved some results on the dispersion of the real quadratic irrational numbers, and use LEO 386/25 to compute some numerical results for discriminant <200 (see the attached Table A).The project was supported by a grant from NNSF of P.R. China.     

Effect of low-valent atom substitution on electronic structure and magnetic properties of Fe1.5M0.5CoSi (M=V, Cr, Mn, Fe) Heusler alloys

Quaternary Heusler alloys Fe_1.5M_0.5CoSi with M=V, Cr, Mn and Fe have been investigated theoretically and experimentally. All of these samples crystallize in the ordered Heusler-type structure. The calculated electronic structure shows a pseudogap around E_F in the minority spin states of Fe₂CoSi. With the substitution of low-valent atoms for Fe, the majority antibonding peak is shifted to higher energy and a minority gap around the Fermi level is opened. High spin polarization ratio is obtained in Fe_1.5M_0.5CoSi (M=V, Cr, Mn) alloys. The calculated total spin moments decrease with decreasing number of valence electrons and follow the Slater-Pauling curve, which agree with the experimental results well. The Curie temperature decreases as M atom varies from Fe to V, but is always higher than 650 K, which is suitable for technical applications.     

Colossal resistive switching behavior and its physical mechanism of Pt/<Emphasis Type="Italic">p</Emphasis>-NiO/<Emphasis Type="Italic">n</Emphasis>-Mg<Subscript>0.6</Subscript>Zn<Subscript>0.4</Subscript>O/Pt thin films

A heterojunction structure of p-NiO/n-Mg_0.6Zn_0.4O with an aim to tuning or improving the resistive switching properties was fabricated on Pt/TiO₂/SiO₂/Si substrates by the sol-gel spin-coating technique. The Pt/NiO/Mg_0.6Zn_0.4O/Pt heterojunction thin-film device shows excellent resistive switching properties, such as a reduced threshold current of 1 μA for device initiation, a small dispersion of reset voltage ranging from 0.54 to 0.62 V, long retention time and a high resistance ratio of high-resistance state to low-resistance state about six orders of magnitude. These results indicate that the resistive switching properties can be greatly improved by constructing the p-NiO/n-Mg_0.6Zn_0.4O heterojunction for nonvolatile memory applications. The physical mechanism responsible for colossal resistive switching properties of the heterojunction was analyzed based on interfacial defect effect and formation and rapture of conductive filaments.     

Magnetic properties of Fe0.95Pd0.05 nanowire arrays

Fe_0.95Pd_0.05 nanowires were fabricated by the electrodeposition in porous anodic aluminum oxide templates and post-annealed at 300–700 °C. Transmission electron microscopy observations demonstrated the isolated nanowires to have polycrystalline structure. Magnetic measurements, however, showed improvement of both coercivity and squareness with the addition of 5 at% Pd in the Fe nanowires as well as proper annealing temperatures of about 500 °C.     

Origin of the Z−28 rule in Mn2Cu-based Heusler alloys: A comparing study

The origin of the Slater–Pauling curve M_t=Z_t−28 (Here M_t is the total spin moment and Z_t is the number of valence electrons) in half-metallic Heusler alloys Mn₂CuZ (Z=Ge and Sb) has been studied in detail. In Mn₂CuZ the half-metallic gap has a similar origin like half-Heusler alloys. The Cu atom acts as an electron “donator” in Mn₂CuZ, which contributes five d-electrons to the minority spin band of Mn₂CuZ. So there are 14 valence electrons in the minority band of Mn₂CuZ below the Fermi level. This is the origin of the S–P curve M_t=Z_t–28. Finally, it is found that, by partial doping of Cu to the vacant site of half-metallic half-Heusler alloys, the magnetic moments of these can be tuned without destroying the half-metallicity. This can be a possible way to design new half-metals.