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We have studied the interracial reactions between amorphous LaAlO3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interracial layer between LaAlO3 film and Si substrate chemical states show that the ratio of La 4d3/2 to Al 2p is SiLaxAlyOz. The depth distributions of La, Si and Al of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content, in the interracial layer gradually decreases with increasing thickness of the interracial layer. These results strongly suggest that the Al element is not deficient in the interracial layer, as previously believed, and the formation of a SiLaxAlyOz interracial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interracial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-k oxides as gate dielectrics. 相似文献
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Pico-second photoelectric characteristic in manganite oxide La0.67Ca0.33MnO3 films 总被引:1,自引:0,他引:1 下载免费PDF全文
Ultrafast photoelectric characteristic has been observed in La0.67Ca0.33MnO3 films on tilted SrTiO3 substrates. A pico-second (ps) open-circuit photovoltage of the perovskite manganese oxide films has been obtained when the films were irradiated by a 1.064μm laser pulse of 25 ps duration. The rise time and full width at half-maximum of the photovoltage pulse are ~300 ps and ~700 ps, respectively. The photovoltaic sensitivity was as large as ~500 mV/mJ. 相似文献
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采用脉冲激光沉积(PLD)技术在MgO基片上制备了金属Fe薄膜.利用原子力显微镜研究了不同制备温度对薄膜表面形貌的影响.x射线衍射分析表明沉积温度大于500℃时,Fe薄膜在MgO基片上有很好的结晶性,并有单一取向.通过z扫描方法测量了超薄Fe膜的光学非线性,得到了Fe薄膜的非线性折射率n2=709×10-5cm2/ kW,非线性吸收系数 β=-552×10-3cm/W.
关键词:
Fe薄膜
非线性
脉冲激光沉积 相似文献
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报道了利用蓝宝石介质谐振器技术测量MgB2超导薄膜的微波表面电阻Rs、OK时的穿透深度λ(O)和超导能隙△(O).λ(O)和△(O)的值是通过先测量样品穿透深度λ(T)的变化量△λ(T),然后由BCS理论模型拟合△λ(T)的实验数据得到的.测试样品是利用化学气相沉积技术在MgO(111)基片上制备的c轴织构的MgB2超导薄膜,薄膜的超导转变温度和转变宽度分别为38K和0.1K.微波测试结果表明在10K,18GHz下MgB2薄膜的Rs约为100μΩ,可以和高质量的YBCO薄膜的Rs值相比拟;BCS理论拟合得到的MgB2超导薄膜的λ(0)=102nm,△(0):1.13kTc. 相似文献
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Highly c-axis oriented MgB2 thin films with Tc^onset of 39.6K were fabricated by magnesium diffusing into pulsedlaser-deposited boron precursors.The estimation of critical current density Jc,using hysteresis loops and the Bean model,has given the value of 10^7A/cm^2(15K,0T),which is one of the highest values ever reported.The x-ray photoemission study of the MgB2 thin films has revealed that the binding energies of Mg 2p and B 1s are at 49.4eV and 186.9eV,which are close to those of metallic Mg and transition-metal diborides,respectively. 相似文献
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Effect of oxygen vacancy on transport property of perovskite microstructures is studied theoretically. Compared with calculated and measured I-V curves, it is revealed that electron conduction plays an important role in the oxygen nonstoichiometry perovskite heterostructures even with hole-doped or un-doped material due to the oxygen vacancies. In addition, a detailed understanding of the influence of oxygen vacancy concentration and temperature on the conduction characteristics of oxide heterojunction with both forward and reverse biases is obtained by calculation. 相似文献
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Acceptor Concentration Effects on Photovoltaic Response in the La1-xSrxMnO3/SrNbyTi1-yO3 Heterojunction 下载免费PDF全文
Photovoltaic response in the heterojunction of La1-x SrxMnO3/SrNby Ti1-yO3 (LSMO/SNTO) is analyzed theoretically based on the drift-diffusion model. It is found that the decrease of acceptor concentration in the La1-xSrxMnO3 layer of hereto junction can increase the peak value of photovoltaic signal and the speed of photovoltaic response, whereas the changing of donor concentration in the SrNby Ti1-yO3 layer has no such evident effect. Furthermore, the result also indicates that the modulation of Sr doping in La1-xSrxMnO3 is an effective method to accommodate the sensitivity and the speed of photovoltaic response for LSMO/SNTO photoelectric devices. 相似文献