双核磺化酞菁铜(Ⅱ)催化氧化α-萘酚

本文研究了以乙醇为溶剂,CaCl_2为助催化剂,双核磺化酞菁铜(Ⅱ)催化氧化α-萘酚制备α-萘醌的各种因素。提出了可能的反应机理。     

半球蓝宝石整流罩制造技术研究

整流罩在高速飞行中既要对空气进行整流,同时又起光学窗口的作用。蓝宝石材料硬度高,加工非常困难。分别从精磨模、精磨磨料、抛光膜层、抛光辅料、机床速度和压力等方面介绍了一种加工蓝宝石整流罩的工艺方法。     

Fe-B团簇的结构与磁性的第一性原理研究

采用局域密度近似下的密度泛函理论和原子轨道的线性组合方法,通过离散变分法自洽求解Kohn-Sham方程,详细地研究了Fe_nB(n≤6)团簇的结构和磁性,所得主要结论如下:第一,B原子更倾向于在团簇的表面而不是在团簇的内部,通常计算非晶态的四面体结构和三棱柱结构,对于孤立团簇而言是不稳定的,这说明环境对团簇的结构稳定性有重要影响;第二,当Fe_n+1团簇中的一个Fe原子被B原子取代形成Fe_n团簇时,其结合能增大而Fe原子的磁矩减小;第三,Fe<     

折/反混合式长波红外成像光谱仪光学系统设计

为了实现遥感目标的长波红外高光谱成像,满足目标探测对多信息量的需求,设计了高光谱分辨率长波红外(8~12 μm)成像光谱仪。前置望远系统采用离轴三反系统,以实现无遮拦、大口径及宽视场成像设计;光谱分光系统分别采用折射式和反射式结构进行优化设计。设计结果显示,采用折射式结构,可得到通光孔径为100 mm,F数为2,光谱分辨率16 nm,空间分辨率150 μrad,冷光阑效率100%,成像质量接近衍射极限的光学系统;采用反射式结构,为了保证光学系统无挡光,需采用多片离轴反射镜,增加了系统的非对称性,使得系统的像散、彗差和场曲难以校正到最佳状态。设计结果表明：折/反混合式成像光谱系统具有光谱分辨率高、成像质量好和结构合理等优点,点斑均方根直径与国内现有探测器像素尺寸匹配。     

Structural and bonding properties of ScSi_n~-(n=2～6) clusters:photoelectron spectroscopy and density functional calculations

Anion ion photoelectron spectroscopy and density functional theory (DFT) are used to investigate the electronic and structural properties of ScSi_n^- (n=2sim6) clusters and their neutrals. We find that the structures of ScSi_n^- are similar to those of Si_n+1^-. The most stable isomers of ScSi_n^- cluster anions and their neutrals are similar for n=2, 3 and 5 but different for n=4 and 6, indicating that the charge effect on geometry is size dependent for small scandium-silicon clusters. The low electron binding energy (EBE) tails observed in the spectra of ScSi_4,6^- can be explained by the existence of less stable isomers. A comparison between ScSi_n^- and VSi_n^- clusters shows the effects of metal size and electron configuration on cluster geometries.     

大视场红外导引头光学系统消热差设计

为消除温度变化对共形光学导引头像质的影响,利用光学被动消热差理论对具体设计方法进行实际分析.根据消热差条件选择合理的透镜材料组合,利用衍射元件特殊的光热特性采用折/衍混合结构进行消热差设计.采用椭球形共形整流罩结构减小空气阻力,降低导弹头部气动加热效应,利用三片式反远距结构实现短焦大视场系统设计.该系统工作波段为3～5 μm,系统F/#为2,视场角为±90°;凝视结构的导引头光学系统后工作距达22.8 mm,为制冷型探测器留有足够的空间;冷光阑效率为100％;在-40℃～60℃温度变化范围内,15 lp/mm处全视场MTF值均大于0.4,满足高准确度定位导引头系统对成像质量的要求,保证了系统的轻小型设计.     

基于交比不变性的投影仪标定

提出了一种新的投影仪标定方法以提高数字光栅投影三维测量中投影仪标定的准确性.该方法结合二次投影技术和交比不变性进行投影仪标定.采用二次投影技术解决投射图案与标定板图案互相干扰的问题;采用交比不变性以避免引入相机的标定误差.接着进行了对比实验,以验证所提方法的有效性.选取需要相机参数的传统投影仪标定方法以及根据全局单应性...     

玻壳成型过程诱导残余应力的数值预测

建立了玻壳压制成型固化过程中残余应力预测的数值模拟模型,采用平行平板间玻璃熔体的固化问题来描述成型过程中残余应力形成的机理,并假定材料为热流变简单粘弹性材料．基于板壳理论,将产品视为平板单元的组合,并采用有限元法来求解,这种方法可以象全三维计算一样一层层地计算残余应力,非常适合复杂形状的薄压制成型产品．最后通过实验比较验证了所提出的模型和方法．     

岩石脆性破坏临界信息综合识别

岩石脆性破坏导致的各种现象可以分为两类:①与物理力学参数和结构特征改变有关,表现为岩石本身变得破碎,承载力降低,变形速率增大,模量变小,渗透率增大,波速参数与电阻率值突变;②与能量释放及物理场参数变化有关,体现在声发射信号激增,电磁辐射强度增加,红外辐射加大.试验和理论分析表明:单轴条件下岩石破裂前临界特征点所对应的应力和岩石峰值应力比值约在70%-80%之间.论文通过分析得出,岩石脆性破坏的各种信息与岩石微破裂发展存在特定的关联性,利用综合信息源可以很好的进行脆性破坏临界点的识别.     

Degradation behavior of electrical properties of GaInAs (1.0 eV) and GaInAs (0.7 eV) sub-cells of IMM4J solar cells under1-MeV electron irradiation

In this work the degradation effects of the Ga_(0.7)In_(0.3)As(1.0 eV) and Ga_(0.42)In_(0.58)As(0.7 eV) sub-cells for IMM4J solar cells are investigated after 1-MeV electron irradiation by using spectral response and photoluminescence(PL) signal amplitude analysis, as well as electrical property measurements. The results show that, compared with the electrical properties of traditional single junction(SJ) GaAs(1.41 eV) solar cell, the electrical properties(such as Isc, Voc, and Pmax)of the newly sub-cells degrade similarly as a function of log ?, where ? represents the electron fluence. It is found that the degradation of Voc is much more than that of Isc in the irradiated Ga_(0.42)In_(0.58)As(0.7 eV) cells due to the additional intrinsic layer, leading to more serious damage to the space charge region. However, of the three types of SJ cells with the gap widths of 0.7, 1.0, and 1.4 eV, the electric properties of the Ga_(0.7)In_(0.3)As(1.0 eV) cell decrease largest under each irradiation fluence. Analysis on the spectral response indicates that the Jsc of the Ga_(0.7)In_(0.3)As(1.0 eV) cell also shows the most severe damage. The PL amplitude measurements qualitatively confirm that the degradation of the effective minority carrier life-time(τeff) in the SJ Ga_(0.7)In_(0.3)As cells is more drastic than that of SJ GaAs cells during the irradiation. Thus,the output current of Ga_(0.7)In_(0.3)As sub-cell should be controlled in the irradiated IMM4J cells.