Measurements of the Cross-sections of Produced Short-Lived Nuclei Induced by Neutrons around 14 MeV on Isotopes of Tungsten

New experimental cross-section data for the180 W(n,2 n)179 mW,186 W(n,2 n)185 mW and186 W(n,p)186 Ta reactions at the neutron energies of 13.5 and 14.4 MeV are obtained by the activation technique. The neutron beams are produced by means of the3 H(d,n)4 He reaction. The gamma activities of the product nuclei are measured by a high-resolution gamma-ray spectrometer with a coaxial high-purity germanium detector. The neutron fluence is determined using the monitor reaction93 Nb(n,2 n)92 mNb. The results in the current work are discussed and compared with the measurement results found in the literature. It is shown that these higher accuracy experimental cross-section data around the neutron energy of 14 MeV agree with some previous experimental values from the literature within experimental uncertainties.     

Investigation of active-region doping on InAs/GaSb long wave infrared detectors

The eight-band κ·p model is used to establish the energy band structure model of the type-II InAs/GaSb superlattice detectors with a cut-off wavelength of 10.5μm,and the best composition of M-structure in this type of device is calculated theoretically.In addition,we have also experimented on the devices designed with the best performance to investigate the effect of the active region p-type doping temperature on the quantum efficiency of the device.The results show that the modest active region doping temperature(Be:760℃)can improve the quantum efficiency of the device with the best performance,while excessive doping(Be:>760℃)is not conducive to improving the photo response.With the best designed structure and an appropriate doping concentration,a maximum quantum efficiency of 45% is achieved with a resistance-area product of 688?·cm^2,corresponding to a maximum detectivity of 7.35×10^11cm·Hz^1/2/W.     

奇怪吸收子的多标度性质

长期以来人们认为一些奇怪吸收子可表示为整数维流形与类康托集的直积，也就是在奇怪吸收子中存在一种自相似性，但是近年来，ｍｕｌｔｉｆｒａｃｔａｌｉｔｙ理论为为许多奇怪吸收子整体上并不是自相似的，但可以分解出一些具有自相性标度因子的子集，即多标度性，它揭示了隐藏在线性动力系的奇怪吸收子中的重要信息，本文用这些子集中相似维数及奇怪吸收子的体积收缩率来计算刻划这些子集自相似的标度因子，计算并分析了Ｈｅｎｏｎ     

NUMERICAL SIMULATION OF FLOW OF HIGHLY VISCOELASTIC FLOW IN THREE－DIMENSIONAL VARYING THICK SLIT CHANNEL

（杨伯源）（李勇）ＮＵＭＥＲＩＣＡＬＳＩＭＵＬＡＴＩＯＮＯＦＦＬＯＷＯＦＨＩＧＨＬＹＶＩＳＣＯＥＬＡＳＴＩＣＦＬＯＷＩＮＴＨＲＥＥ－ＤＩＭＥＮＳＩＯＮＡＬＶＡＲＹＩＮＧＴＨＩＣＫＳＬＩＴＣＨＡＮＮＥＬ￥ＹａｎｇＢｏｙｕａｎ；ＬｉＹｏｎｇ（Ｄｅｐａｒｔ...     

硫脲掺杂金刚石的高温高压合成及FT-IR光谱研究

利用温度梯度法,在6.5 GPa、1 300～1 350℃的高温高压极端物理条件下,通过在FeNiCo-C合成体系中添加硫脲(CH4N2S)成功合成了金刚石,所合成的晶体呈现出黄色且具有六-八面体形貌.利用扫描电镜(SEM)对所合成金刚石的表面形貌进行了表征,测试结果表明,随着合成体系中CH4N2S添加量的逐渐增加,所合成金刚石的表面变得逐渐粗糙.借助傅里叶红外(FT-IR)光谱对金刚石样品内部的氮、氢缺陷以及化学键结构进行了测试分析,结果表明,金刚石中的氢元素以-CH3,-CH2-,C-H形式存在,而其内部的氮杂质以C心、A心形式存在.此外,在3 300～3 600 cm-1观察到NH的吸收带.     

飞行时间质谱仪固体样品自动进样系统研制

以常规型飞行时间质谱仪为基础,通过配置移动平台、样品杆、工业相机、LED灯源、工业显示屏等部件,研制了一套飞行时间质谱仪用固体样品自动进样系统,实现了固体有机样品的直接进样分析。该装置具有一定的普适性,可为相关实验室设备升级改造提供借鉴和参考。该装置可进行难溶未知有机化合物的结构剖析,实现目标物的快速筛查,且操作人员可实时观测锥孔处样品状态并可软件操控进样位置,实现人机分离的自动化测试。     

Activation cross-sections of titanium isotopes at neutron energies of 13.5–14.8 MeV

The cross-sections for ~(46) Ti(n,2 n)~(45) Ti, ~(46) Ti(n,p)~(46 m+g) Sc+~(47) Ti(n,d*)~(46 m+g) Sc, ~(46)Ti(n,p)~(46 m+g) Sc, ~(47) Ti(n,p)~(47) Sc+~(48) Ti(n,d*)~(47) Sc, ~(47) Ti(n,p)~(47) Sc, ~(48) Ti(n,p)~(48) Sc+~(49) Ti(n,d*)~(48) Sc,~(48) Ti(n,p)~(48) Sc, and ~(50) Ti(n,α)~(47) Ca reactions were investigated around neutron energies of 13.5–14.8 Me V by means of the activation technique. Fast neutrons were produced by the~3 H(d,n)~4 He reaction. Neutron energies from different directions in the measurements were obtained in advance using the method of cross-section ratios for ~(90) Zr(n,2 n)~(89 m+g) Zr and ~(93) Nb(n,2 n)~(92 m) Nb reactions. The results obtained are analyzed and compared with the experimental data provided by the literature and verified nuclear data in the JEFF-3.3,CENDL-3.1, ENDF/B-VIII.0 libraries, as well as results calculated by Talys-1.9 code.     

CdS/Si nanofilm heterojunctions based on amorphous silicon films:Fabrication,structures,and electrical properties

Shortening the distance between the depletion region and the electrodes to reduce the trapped probability of carriers is a useful approach for improving the performance of heterojunction.The CdS/Si nanofilm heterojunctions are fabricated by using the radio frequency magnetron sputtering method to deposit the amorphous silicon nanofilms and Cd S nanofilms on the ITO glass in turn.The relation of current density to applied voltage(I-V)shows the obvious rectification effect.From the analysis of the double logarithm I-V curve it follows that below~2.73 V the electron behaviors obey the Ohmic mechanism and above~2.73 V the electron behaviors conform to the space charge limited current(SCLC)mechanism.In the SCLC region part of the traps between the Fermi level and conduction band are occupied,and with the increase of voltage most of the traps are occupied.It is believed that Cd S/Si nanofilm heterojunction is a potential candidate in the field of nano electronic and optoelectronic devices by optimizing its fabricating procedure.