Modified Photoluminescence by Silicon-Based One-Dimensional Photonic Crystal Microcavities

photoluminescence (PL) lrom one-dimensional photonic band structures is investigated. The doped photonic crystal with microcavitles are fabricated by using alternating hydrogenated amorphous silicon nitride (a-SiNx:H/a-SiNy:H) layers in a plasma enhanced chemical vapour deposition (PECVD) chamber. It is observed that microcavities strongly modify the PL spectra from active hydrogenated amorphous silicon nitride (a-SiNx:H) thin film. By comparison, the wide emission band width 208nm is strongly narrowed to 11 nm, and the resonant enhancement of the peak PL intensity is about two orders of magnitude with respect to the emission of the λ/2-thick layer of a-SiNx:H. A linewidth of Δλ=11 nm and a quality factor of Q=69 are achieved in our one-dimensional a-SiNz photonic crystal microcavities. Measurements of transmittance spectra of the as-grown samples show that the transmittance resonant peak of a cavity mode at 710nm is introduced into the band gap of one-dimensional photonic crystal distributed Bragg reflector (DBR), which further verifies the microcavity effects.     

双能带三维光子晶体中二能级原子的自发辐射

研究了双能带三维光子晶体中二能级原子自发辐射的性质.由于双能带各向异性色散关系的影响，辐射场中的局域场和传输场不能共存，导致原子上能级占据数不再具有准周期性振荡的性质，而是随时间趋于常数，或者随时间按幂函数形式衰减，或者随时间按指数形式衰减.这些性质不仅与原子上能级和能带带边的相对位置有关，而且与光子晶体上、下能带之间的能隙宽度有关.这些性质也有别于单能带各向同性光子晶体中二能级原子自发辐射的性质. 关键词： 光子晶体 二能级原子 自发辐射     

非晶碳化硅材料与光学微腔的制备与发光

利用等离子体化学气相沉积技术在100℃的衬底温度下,制备了具有不同组分比的系列非晶碳化硅薄膜。结合傅里叶变换红外光谱与喇曼光谱对所制备的薄膜微结构进行了表征与分析,同时,对具有不同组分比的非晶碳化硅薄膜室温光致发光性质进行了系统的研究。结果表明在Ar⁺离子激光和Xe灯紫外光的激发下,不同组分的样品显示出不同的光致发光特性,并对样品的发光特性与其微结构的联系进行了讨论。在此基础上,用碳化硅薄膜设计和制备了全固体光学微腔,研究了微腔对碳化硅发光行为的调制作用。     

基于低成本IMU的捷联航姿系统软件设计与实现

在已设计好的捷联航姿系统硬件平台基础上,集传感器信息处理模块、航姿解算模块和信息融合模块于一体,综合设计了基于低成本IMU的捷联航姿系统软件算法.特别是在信息融合模块中采用了基于模糊推理的变加权系数多传感器信息融合算法,从而实现对惯性数据的融合,减小了系统随时间积累的航姿误差,保证航姿系统的精度指标满足要求(静态航姿精度±1.0°,动态航姿精度±2.5°).软件算法的验证采用低成本MT9-B惯性测量组件的实测数据分别进行了静、动态实验.实验结果表明,所设计的软件算法可时实进行低成本陀螺的零偏估计与补偿,并能准确地进行多传感器信息融合,从而能够有效地提高系统的航姿精度.     

Low-Temperature Heat Capacities and Thermodynamic Properties of Hydrated Nickel L-Threonate Ni（C4H7O5）2·2H2O（S）

Low-temperature heat capacities of the compound Ni（C4H7O5）2·2H2O（S） have been measured with an auto- mated adiabatic calorimeter. A thermal decomposition or dehydration occurred in 350--369 K. The temperature, the enthalpy and entropy of the dehydration were determined to be （368.141 ±0.095） K, （18.809±0.088） kJ·mol ^-1 and （51.093±0.239） J·K^-1·mol^-1 respertively. The experimental values of the molar heat capacities in the temperature regions of 78-350 and 368-390 K were fitted to two polynomial equations of heat capacities （Cp,m） with the reduced temperatures （X）, [X=f（T）], by a least squares method, respectively. The smoothed molar heat capacities and thermodynamic functions of the compound were calculated on the basis of the fitted polynomials. The smoothed values of the molar heat capacities and fundamental thermodynamic functions of the sample relative to the standard reference temperature 298.15 K were tabulated with an interval of 5 K.     

