柔性悬臂梁与钢球碰撞机制模拟与响应分析

采用线性-弹簧阻尼模型模拟钢球与梁之间的碰撞机制,研究了钢球碰撞下柔性悬臂欧拉梁的衰减振动问题;通过分析推导并建立了整个系统的分段非线性动力学方程。数值结果表明:碰撞是一个瞬时的能量传递过程,碰撞前后梁与钢球的速度均会发生突变;柔性梁从碰撞中获得初始能量,在自身阻尼的作用下作衰减振动;改变系统的参数如钢球质量与速度、碰撞位置等均会对梁的衰减振动产生显著的影响。     

High throughput N-modular redundancy for error correction design of memristive stateful logic

Memristive stateful logic is one of the most promising candidates to implement an in-memory computing system that computes within the storage unit. It can eliminate the costs for the data movement in the traditional von Neumann system. However, the instability in the memristors is inevitable due to the limitation of the current fabrication technology, which incurs a great challenge for the reliability of the memristive stateful logic. In this paper, the implication of device instability on the reliability of the logic event is simulated. The mathematical relationship between logic reliability and redundancy has been deduced. By combining the mathematical relationship with the vector-matrix multiplication in a memristive crossbar array, the logic error correction scheme with high throughput has been proposed. Moreover, a universal design paradigm has been put forward for complex logic. And the circuit schematic and the flow of the scheme have been raised. Finally, a 1-bit full adder (FA) based on the NOR logic and NOT logic is simulated and the mathematical evaluation is performed. It demonstrates the scheme can improve the reliability of the logic significantly. And compared with other four error corrections, the scheme which can be suitable for all kinds of R-R logics and V-R logics has the best universality and throughput. Compared with the other two approaches which also need additional complementary metal-oxide semiconductor (CMOS) circuits, it needs fewer transistors and cycles for the error correction.     

温度改变对钛氧化物忆阻器导电特性的影响

相同测试条件下,纳米钛氧化物忆阻器的导电过程存在不稳定性,制约了对器件瞬态阻抗的精确读取与控制,并影响了器件应用于电路设计的可靠性与稳定性.杂质漂移与隧道势垒的共存是导致上述不稳定性的可能因素,且杂质漂移特性与环境温度密切相关.然而,目前尚无通过控制温度提高忆阻器导电稳定性的具体研究.基于杂质漂移与隧道势垒共存,本文分析了温度与忆阻器导电特性的关联,研究了器件活跃区域厚度及初始掺杂层厚度的改变对临界温度的影响,利用SPICE软件进行了仿真验证并给出结果,得出提高忆阻器导电稳定性的方法有:增大活跃区域厚度、降低初始杂质浓度及保持环境温度稳定且低于临界温度,从而为制备性能稳定的忆阻器及推动器件在实际电路中的应用提供依据.     

纳米晶复合Nd2Fe14B/α-Fe合金制备与磁性能的研究

采用熔体快淬及晶化处理工艺制备Nd11Fe71Co8V1.5Cr1B7.5纳米晶合金。经21m·s-1快淬及640℃ 4min晶化处理后,制成的粘结磁体的磁性能最佳,为:Br=0.64T,JHc=903.5kA·m-1,(BH)max=71kJ·m-3。添加Cr元素可提高内禀矫顽力,从而提高最大磁能积。     

强度不变的自动模式识别技术

针对光学模式识别技术用化要求，提出一种新的图像预处理算法，使识别现场光照明强度及分布的变化对识别效率所带来的影响大大降低。采用该算法进行实时硬件光学相关试验结果证实应用该算法可以实现强度的自动目标识别。     

A3Ln(Ⅲ)1-xTb(Ⅲ)x(A=邻氨基苯甲酸;Ln=La、Gd、Y; x=0-0.1)稀土配合物的荧光性能

采用共沉淀法合成了掺杂 L a、 Gd、 Y的 Tb-邻氨基苯甲酸配合物 ,研究其荧光性能 ,结果显示 ,掺杂L a、Gd、Y后 ,对 Tb配合物的发光有增敏作用 ,讨论了不同的掺杂离子 (L a、Gd、Y)及掺杂量对其荧光性能的影响。发现 ,当掺杂离子取代大部分 Tb3+时 ,其发光增强仍十分显著。     

A3Ln（Ⅲ）1—xTb（Ⅲ）x（A=邻氨基苯甲酸;Ln=La,Gd,Y;x=0—0.1）稀土配？…

采用共沉淀法合成了掺杂Ｌａ、Ｇｄ、Ｙ的Ｔｂ－邻氨基苯甲酸配合物,研究其荧光性能,结果显示,掺杂Ｌａ、Ｇｄ、Ｙ后,对Ｔｂ配合物的发光有增敏作用,讨论了不同的掺杂离子（Ｌａ、Ｇｄ、Ｙ）及掺杂量对其荧光性能的影响。发现,当掺杂离子取代大部分Ｔｂ＾３＋时,其发光增强仍十分显著。     

核心素养导向的基于思维导图的分析化学教学实践与探讨

运用"思维导图"这一教学策略,引导学生在学习过程中自发有效地对各知识点进行关联,构建完整的知识网络,进而改变学生单纯依靠"机械式"记忆的学习方法,锤炼其对知识点的凝练总结能力,培养学生的自主学习能力,实现基于核心素养培养观导向的以培养具有良好分析化学素养,具备竞争力和创新能力的高端人才培养目标。     

The conductive mechanisms of a titanium oxide memristor with dopant drift and a tunnel barrier

Nano-scale titanium oxide memristors exhibit complex conductive characteristics, which have already been proved by existing research. One possible reason for this is that more than one mechanism exists, and together they codetermine the conductive behaviors of the memristor. In this paper, we first analyze the theoretical base and conductive process of a memristor, and then propose a compatible circuit model to discuss and simulate the coexistence of the dopant drift and tunnel barrier-based mechanisms. Simulation results are given and compared with the published experimental data to prove the possibility of the coexistence. This work provides a practical model and some suggestions for studying the conductive mechanisms of memristors.