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The Distinguished Charge-Trapping Capability of the Memory Device with Al2O3-Cu2O Composite as the Charge Storage Layer 下载免费PDF全文
A memory device Si/Al2O3/Al2O3-Cu2O/Al2O3/Pt is fabricated by using atomic layer deposition and r~magnetron sputtering techniques. The memory device including the composite of Al2O3 and Cu2O as the charge storage layer shows a distinguished charge trapping capability. At a working voltage of ±11 V a memory window of 9.22 V is obtained. The x-ray photoelectron spectroscopic study shows a shoulder from Cu2+ ions around the peak of Cu1+ ions. It is suggested that the charge-trapping mechanism should be attributed to the defect states formed by the inter-diffusion at the interface of two oxides. 相似文献
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我国居民储蓄函数模型的建立与分析 总被引:6,自引:0,他引:6
本文通过建立和分析储蓄函数,对1952年—2001年的我国居民储蓄进行了实证研究,力求在大样本、计量经济建模的完整性两个方面体现出新意,并且探讨了几个易被忽视的问题的实用解决方法。本文研究表明,我国居民的储蓄行为在不同的历史阶段有明显的区别,随着社会经济的发展储蓄行为的无规律性会越来越严重,收入以外的其他影响储蓄的因素主要存在一年和二年的滞后作用。 相似文献
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