求解全局最优问题的多重点样本水平值估计的相对熵算法

研究有界闭箱约束下的全局最优化问题,利用相对熵及广义方差函数方程的最大根与全局最小值之间的等价关系,设计求解全局最优值的积分型水平值估计算法.对采用重点样本采样技巧产生的函数值按一定规则进行聚类,从而在各聚类中产生的若干新重点样本,结合相对熵算法,构造出多重点样本进行全局搜索的新算法.该算法的优点在于每次迭代选用当前较好的函数值信息,以达到随机搜索到更好的函数值信息.同时多重点样本可有利挖掘出更好的全局信息.一系列的数值实验表明该算法是非常有效的.     

红外飞秒激光诱导Ce3+掺杂闪烁晶体的上转换发光研究

本文研究了红外飞秒激光照射下Ce3+ 掺杂的YAP和LSO两种闪烁晶体的上转换发光现象.实验发现在飞秒激光泵浦下,这两种晶体的荧光均来自于Ce3+离子的5d-4f跃迁.荧光强度与泵浦光功率之间的依赖关系揭示了Ce3+:YAP和Ce3+:LSO晶体的上转换过程皆由三光子吸收过程所主导.分析表明,Ce3+:YAP和Ce3+:LSO晶体中的三光子吸收是三光子同时吸收.     

易拉罐形状和尺寸的最优设计

从用料最省的角度研究了易拉罐的形状和尺寸的优化设计问题,首先通过多次测量取平均值的方法得到了题目所需的数据．然后就问题二和问题三分别建立了优化模型,并借助数学软件进行了求解,得到了最优设计的尺寸．最后设计出了椭球形状的易拉罐作为自己的最优设计．     

化学发光免疫分析方法与应用进展

化学发光免疫分析方法具有选择性好、灵敏度高、分析速度快、设备简单等特点,在环境、临床、食品、药物检测等领域得到了广泛应用。在实际应用中,常常需要对大量复杂样品或低丰度分析物样品进行测定。而经典商品化的免疫分析方法所需时间长、样品消耗多、成本高,不能满足上述要求。因而建立快速、高通量、高灵敏和低成本的免疫检测方法已成为化学发光免疫分析方法的研究热点和发展趋势。本文简要总结近5年来化学发光免疫分析方法的研究进展及其应用,并展望其发展方向。     

Nd^3＋ Doped Silicate Glass Photonic Crystal Fibres

We report on the fabrication of two kinds of large core arca Nd^3 doped sillcate glass photonic crystal fibres and demonstration of the fibre waveguiding properties the measured minimum loss of one kind of fibres is 2。5db/m at 660 nm.The fibres sustain only a single mode at least over the wavelength range from 660nm to 980 nm.     

Physical analysis of normally-off ALD Al2O3/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique

Based on the self-terminating thermal oxidation-assisted wet etching technique, two kinds of enhancement mode Al$_{2}$O$_{3}$/GaN MOSFETs (metal-oxide-semiconductor field-effect transistors) separately with sapphire substrate and Si substrate are prepared. It is found that the performance of sapphire substrate device is better than that of silicon substrate. Comparing these two devices, the maximum drain current of sapphire substrate device (401 mA/mm) is 1.76 times that of silicon substrate device (228 mA/mm), and the field-effect mobility ($\mu_{\rm FEmax}$) of sapphire substrate device (176 cm$^{2}$/V$\cdot$s) is 1.83 times that of silicon substrate device (96 cm$^{2}$/V$\cdot$s). The conductive resistance of silicon substrate device is 21.2 $\Omega {\cdot }$mm, while that of sapphire substrate device is only 15.2 $\Omega {\cdot }$mm, which is 61% that of silicon substrate device. The significant difference in performance between sapphire substrate and Si substrate is related to the differences in interface and border trap near Al$_{2}$O$_{3}$/GaN interface. Experimental studies show that (i) interface/border trap density in the sapphire substrate device is one order of magnitude lower than in the Si substrate device, (ii) Both the border traps in Al$_{2}$O$_{3}$ dielectric near Al$_{2}$O$_{3}$/GaN and the interface traps in Al$_{2}$O$_{3}$/GaN interface have a significantly effect on device channel mobility, and (iii) the properties of gallium nitride materials on different substrates are different due to wet etching. The research results in this work provide a reference for further optimizing the performances of silicon substrate devices.     

可见光谱法测定单一、混合组分中的染料浓度

提出可见光谱技术对染料浓度进行定量分析,以保证重复染色的一致性.在定量分析单一三原色活性染料光谱特性的基础上,结合线性回归、双波长法、联立方程等方法,对混合组分染料进行分析,结果表明,光谱法可以实现染料组分的精确测量,相对误差小于士3％(单组分)和士4％(混合组分),具有广泛的应用前景.