Pseudo nanocrystal silicon induced .luminescence enhancement in a-Si/SiO2 multilayers

Enhanced photoluminescence （PL） at room temperature from thermally annealed a-Si：H/SiO2 multilayers is observed through the step-by-step thermal post-treatment. The correlation between the PL and the crystallization process is studied using temperature-dependent PL, Raman, cross section high-resolution transmission electron microscopy （XHRTEM） and x-ray diffraction （XRD） techniques. An intensified PL band around 820 nm is discovered from the sample annealed near the crystallization onset temperature, which is composed of two peaks centred at 773 nm and 863 nm, respectively. It is found that the PL band centred at 863 nm is related to the pseudo nanocrystal （p-nc-Si） silicon, and the PL band centred at 773 nm is attributed to Si = O bonds stabilized in the p-nc-Si surface.     

Preparation, Crystal Structure and Enthalpy Change of Formation of the Reaction in Liquid Phase of a New Three- Dimensional Mixed-Ligand Holmium（Ⅲ）Coordination Polymer Based on Strong π-π Stacking Interactions

A new three-dimensional coordination polymer, [Ho（5-nip）（phen）（NO3）（DMF）] （5-nip=5-nitroisophthalic acid and phen=1,10-phenanthroline）, was prepared and characterized by single crystal X-ray diffraction, elemental analysis, IR spectrum and DTG-DSC techniques. The results show that the title complex crystallizes in space group P2/m with a= 1.0906（3） nm, b =1.2804 （3） nm, c= 1.6987（4） nm, β=91.400（5）°, Z=4, Dc= 1.931 Mg/m^3, F（000）= 1352. Each Ho（Ⅲ） ion is nine-coordinated by one chelating bidentate and two monodentate bridging carboxylate groups, one chelating bidentate NO3 anion, one DMF molecule and one 1,10-phenanthroline molecule. The complex is constructed with one-dimensional ribbons featuring dinuclear units and the one-dimensional ribbons are further assembled into two-dimensional networks by strong π-π stacking interactions with the distance of 0.327 nm, then the networks are arranged into three-dimensional structure according to ABAB fashion. The complex exhibits high stability up to 600 ℃. Its enthalpy change of formation of the reaction in liquid-phase in solvent DMF was measured using an RD496-Ⅲ type microcalorimeter with a value of （-11.016±0.184） kJ·mol^-1.     

Eigenmode Splitting in all Hydrogenated Amorphous Silicon Nitride Coupled Microcavity

Hydrogenated amorphous silicon nitride based coupled optical microcavity is investigated theoretically and ex- perimentally. The theoretical calculation of the transmittance spectra of optical microcavity with one cavity and coupled microcavity with two-cavity is performed. The optical eigenmode splitting for coupled microcavity is found due to the interaction between the neighbouring localized cavities. Experimentally, the coupled cavity samples are prepared by plasma enhanced chemical vapour deposition and characterized by photoluminescence measurements. It is found that the photoluminescence peak wavelength agrees well with the cavity mode in the calculated transmittance spectra. This eigenmode splitting is analogous to the electron state energy splitting in diatom molecules.     

铜氧化物超导体两能隙问题的电子拉曼散射理论研究

电子拉曼实验表明在空穴型掺杂的铜氧化物超导体中存在两能隙行为,即在欠掺杂区,随着掺杂浓度的降低,一个能隙逐渐增大而且在超导转变温度以上仍然存在,而另一个能隙逐渐减小且在DDW态依然存在.解释两能隙行为非常重要因为它与赝能隙的机理密切相关.本文计算了超导序和d-density-wave(DDW)序竞争机理下相图上不同区域的电子拉曼谱,发现欠掺杂区能隙表现出两能隙行为,与实验一致.特别地,本文发现B_1g峰对应能量由超导和DDW序共同决定,且随着掺杂浓度的降低而增大,在D 关键词： 两能隙 电子拉曼散射 竞争序     

Ga掺杂ZnO电子结构和吸收光谱的第一性原理研究

采用第一性原理的平面波赝势方法和广义梯度近似,研究了纤锌矿ZnO掺杂Ga前后的电子结构和光学性质.计算结果表明,ZnO中引入杂质Ga后,导带底主要由Ga4s态和Zn4s态构成,并且Ga4s态跨过费米能级,形成n型半导体.计算得到电子浓度为2.42×10~(21)cm~(-3),掺Ga有效提高了ZnO的载流子浓度.同时ZnO掺Ga后,ZnO的光学带隙从3.47 eV展宽为4.25 eV,并且在可见光区几乎无吸收,是理想的透明导电材料.