Tuning the shell thickness of core-shell α-Fe2O3@SiO2 nanoparticles to promote microwave absorption

Various advanced microwave absorbing materials have been developed for reducing/avoiding the harm of microwave radiation.Among them,core-shell structural nanomaterials have been widely fabricated for microwave absorption.However,the“structure-performance”relationship between shell thickness and microwave absorption performance is rarely reported.In this paper,we first explored the“structureperformance”relationship between shell thickness and microwave absorption performance,based on the core-she...     

Pressure-induced novel structure with graphene-like boron-layer in titanium monoboride

The recent discovery of the novel boron-framework in boron-rich metal borides with complex structures and intriguing features under high pressure has stimulated the search into the unique boron-network in the metal monoborides or boron-deficient metal borides at high pressure. Herein, based on the particle swarm optimization algorithm combined with first-principles calculations, we thoroughly explored the structural evolution and properties of TiB up to 200 GPa. This material undergoes a pressure-induced phase transition of $Pnma$ $\to $ $Cmcm$ $\to $ $Pmmm$. Besides of two known phases $Pnma$ and $Cmcm$, an unexpected orthorhombic $Pmmm$ structure was predicted to be energetically favored in the pressure range of 110.88-200 GPa. Intriguingly, the B covalent network eventually evolved from a one-dimensional zigzag chain in $Pnma$-TiB and $Cmcm$-TiB to a graphene-like B-sheet in $Pmmm$-TiB. On the basis of the microscopic hardness model, the calculated hardness ($H_{\rm v}$) values of $Pnma$ at 1 atm, $Cmcm$ at 100 GPa, and $Pmmm$ at 140 GPa are 36.81 GPa, 25.17 GPa, and 15.36 GPa, respectively. Remarkably, analyses of the density of states, electron localization function and the crystal orbital Hamilton population (COHP) exhibit that the bonding nature in the three TiB structures can be considered as a combination of the B-B and Ti-B covalent interactions. Moreover, the high hardness and excellent mechanical properties of the three TiB polymorphs can be ascribed to the strong B-B and Ti-B covalent bonds.     

相对论皮秒激光在低密度等离子体中直接加速的电子束的横向分布特征研究

相对论皮秒激光与低密度等离子体作用可以通过"激光直接加速"机制获得超有质动力定标率的高能电子,且电荷量可以达到百n C级,在伽马射线产生、正电子产生等方面具有重要应用.然而激光直接加速电子束相比激光尾场加速电子束具有更大的发散角,同时实验观测的横向束分布也不均匀,但是其中的物理机制研究较少.本文通过二维粒子模拟证明,相对论皮秒激光在低密度等离子体中驱动的激光直接加速中,高能电子束会在激光偏振方向分叉,而且电子能量越高这种现象越明显.文章通过细致的理论分析解释了这种高能电子横向分布产生"分叉"结构的内在原因.在激光直接加速的过程中,电子在纵向获得加速的时候,它在激光偏振方向(横向) betatron振荡的动能也会随之增加,当电子的能量足够高时,二者呈线性关系,因此高能电子的横向速度的振幅近似相等,这种相等的振幅最终导致了高能电子束在激光偏振方向的分叉.     

High-frequency enhancement-mode millimeterwave AlGaN/GaN HEMT with an fT/fmax over 100 GHz/200 GHz

Ultra-thin barrier (UTB) 4-nm-AlGaN/GaN normally-off high electron mobility transistors (HEMTs) having a high current gain cut-off frequency (f_T) are demonstrated by the stress-engineered compressive SiN trench technology. The compressive in-situ SiN guarantees the UTB-AlGaN/GaN heterostructure can operate a high electron density of 1.27×10¹³cm^-2, a high uniform sheet resistance of 312.8 Ω /□, but a negative threshold for the short-gate devices fabricated on it. With the lateral stress-engineering by full removing in-situ SiN in the 600-nm SiN trench, the short-gated (70 nm) devices obtain a threshold of 0.2 V, achieving the devices operating at enhancement-mode (E-mode). Meanwhile, the novel device also can operate a large current of 610 mA/mm and a high transconductance of 394 mS/mm for the E-mode devices. Most of all, a high f_T/f_max of 128 GHz/255 GHz is obtained, which is the highest value among the reported E-mode AlGaN/GaN HEMTs. Besides, being together with the 211 GHz/346 GHz of f_T/f_max for the D-mode HEMTs fabricated on the same materials, this design of E/D-mode with the realization of f_max over 200 GHz in this work is the first one that can be used in Q-band mixed-signal application with further optimization. And the minimized processing difference between the E- and D-mode designs the addition of the SiN trench, will promise an enormous competitive advantage in the fabricating costs.     

