Insight into influence of thermodynamic coefficients on transient negative capacitance in Zr-doped HfO2 ferroelectric capacitors

We study the influence of the thermodynamic coefficients on transient negative capacitance for the Zr-doped HfO₂ (HZO) ferroelectric capacitors by the theoretical simulation based on the Landau-Khalatnikov (L-K) theory and experimental measurement of electrical properties in the resistor-ferroelectric capacitor (R-FEC) circuit. Our results show that the thermodynamic coefficients α, β and γ also play a key role for the transient NC effect besides the viscosity coefficient and series resistor. Moreover, the smaller coefficients α and β, the more significant the transient NC effect. In addition, we also find that the thermodynamic process of transient NC does not obey the generally accepted viewpoint of Gibbs free energy minimization.     

一系列基于混合配体策略构筑的金属有机骨架的合成、结构及性质

通过简单高效的醛酮缩合反应,合成了碱性配体2,6-二（4-吡啶基亚甲基）环己酮（BPCH）,采用3种芳香羧酸配体：对苯二甲酸（H₂TP）、间苯二甲酸（H₂IP）和均苯三甲酸（H₃TMA）,以混合配体策略制备了7例金属有机骨架（MOFs）。用单晶X射线衍射、红外光谱、粉末X射线衍射和热重分析对其进行表征并分析其拓扑结构。MOFs1、2、3均呈现为多样的三维结构,MOFs4~7表现为同构的二维结构。荧光测试结果显示该类化合物对Fe³⁺有较好的荧光猝灭效应,同时对于染料具有一定的吸附能力。     

基于关键路径链和PACGA的网络总线资源调度方法研究

针对传统工业控制网络总线资源调度算法在节点数量逐渐增加时收敛速度慢和搜索精度不高,且准确度及效率低等问题, 提出了一种基于关键路径链和多态蚁群遗传算法(PACGA)的资源调度方法,采用关键路径链的调度算法获取需求调度的节点,不同节点间采用多态蚁群遗传算法进行资源的调度,依据照工业控制网络资源调度的特征,用自适应调整挥发系数增强节点的全局搜索性能,通过候选节点集方法缩小搜索区域提高算法的搜索效率,完成工业控制网络总线资源的高效调度。仿真实验说明,该种方法在工业控制过程中任务数量较多的情况下仍然具备较高的运行效率和精度,并且具有较低的运行时间,具有较强的应用价值。     

北京谱仪Ⅲ电磁量能器触发系统的模拟研究

利用北京谱仪Ⅲ探测器模拟和触发系统模拟程序,研究了北京谱仪Ⅲ电磁量能器的触发方案.根据物理目标设计了中性事例触发,巴巴事例判选和带电事例触发的方案,优化了各触发条件的参数,并仔细研究了对本底的排斥能力.研究了一批典型的物理道,给出了它们的触发效率,同时给出了预期的本底触发事例率.     

Trigger efficiencies at BESⅢ

Trigger efficiencies at BESⅢ were determined for both the J/ψ and ψ＇ data taking of 2009. Both dedicated runs and physics datasets are used; efficiencies are presented for Bhabha-scattering events, generic hadronic decay events involving charged tracks, dimuon events and ψ＇→π＋π-J/ψ, J/ψ→ 1＋1- events.The efficiencies are found to lie well above 99% for all relevant physics cases, thus fulfilling the BESⅢ design specifications.     

以BAlq为主体的高效高色纯度的红色有机电致磷光器件

以铱配合物红色磷光体Ir(piq)₂(acac)为掺杂剂,制备了基于BAlq材料的红色电致磷光器件,其结构为ITO/NPB(30nm)/Ir(piq)₂(acac):BAlq(25nm)/BCP(13nm)/Alq₃(35nm)/LiF(1nm)/Al(1000nm),当掺杂浓度为8%的时候,器件发光的色坐标为(x=0.67,y=0.32),基本满足了全色显示对红色发光的要求。在电压为16V时,器件达到最高亮度9380cd/m²。在电流密度为5.45mA/cm²时,外量子效率达到最大5.7%。由于磷光体Ir(piq)₂(acac)的磷光寿命较短,所以器件在高电流密度下,仍然保持较高的外量子效率。电流密度为100mA/cm²时,外量子效率仍然维持在4.7%。进一步研究表明在器件中短程的Dexter能量传递以及红光染料对空穴的直接捕获两种机制同时存在。     

Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process

In the process of high-k films fabrication, a novel multi deposition multi annealing(MDMA) technique is introduced to replace simple post deposition annealing. The leakage current decreases with the increase of the post deposition annealing(PDA) times. The equivalent oxide thickness(EOT) decreases when the annealing time(s) change from 1 to 2. Furthermore,the characteristics of SILC(stress-induced leakage current) for an ultra-thin SiO_2/HfO_2 gate dielectric stack are studied systematically. The increase of the PDA time(s) from 1 to 2 can decrease the defect and defect generation rate in the HK layer. However, increasing the PDA times to 4 and 7 may introduce too much oxygen, therefore the type of oxygen vacancy changes.     

Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

The thickness effect of the TiN capping layer on the time dependent dielectric breakdown(TDDB) characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper.Based on experimental results,it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer.From the charge pumping measurement and secondary ion mass spectroscopy(SIMS) analysis,it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density.In addition,the influences of interface and bulk trap density ratio N_(it)/N_(ot) are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo(kMC) method.The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses.     

Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation

High-k metal gate stacks are being used to suppress the gate leakage due to tunneling for sub-45 nm technology nodes.The reliability of thin dielectric films becomes a limitation to device manufacturing,especially to the breakdown characteristic.In this work,a breakdown simulator based on a percolation model and the kinetic Monte Carlo method is set up,and the intrinsic relation between time to breakdown and trap generation rate R is studied by TDDB simulation.It is found that all degradation factors,such as trap generation rate time exponent m,Weibull slope β and percolation factor s,each could be expressed as a function of trap density time exponent α.Based on the percolation relation and power law lifetime projection,a temperature related trap generation model is proposed.The validity of this model is confirmed by comparing with experiment results.For other device and material conditions,the percolation relation provides a new way to study the relationship between trap generation and lifetime projection.     

探测器束流相关本底的实验研究

介绍了在北京正负电子对撞机上进行的束流相关本底实验研究,并与计算结果进行了比较.通过实验获得了束流相关本底的特征;并用相应的软件(TURTLE和GEANT3)对束流–气体相互作用本底进行了细致的模拟.实验和模拟结果的比较表明,现有的软件工具模拟在4倍以内是可靠的,从而为正在设计建造的新一代北京正负电子对撞机和北京谱仪的本底模拟奠定了基础.