Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation

The hardening of the buried oxide （BOX） layer of separation by implanted oxygen （SIMOX） silicon-on-insulator （SOI） wafers against total-dose irradiation was investigated by implanting ions into the BOX layers. The tolerance to total-dose irradiation of the BOX layers was characterized by the comparison of the transfer characteristics of SOI NMOS transistors before and after irradiation to a total dose of 2.7 Mrad（SiO2）. The experimental results show that the implantation of silicon ions into the BOX layer can improve the tolerance of the BOX layers to total-dose irradiation. The investigation of the mechanism of the improvement suggests that the deep electron traps introduced by silicon implantation play an important role in the remarkable improvement in radiation hardness of SIMOX SOI wafers.     

基于分层贝叶斯时空模型的雾霾天气过程计数分析

本文以北京市8个行政区(东城区、西城区、石景山区、海淀区、朝阳区、昌平区、顺义区、怀柔区)的PM2.5指数计算各区逐月雾霞天气过程计数频数为研究对象,选择考虑包括地表温度、相对湿度、平均风速、SO_2质量浓度和NO_2质量浓度在内的5个影响因素。本文定义雾霾天气过程,构建分层贝叶斯时空模型,在一个统计模型中对诸多影响因素进行分析,并从计数分析的角度对北京市雾霾天气现象的时空分布、影响因素进行深入讨论。通过分析得出,温度、湿度、污染物浓度对于雾霾天气过程发生具有促进作用,平均风速对于雾霾天气过程发生具有抑制作用。从时空角度分析,从时间维度上看雾霾天气过程的发生具有明显的季节性特征,冬季(1月、2月)以及3月雾霾天气过程发生次数最高,春季(4月、5月)发生次数最低,秋季发生次数略高于夏季。从空间维度上来看,中心城区(东城区、西城区、石景山、海淀区、朝阳区)雾霾天气过程发生次数明显高于郊区(顺义、昌平、怀柔),以东城区、西城区和朝阳区最为严重。