对使用主成分进行绩效指标值排名的讨论

对《基于数据的Goodgrant基金最优投资策略》一文使用主成分分析进行综合评价,对候选学校绩效指标值排名进行了探讨。首先,综合前人研究与本题实际,指出使用主成分分析进行综合评价存在的争议与不足;然后,分别建立TOPSIS模型和综合评价模型对候选学校的绩效指标值进行排名,并对不同方法得到的结果进行对比。结果表明,TOPSIS模型和综合评价模型得到的排名具有高度一致性,前50名重合率达98%,而与主成分分析综合评价的重合率仅有6%,说明使用TOPSIS等传统评价模型对候选学校绩效指标值进行排名更合适。     

Dithienylmaleimide-based D-A Conjugated Polymer Film: Photo-Responsive Behavior and Application in Electrical Memory and Logic Gates

Solid-stated smart polymers responsive to external stimuli have attracted much attention for potential application in the field of photoelectron devices, logic gates, sensor, data storage and security. However, it is a bigger challenge for polymers than that for small molecules in solid state to acquire stimuli-responsive properties, because polymers with high molecular weight are not as easy to change the packing structure as small molecules under external stimulation. Here, a D-A type alternating copolymer PTMF-o containing 3,4-bisthienylmaleimide(A unit) and fluorene(D unit) is designed and synthesized. Upon irradiation of sunlight, PTMF-o film exhibits a photo-response with the color altering from purple to colorless. It is attributed to the structure of copolymer transformed from ring-opening form(PTMF-o) to ring-closure form(PTMF-c), resulting from the oxidative photocyclization of 3,4-bisthienylmaleimide unit. Consequently, the ability of charge transfer(CT) from fluorene to 3,4-bisthienylmaleimide unit in PTMF-o can be easily weakened by light stimuli. PTMF-o film displays a WORM-type resistive storage performance for the strong CT. Interestingly, after exposure, the electrical memory behavior in situ transfers into FLASH type, due to weak CT in PTMF-c. PTMF-o film can also be employed as smart material to construct NAND and NOR logic gates by using light as input condition. The work provides a simple way to modify the electronic properties of polymers and realize stimuli-response in solid states.     

Designed fabrication of mesoporous silica-templated self-assembled theranostic nanomedicines

Theranostic nanosystems that integrate diagnosis and therapy have garnered increasing attention for personalized medicine.The integration of the versatile nanoparticles to fabricate self-assembled theranostic nanomedicines becomes increasingly important in current medical research.Mesoporous silica nanoparticles(MSN)with their highly attractive physicochemical properties and favorable morphological attributes represent ideal templates for the controlled assembly and integration of functional nanomaterials to fabricate self-assembled theranostic nanomedicines.The rationally designed combination strategy and heterostructure will improve the overall bioavailability and preserve the unique property of each nanocomponent.In this review,the cutting-edge strategies for the designed fabrication of MSN-templated self-assembled nanomedicines are summarized.We categorize MSN-based nanomedicines by their unique heterostructures,including core-shell,yolk-shell,core-satellite,heterodimer and core-shell-satellite structures,and discuss the controlled assembly approaches as well as the intriguing applications for disease theranostics.Finally,a perspective on the challenges in the clinical translation of self-assembled theranostic nanomedicines is highlighted.     

Preparation,characterization and hydrodesulfurization performances of Co-Ni2P/SBA-15 catalysts

A series of Co-Ni2P/SBA-15 catalysts with various Co contents, Ni2P contents and P/Ni molar ratios were prepared by impregnating nickel nitrate, diammonium hydrogen phosphate, and then cobalt nitrate into SBA-15 support followed by temperature-programmed reduction in a H2 flow. The catalyst structure was characterized by X-ray diffraction(XRD), high resolution-transmission electron microscopy(HR-TEM)and N2adsorption-desorption techniques and their catalytic performance of the hydrodesulfurization(HDS) of dibenzothiophene(DBT) was evaluated. The effects of Co contents, Ni2 P contents and P/Ni molar ratios on the catalyst structure and HDS of DBT over the Co-Ni2P/SBA-15 catalyst were investigated. The results indicated that the mesoporous structure was mainly maintained and the nickel phosphides were well dispersed in all of the characterized catalysts. The 4Co-25Ni2P/SBA-15(P/Ni = 0.8) catalyst with the Co and Ni2 P contents of 4 wt% and25 wt%, respectively, and the P/Ni molar ratio of 0.8 showed the highest catalytic performance for HDS of DBT. Under the reaction conditions of 380?C and 3.0 MPa, the DBT conversion can reach 99.62%. The HDS of DBT proceeded mainly via the direct desulfurization(DDS)pathway with biphenyl(BP) as the dominant product on all of the catalysts and the BP selectivity was slightly enhanced after the introduction of Co promoters.     

h-ADAPTIVITY ANALYSIS BASED ON MULTIPLE SCALE REPRODUCING KERNEL PARTICLE METHOD

IntroductionAs one of the meshfree methods, multiple scale reproducing kernel particle method(RKPM)[1,2]bears, besides the common features of all meshfree methods, a uniqueinherent feature of multiresolution analysis by which the structural response can b…     

激光固体靶相互作用产生正电子的模拟研究

采用Monte Carlo程序Geant4对激光固体靶相互作用正电子产生进行了研究。研究了超热电子能量分布函数对正电子产生的影响,结果表明采用不同的分布函数,最多可致正电子产额约3倍的差异,分布函数的最大截止能量在30 MeV以上时正电子产额趋于饱和。研究了正电子产生与超热电子发散角的关联,结果表明发散角模型对正电子产额影响不大,而正电子角分布对超热电子发散角较为敏感,且靶背鞘场对正电子发散角的减小贡献巨大。模拟结果显示靶厚度的增加可导致正电子发散角的增大,而当靶厚度超过2mm时,发散角基本保持不变。此外,模拟了超热电子发散角、靶厚度及靶背鞘场对正电子电子份额比及正电子γ份额比角分布的影响。