新概念下的Sn掺杂(La1-xSrx)2Cu1-xSnxO4超导体的M(o)ssbauer谱研究

对新概念指导下而设计的(La1-xSrx)2Cu1-xSnxO4超导体进行了119SnM(o)ssbauer谱研究.对不同掺杂量样品的系统研究表明,M(o)ssbauer谱实验结果进一步证实了Sn以Sn4+价态存在并占据Cu晶位,不存在占据La晶位的Sn2+离子. Sn4+离子附近的局域晶格畸变较小,但是随Sn掺杂量有增加趋势.在对La2CuO4母体进行Sr和Sn同时掺杂所引入的载流子对超导电性的影响存在新的机制.在新的额外氧机制下,讨论了Sn掺杂所导致的额外氧对超导电性的影响.     

Survey of plasmonic gaps tuned at sub-nanometer scale in self-assembled arrays

Frontiers of Physics - Recent progress in the observation of surface-enhanced Raman scattering (SERS) is reviewed to examine the possibility of finding a novel route for the effective...     

用XRD和ACS测量研究Y_(1-x)Eu_xBa_2Cu_3O_(7-δ)超导体的应力钉扎机制

利用X射线衍射 (XRD)和交流磁化率 (ACχ)方法系统地研究了Y1-xEuxBa2 Cu3O7-δ(x=0 .0～ 1.0 )超导体 ,研究发现Eu掺杂替代了Y晶位后引起了晶格失配 .这种晶格失配与电流密度有密切的联系 .对于不同掺杂成分样品 ,X射线衍射线形分析表明 ( 0 0 6)及 ( 0 0 7)衍射峰型随掺杂量变化 ,掺杂浓度在 30 %和 70 %附近时 ,半高宽 (FWHM)出现极大值 ,表明此时样品的晶格失配最大 .与此相对应 ,电流密度Js 也在此掺杂浓度范围内达到极大值 .我们在晶格失配应力场的钉扎模型下对实验现象进行了讨论 ,认为Y1-xEuxBa2 Cu3O7-δ超导体中由元素替代引起的晶格失配应力场是有效的钉扎中心 .     

Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst

Graphene on gallium nitride(GaN) will be quite useful when the graphene is used as transparent electrodes to improve the performance of gallium nitride devices. In this work, we report the direct synthesis of graphene on GaN without an extra catalyst by chemical vapor deposition. Raman spectra indicate that the graphene films are uniform and about 5–6 layers in thickness. Meanwhile, the effects of growth temperatures on the growth of graphene films are systematically studied, of which 950℃ is found to be the optimum growth temperature. The sheet resistance of the grown graphene is 41.1Ω/square,which is close to the lowest sheet resistance of transferred graphene reported. The mechanism of graphene growth on GaN is proposed and discussed in detail. XRD spectra and photoluminescence spectra indicate that the quality of GaN epi-layers will not be affected after the growth of graphene.     

Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE

Thick GaN films of high quality are directly grown on wet-etching patterned sapphire in a vertical hydride vapour phase epitaxy reactor. The optical and structural properties of GaN films are studied using scanning electronic microscopy and cathodoluminescence. Test results show that initial growth of hydride vapour phase epitaxy GaN occurs not only on the mesas but also on the two asymmetric sidewalls of the V-shaped grooves without selectivity. After the two-step coalescence near the interface, the GaN films near the surface keep on growing along the direction perpendicular to the long sidewall. Based on Raman results, GaN of the coalescence region in the grooves has the maximum residual stress and poor crystalline quality over the whole GaN film, and the coalescence process can release the stress. Therefore, stress-free thick GaN films are prepared with smooth and crack-free surfaces by this particular growth mode on wet-etching patterned sapphire substrates.     

用XRD和ACS测量研究Y1-xEuxBa2Cu3O7-δ超导体的应力钉扎机制

利用X射线衍射（XRD）和交流磁化率（ACχ）方法系统地研究了Y1x-EuxBa2Cu3O7-δ（x=0.0-1.0）超导体,研究发现Eu 掺杂替代了Y晶位后引起晶格失想与电流密度有密切的联系,对于不同掺杂成分样品,X射线衍射线分析表明（006）及（007）衍射峰型随掺杂量变化,杂浓度在30％和70％附近时,半高宽（FWHM)再现极大值,表明此时样品的晶格失配最大,与此相对应,电流密度Js也在此掺杂浓度范围内达到极大值,我们在晶格失配应力场的钉钆模型下对实现现象进行了讨论,认为Y1-xEuxBa2Cu3O7-δ超导体中由元素替代引起的晶格失配应力场是有效的钉扎中心。