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A three-dimensional(3D)silicon-carbide(SiC)trench metal-oxide-semiconductor field-effect transistor(MOSFET)with a heterojunction diode(HJD-TMOS)is proposed and studied in this work.The SiC MOSFET is characterized by an HJD which is partially embedded on one side of the gate.When the device is in the turn-on state,the body parasitic diode can be effectively controlled by the embedded HJD,the switching loss thus decreases for the device.Moreover,a highly-doped P+layer is encircled the gate oxide on the same side as the HJD and under the gate oxide,which is used to lighten the electric field concentration and improve the reliability of gate oxide layer.Physical mechanism for the HJD-TMOS is analyzed.Comparing with the conventional device with the same level of on-resistance,the breakdown voltage of the HJD-TMOS is improved by 23.4%,and the miller charge and the switching loss decrease by 43.2%and 48.6%,respectively. 相似文献
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本文运用半群理论和Kato的方法,研究了MHD方程组在PL~n∩PL~p(1
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The authors consider the Cauchy problem for the following nonlinear wave equationswhere x ∈ R3, t ≥ 0, ε > 0 is a small parameter, and obtain the sharp bounds for the lifespan of solution to (0.1). Specially, it is proved that there exist two constants C1 and C2, which are independent of ε, then the lifespan T(ε) satisfies the folowing inequalities 相似文献
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该文研究带耗散项的线性和半线性波动方程外问题. 首先利用一个Sobolev型不等式得到了线性耗散波动方程在外区域上的整体能量衰减估计, 此结果用来证明非线性项为|u|p (2
+) 的半线性波动方程解的整体存在性. 为此, 该文主要研究N维(3≤ N≤7)外区域上球对称解的情形. 相似文献
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随着信息技术和网络技术的发展,基于移动互联网的教学改革也得到迅速发展.文章利用移动互联网技术实现了一种课堂在线签到新方法,该方法有机结合课堂练习与在线签到,不仅提高了课堂到课率,调动了学生的学习积极性,而且还可以为大学课程的过程性评价提供依据.通过在大学一年级离散数学课堂教学中的应用实践,表明该方法具有很好的实用价值和推广价值. 相似文献
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利用Littlewood-Paley 理论和输运方程解的先验估计, 在Besov 空间
中证明了一类弱耗散Camassa-Holm 方程Cauchy 问题解的局部适定性, 同时给出了解的能量估计及爆破准则. 相似文献
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