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1.
Yang  Chao  Ren  Han  Wei  Er-ling 《应用数学学报(英文版)》2022,38(3):719-728
Acta Mathematicae Applicatae Sinica, English Series - A subset I of vertices of an undirected connected graph G is a nonseparating independent set (NSIS) if no two vertices of I are adjacent and G...  相似文献   
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Physics of the Solid State - The discovery of extreme magnetoresistance (MR) in nonmagnetic materials attracted attention to WTe2 semimetal. We studied MR in a single crystal of tungsten...  相似文献   
4.
Catalysis Surveys from Asia - Co3O4 catalyst derived from Co-MOFs demonstrated rich active sites in the catalytic reaction. In this paper, we prepared the rod-like Co3O4 catalysts by calcining...  相似文献   
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In this paper, the authors discuss a generalization of Lappan’s theorem to higher dimensional complex projective space and get the following result: Let f be a holomorphic mapping of ? into Pn(C), and let H1, · · · , Hq be hyperplanes in general position in Pn(C).Assume that sup {(1 ? |z|2)f?(z) : z ∈ q[ j=1 f?1(Hj )o < ∞,if q ≥ 2n2 + 3, then f is normal.  相似文献   
6.
Considering the effect of stochasticity including white noise and colored noise, this paper aims to study a hybrid stochastic cholera epidemic model with waning vaccine-induced immunity and nonlinear telegraph perturbations. First, we derive a critical value ? 0 C related to the basic reproduction number ? 0 of the deterministic model. The key aim of this paper is to generalize the θ-stochastic criterion method proposed by the recent work (Han et al. in Chaos Solit Fract 140:110238, 2020) to eliminate nonlinear telegraph perturbations. Next, via constructing several θ-stochastic Lyapunov functions and using the generalized method, we further prove that the stochastic model have a unique ergodic stationary distribution under ? 0 C > 1. Results show that the prevention and control of cholera epidemic depend on low transmission rate and small telegraph perturbations. Finally, the corresponding numerical simulations are performed to illustrate our analytical results and a practical application on the Somalia cholera outbreak is shown at the end of this paper.  相似文献   
7.
Given a graph sequence denote by T3(Gn) the number of monochromatic triangles in a uniformly random coloring of the vertices of Gn with colors. In this paper we prove a central limit theorem (CLT) for T3(Gn) with explicit error rates, using a quantitative version of the martingale CLT. We then relate this error term to the well-known fourth-moment phenomenon, which, interestingly, holds only when the number of colors satisfies . We also show that the convergence of the fourth moment is necessary to obtain a Gaussian limit for any , which, together with the above result, implies that the fourth-moment condition characterizes the limiting normal distribution of T3(Gn), whenever . Finally, to illustrate the promise of our approach, we include an alternative proof of the CLT for the number of monochromatic edges, which provides quantitative rates for the results obtained in [7].  相似文献   
8.
Shortening the distance between the depletion region and the electrodes to reduce the trapped probability of carriers is a useful approach for improving the performance of heterojunction.The CdS/Si nanofilm heterojunctions are fabricated by using the radio frequency magnetron sputtering method to deposit the amorphous silicon nanofilms and Cd S nanofilms on the ITO glass in turn.The relation of current density to applied voltage(I-V)shows the obvious rectification effect.From the analysis of the double logarithm I-V curve it follows that below~2.73 V the electron behaviors obey the Ohmic mechanism and above~2.73 V the electron behaviors conform to the space charge limited current(SCLC)mechanism.In the SCLC region part of the traps between the Fermi level and conduction band are occupied,and with the increase of voltage most of the traps are occupied.It is believed that Cd S/Si nanofilm heterojunction is a potential candidate in the field of nano electronic and optoelectronic devices by optimizing its fabricating procedure.  相似文献   
9.
低维硅锗材料是制备纳米电子器件的重要候选材料,是研发高效率、低能耗和超高速新一代纳米电子器件的基础材料之一,有着潜在的应用价值。采用密度泛函紧束缚方法分别对厚度相同、宽度在0.272 nm~0.554 nm之间的硅纳米线和宽度在0.283 nm~0.567 nm之间的锗纳米线的原子排布和电荷分布进行了计算研究。硅、锗纳米线宽度的改变使原子排布,纳米线的原子间键长和键角发生明显改变。纳米线表层结构的改变对各层内的电荷分布产生重要影响。纳米线中各原子的电荷转移量与该原子在表层内的位置相关。纳米线的尺寸和表层内原子排列结构对体系的稳定性产生重要影响。  相似文献   
10.
Chang  Shuenn-Yih 《Nonlinear dynamics》2022,107(3):2539-2562
Nonlinear Dynamics - A novel type of linear multi-step formulas is proposed for solving initial value problems, such as the problems of multi-body systems and vibration systems and a variety of...  相似文献   
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