材料参数拟合方法对弹靶侵彻仿真的影响

弹靶侵彻仿真中材料参数对计算结果有着至关重要的影响。为寻求一套适用于弹靶侵彻仿真计算的材料参数拟合方法,借助前期开展的靶板材料动态力学性能试验、靶板材料断裂试验,通过不同拟合方法依次得到不同的JC本构模型及失效模型参数,依据试验建立有限元计算模型,将数值计算结果与试验结果进行对比。结果表明:(1)对于同一材料的力学性能试验,采用不同的拟合方法可得到不同的JC本构、JC失效参数,二者会对弹靶仿真结果造成一定影响;(2)在不考虑温度软化项的前提下,采用高应变率作为参考应变率进行拟合能更加准确地表征材料在高应变率下的应力-应变关系,更加适用于弹靶侵彻强瞬态、高应变率作用过程仿真;(3)对于同一JC本构模型,采用平均应力三轴度拟合的JC失效模型较采用初始应力三轴度拟合的JC失效模型所得战斗部剩余速度计算结果偏小,仅采用拉伸试件结果拟合的JC失效模型较采用扭转、拉伸试件结果拟合的JC失效模型所得战斗部剩余速度计算结果偏小。     

Decaying solitary waves propagating in one-dimensional damped granular chain

We numerically investigate the nonlinear waves propagating in a one-dimensional particle chain when the damping effect is taken into account. It is found that decaying solitary waves exist, in which the amplitude of the wave decreases exponentially as time increases. Meanwhile, the velocity of the solitary wave also slows down as time goes. This result implies that the damping coefficient is an important parameter in such a nonlinear system. Theoretical analysis has also been done by the reductive perturbation method. The result indicates that the nonlinear waves propagating in such a system can be described by the damped KdV equation.     

氮掺杂碳球/银纳米材料用作过氧化氢传感器

以氮掺杂碳球作为载体负载银纳米材料,并将其用作非酶电化学传感器对过氧化氢进行检测.考察了过氧化氢浓度、扫描速率对电化学信号的影响,并采用计时电流法对传感器的性能进行了研究.电化学测试结果表明,该复合材料在磷酸缓冲溶液中对过氧化氢还原响应快速、稳定,重复性良好,可以达到1.5μmol/L的检出限.     

C70O2可能异构体的结构和电子光谱的理论研究＊

用AM1、 PM3及INDO系列方法研究了C     

Reactive Ion Etching as Cleaning Method Post Chemical Mechanical Polishing for Phase Change Memory Device

In order to improve nano-scale phase change memory performance, a super-clean interface should be obtained after chemical mechanical polishing （CMP） of Ge2Sb2Te5 phase change films. We use reactive ion etching （RIE） as the cleaning method. The cleaning effect is analysed by scanning electron microscopy and an energy dispersive spectrometer. The results show that particle residue on the surface has been removed. Meanwhile, Ge2Sb2Te5 material stoichiometric content ratios are unchanged. After the top electrode is deposited, currentvoltage characteristics test demonstrates that the set threshold voltage is reduced from 13 V to 2.7V and the threshold current from 0.1 mA to 0.025 mA. Furthermore, we analyse the RIE cleaning principle and compare it with the ultrasonic method.     

二维双曲型守恒律的一种五阶松弛格式

松弛格式是Jin和Xin提出的无振荡有限差分方法,其主要思想是将守恒律转化为松弛方程组进行求解.本文用逐维五阶WENO重构和显隐式Runge-Kutta方法对松弛方程组的空间和时间进行离散,得到了一种求解二维双曲型守恒律五阶松弛格式.所得格式保持了松弛格式简单的优点,不用求解Riemann问题和计算通量函数的雅可比矩阵.通过二维Burgers方程和二维浅水方程的数值算例验证了格式的有效性.     

Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy

Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state （higher resistance state） to the crystalline state （lower resistance state）. The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low （only several μA）. An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad（Si）, which makes it attractive for space-based applications.     

一种新的求解双曲型守恒律的三阶中心差分格式

本文提出了一种求解双曲型守恒律新的三阶中心差分格式，主要是引入了一种推广的三阶重构，并证明了这种重构在网格边界无振荡．所提的格式保持了中心差分格式简单的优点，不需用Riemann解算器，避免了进行特征解耦．数值试验结果表明本文格式是高精度、高分辨率的。     

Single Crystal Si Layers on Glass Fabricated by Hydrophilic Fusion Bonding and Smart-Cut Technology

A single crystal Si thin film on a glass substrate has been obtained successfully by hydrophilic fusion bonding and the smart-cut technology. Tensile strength testing shows that the bonded interface has strong adhesion and the bonding strength is about 8.7MPa. Crystallinity and microstructure of the samples have been characterized by transmission electron microscopy (TEM). Electrical properties have also been investigated by Hall measurements and four-point probe. The mobility of the transferred Si layer on glass is about 122cm^2//V.s. The results show that the single-crystal silicon layer transferred onto glass by direct bonding keeps good quality for the applications of integrated circuits, transducers, and fiat panel display.     

Quantum—Confined Stark Effect of Vertically Stacked Self—Assembled Quantum Discs

We study the electronic energy levels and probability distribution of vertically stacked self-assembled InAs quantum discs system in the presence of a vertically applied electric field. This field is found to increase the splitting between the symmetric and antisymmetric levels for the same angular momentum. The field along the direction from one disc to another affects the electronic energy levels similarly as that in the opposite direction because the two discs are identical. It is obvious from our calculation that the probability of finding an electron in one disc becomes larger when the field points from this disc to the other one.