Effects of Ni-Doping on Microstructures and Properties of Zn-20Sn High-Temperature Lead-Free Solders

In the present work, the effect of Ni doping on the microstructures and properties of Zn-20 Sn high temperature lead-free solder has been investigated. Interestingly,Ni was present as the form of Ni-Zn compounds in the microstructure of Zn-20 Sn-xNi alloy.When the Ni-doping amount was 0.2～0.4 wt.%, the presence of δ phase was found, and when the doping amoun was 0.8 wt.%, the presence of γ phase was observed. With the increase of Ni content, the liquidus temperature increased but the solidus temperature did not change obviously. In addition, the microhardness and electrical resistivities of Zn-20 Sn-xNi solder increased gradually. And the spreading area and shear strength increased firstly but decreased afterwards. When the content of Ni was 0.4 wt.%, the spreading area and shear strength of solder reached to be maximum. After the addition of 0.4 wt.% Ni, the microstructure of the interfacial intermetallic compound(IMC) layer of the interface didn't change, but the total thickness of the IMC layer reduced. The δ-phase was embedded in the grain boundary of ε-Cu Zn5, which hindered the diffusion of atoms. The thickness of IMC layer at the interface reduced, which led to the improvement of the shear strength of the interface.     

UHMWPE基体上沉积GLC薄膜及其摩擦磨损性能研究

改善超高分子量聚乙烯(UHMWPE)臼杯的耐磨性能是提高人工髋关节使用寿命的关键.本文在UHMWPE基体上采用非平衡直流磁控溅射沉积类石墨碳(GLC)薄膜,用扫描电镜、台阶轮廓仪考察了薄膜形貌和表面粗糙度,拉曼光谱分析了GLC薄膜的结构.用划痕仪和球-盘式摩擦磨损机研究了GLC薄膜与UHMWPE基体的界面结合力和GLC薄膜的摩擦磨损性能.结果表明:磁控溅射法制备的GLC薄膜与基体结合力大于90 N,且对表面粗糙度没有影响;表面镀覆GLC薄膜的体积磨损率为1.6×10-17 m3/(N·m),是UHMWPE的1/19.