A floating-point genetic algorithm for solving the unit commitment problem

This paper proposes a floating-point genetic algorithm (FPGA) to solve the unit commitment problem (UCP). Based on the characteristics of typical load demand, a floating-point chromosome representation and an encoding–decoding scheme are designed to reduce the complexities in handling the minimum up/down time limits. Strategic parameters of the FPGA are characterized in detail, i.e., the evaluation function and its constraints, population size, operation styles of selection, crossover operation and probability, mutation operation and probability. A dynamic combination scheme of genetic operators is formulated to explore and exploit the FPGA in the non-convex solution space and multimodal objective function. Experiment results show that the FPGA is a more effective technique among the various styles of genetic algorithms, which can be applied to the practical scheduling tasks in utility power systems.     

Polynomial decay rate for the dissipative wave equation

Using Fourier integral operators with special amplitude functions, we analyze the stabilization of the wave equation in a three-dimensional bounded domain on which exists a trapped ray bouncing up and down infinitely between two parallel parts of the boundary.     

Infrared spectroscopic analyses of transformations of chemical species on the silica highly-reacted with gaseous BF3.

Transformations of chemical species formed by the reaction of gaseous BF3 with high pressure and silica preheated at 473 and 1093 K were studied with the use of infrared absorption spectrometry. The species containing -BF2 and the species containing >BF were transformed to each other on the highly-reacted silica depending on the pressure of BF3 in cell, and some of the species containing -BF2 were also desorbed without their transformations to the species containing >BF. H2O played important roles in these transformations.     

Fabrication of Micro -Optical Devices by a Femtosecond Laser

Femtosecond laser is a perfect laser source for materials processing when high accuracy and small structure size are required. Due to the ultra short interaction time and the high peak power, the process is generally characterized by the absence of heat diffusion and, consequently molten layers. Various induced structures have been observed in materials after the femtosecond laser irradiation. Here, we report on fabrication of micro-optical devices by the femtosecond laser. 1) formation of optical waveguide with internal loss less than 0.5dB/cm in the wavelength region from 1.2 to 1.6 mm, by translating a silica glass perpendicular to the axis of the focused femtosecond laser beam; 2) nano-scale valence state manipulation of active ions inside transparent materials; 3) space-selective precipitation and control of metal nanoparticles inside transparent materials; The mechanisms and applications of the femtosecond laser induced phenomena were also discussed.     

Effect of Ultrashort Pulsed Laser and X-Ray Irradiation on Au+ -Doped Glass

Au nanoparticles were precipitated inside Au+-doped glass samples after irradiation by femtosecond laser or x-ray. Femtosecond laser and X-ray irradiation result in decreasing of anneal temperature and critical size for the precipitation of Au nanoparticles.     

Hg1-xCdxTe/Cd1-zZnzTe的X射线反射率及半峰全宽的动力学研究

X射线衍射摇摆曲线的计算机模拟是一种获得材料晶体质量参量的有效方法，其中材料本征摇摆曲线的计算是计算机模拟的基础。用X射线动力学理论计算了Hg1-xCdxTe和Cd1-zZnzTe本征反射率曲线，并研究了组分、膜厚分别对本征反射率和半峰全宽的影响。结果表明Hg1-xCdxTe和Cd1-zZnzTe的本征反射率和半峰全宽与材料组分和厚度有明显的依赖关系，且该依赖关系取决于X射线在材料中的散射和吸收的相对强弱。薄膜的厚度也是直接影响本征摇摆曲线峰形、半峰全宽和反射率的重要因素，当薄膜厚度小于穿透深度时，表征本征反射率曲线的各个参量均与薄膜厚度有直接的关系。对于(333)衍射面，碲镉汞材料厚度大于7μm后，本征反射率和半峰全宽将不再发生明显变化。     

Study on effects of substrate temperature on growth and structure of alignment carbon nanotubes in plasma-enhanced hot filament chemical vapor deposition system

Alignment carbon nanotubes (ACNTs) were synthesized on silicon substrate coated with Ni catalyst film and Ta buffer layer by plasma-enhanced hot filament chemical vapor deposition using CH₄, NH₃, and H₂ as the reaction gas, and they were investigated by scanning electron microscopy and transmission electron microscopy. It is found that the diameter of the bamboo-structured ACNTs is increased from 62 to 177 nm when the substrate temperature was changed from 626 to 756 °C. Their growth rate is enhanced by the substrate temperature in a range of 626-683 °C and it is reversely reduced with the substrate temperature after the substrate temperature is over 683 °C. Beginning with wetting phenomenon, the effects of the substrate temperature on the structure and growth rate of the ACNTs are analyzed.