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建立不同粒径球阻抗理论计算方法,提出球阻抗理论计算公式为6ρ/pd(ρ和d分别为球材料电阻率和球粒径),球阻抗理论计算数值与球粒径呈反比。通过实验测量3种不同粒径钢球阻抗数值,实验结果与理论计算相近。为计算不同粒径阻抗编码微球的理论阻抗数值提供数学公式。 相似文献
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The effects of ^60Co γ-ray irradiation on the DC characteristics of enhancement-mode A1GaN/GaN high-electron-mobility transistors 下载免费PDF全文
The effects of ^60Co γ-ray irradiation on the DC characteristics of AlGaN/GaN enhancement-mode high-electron- mobility transistors (E-mode HEMTs) are investigated. The results show that having been irradiated by^60Co γ-rays at a dose of 3 Mrad (Si), the E-mode HEMT reduces its saturation drain current and maximal transconductance by 6% and 5%, respectively, and significantly increases both forward and reverse gate currents, while its threshold voltage is affected only slightly. The obvious performance degradation of E-mode A1GaN/GaN HEMTs is consistent with the creation of electronegative surface state charges in the source-gate spacer and gate-drain spacer after being irradiated. 相似文献
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The effects of <sup>60</sup>Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors 下载免费PDF全文
The effects of 60Co γ-ray irradiation on the DC characteristics of AlGaN/GaN enhancement-mode high-electron-mobility transistors (E-mode HEMTs) are investigated. The results show that having been irradiated by 60Co γ-rays at a dose of 3 Mrad (Si), the E-mode HEMT reduces its saturation drain current and maximal transconductance by 6% and 5%, respectively, and significantly increases both forward and reverse gate currents, while its threshold voltage is affected only slightly. The obvious performance degradation of E-mode AlGaN/GaN HEMTs is consistent with the creation of electronegative surface state charges in the source-gate spacer and gate-drain spacer after being irradiated. 相似文献
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在激光分子束外延实验中,用RHEED原位监测了SrTiO3基片初始、退火以及同质外延过程中的表面形态.通过对RHEED图案分析,获取了表面面内的晶格常数振荡与衍射条纹的半高宽振荡现象,前者是由退火重构表面与薄膜之间的界面造成的,后者与二维岛边界的弛豫相关.另外还观察到了等离子体对入射电子束的影响而导致的RHEED强度振荡行为的相位移现象.
关键词:
反射高能电子衍射
SrTiO3
表面晶格常数及衍射强度振荡 相似文献
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低浓度小分子检测对基于薄膜体声波谐振器的传感器的分辨率提出了较高要求,针对以上需求,提出一种提高薄膜体声波传感器分辨率的主动控制方法,即在谐振器的驱动电压上叠加一个反馈电压,该反馈电压是对通过谐振器的电流施加一个常数增益和一个常数相位差得到.反馈电压产生的声能部分地补偿了材料阻尼和声音散射引起的声能损失,进而提高了薄膜体声波传感器的品质因子和质量分辨率.忽略电极影响,基于连续介质理论得到了具有主动控制功能的薄膜体声波传感器阻抗的显式表达式.数值仿真结果表明,薄膜体声波传感器的阻抗强烈依赖于反馈电压相对于电流的增益和相位差,当采用适当的增益和相位差时,传感器的质量分辨率可以大幅提高.以上主动控制方法对提高石英晶体微天平的分辨率同样有效. 相似文献