排序方式: 共有6条查询结果,搜索用时 0 毫秒
1
1.
Tunable and switchable Ba 0.5 Sr 0.5 TiO 3 film bulk acoustic resonators(FBARs) based on SiO 2 /Mo Bragg reflectors are explored,which can withstand high temperature for the deposition of Ba x Sr 1 x TiO 3(BST) films at 800 C.The dc bias-dependent resonance may be attributed to the piezoelectricity of the BST film induced by an electrostrictive effect.The series resonant frequency is strongly dc bias-dependent and shifts downwards with dc bias increasing,while the parallel resonant frequency is only weakly dc bias-dependent and slightly shifts upwards at low dc bias( 45 V) while downwards at higher dc bias.The calculated relative tunability of shifts at series resonance frequency is around 2.3% and the electromechanical coupling coefficient is up to approximately 8.09% at 60-V dc bias,which can be comparable to AlN FBARs.This suggests that a high-quality tunable BST FBAR device can be achieved through the use of molybdenum(Mo) as the high acoustic impedance layer in a Bragg reflector,which not only provides excellent acoustic isolation from the substrate,but also improves the crystallinity of BST films withstanding higher deposition temperature. 相似文献
2.
钛合金表面类金刚石碳梯度薄膜的摩擦磨损性能研究 总被引:17,自引:8,他引:9
与Ti6Al4V合金/超高分子量聚乙烯摩擦副对比,考察了Ti6Al4V合金表面类金刚石碳梯度薄膜/超高分子量聚乙烯摩擦副在干摩擦以及Hank’s溶液和生理盐水润滑下的摩擦磨损性能,采用扫描电子显微镜观察试样磨损表面形貌,并进而分析磨损机理。结果表明,类金刚石碳梯度薄膜具有良好的减摩抗磨性能,其体积磨损率约为相同条件下Ti6Al4V合金体积磨损率的50%,相应的超高分子量聚乙烯偶件的磨损率亦较低,类金刚石碳梯度薄膜的磨损呈现轻微磨粒磨损特征,而超高分子量聚乙烯可抑制类金刚石碳梯度薄膜的磨粒磨损。 相似文献
3.
本文基于密度泛函理论(DFT)的第一原理方法,计算了Ti原子位置对BaTiO3电子结构的影响.Ti的位置变化导致晶格畸变,使电子结构发生变化;从能带结构、能态密度(DOS)、电子密度、Mulliken布居等计算结果分析表明,导带和价带主要由Ti的3d电子和O的2p电子,Ti原子位置的变化,使Ti的3d电子能量分布上移,而O的2p电子能量下移;Ti位置变化,Ti的3d电子与的sp电子形成的杂化轨道更趋向离子化,以致于使OI出现了正电荷,表明发生了的2p电子向Ti的转移;O原子电子的转移使得Ti原子在导带的3d电子能量降低,与O原子在价带的2p电子能量重叠,禁带消失;随着畸变程度提高,转移逐渐增强,使禁带宽度逐渐减小,直至完全消失. 相似文献
4.
5.
Tunable Ba<sub>0.5</sub> Sr<sub>0.5</sub> TiO<sub>3</sub> film bulk acoustic resonators using SiO<sub>2</sub> /Mo Bragg reflectors 下载免费PDF全文
Tunable and switchable Ba 0.5 Sr 0.5 TiO 3 film bulk acoustic resonators(FBARs) based on SiO 2 /Mo Bragg reflectors are explored,which can withstand high temperature for the deposition of Ba x Sr 1 x TiO 3(BST) films at 800 C.The dc bias-dependent resonance may be attributed to the piezoelectricity of the BST film induced by an electrostrictive effect.The series resonant frequency is strongly dc bias-dependent and shifts downwards with dc bias increasing,while the parallel resonant frequency is only weakly dc bias-dependent and slightly shifts upwards at low dc bias(< 45 V) while downwards at higher dc bias.The calculated relative tunability of shifts at series resonance frequency is around 2.3% and the electromechanical coupling coefficient is up to approximately 8.09% at 60-V dc bias,which can be comparable to AlN FBARs.This suggests that a high-quality tunable BST FBAR device can be achieved through the use of molybdenum(Mo) as the high acoustic impedance layer in a Bragg reflector,which not only provides excellent acoustic isolation from the substrate,but also improves the crystallinity of BST films withstanding higher deposition temperature. 相似文献
6.
射频磁控溅射法室温下在Pt/Ti/SiO2/Si上制备非晶Pb(Zr048Ti052)O3薄膜,非晶PZT薄膜分别经常规炉退火(CFA)处理和快速热退火(RTA)处理晶化为(100),(111)不同择优取向的多晶薄膜. 采用x射线衍射测定了薄膜相组分、择优取向度;用原子力显微镜和压电响应力显微镜观察了薄膜表面形貌,以及对应区域由自发极化形成的铁电畴像,观察了不同取向薄膜的电畴分布特征. 结果表明,RTA晶化过程钙钛矿结构PZT结晶主要以PZT/Pt界面处的PtPb化合物为成核点异质形核并类似外延的结晶生长,沿界面结晶速率远大于垂直膜面结晶速率,而CFA晶化样品成核发生在膜内杂质缺陷处,以同质成核为主. 不同的成核机理导致了不同晶面择优取向生长.
关键词:
PZT薄膜
结晶
形核
力显微技术 相似文献
1