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通过对低压化学气相沉积(LPCVD)系统进行改造,实现在沉积Si_3N_4薄膜前的原位等离子体氮化处理,氮等离子体可以有效地降低器件界面处的氧含量和悬挂键,从而获得了较低的LPCVD-Si_3N_4/GaN界面态,通过这种技术制作的MIS-HEMTs器件,在扫描栅压范围V_(G-sweep)=(-30 V,+24 V)时,阈值回滞为186 mV,据我们所知为目前高扫描栅压V_(G+)(20 V)下的最好结果.动态测试表明,在400 V关态应力下,器件的导通电阻仅仅上升1.36倍(关态到开态的时间间隔为100μs). 相似文献
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Gallium Nitride (GaN) room temperature α particle detectors are fabricated and characterized, whose device structure is Schottky diode. The current-voltage (I- V) measurements reveal that the reverse breakdown voltage of the detectors is more than 200 V owing to the consummate fabrication processes, and that the Schottky barrier and ideal factor of the detectors are 0.64 eV and 1.02, respectively, calculated from the thermionic transmission model. ^241Am α particles pulse height spectra from the GaN detectors biased at -8 V is obviously one Gauss peak located at channel 44 with the full width at half maximum (FWHM) of 15.87 in channel. One of the main reasons for the relatively wider FWHM is that the air between the detectors and isotope could widen the spectrum. 相似文献
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We report an Al_(0.25)Ga_(0.75)N/Ga N based lateral field emission device with a nanometer scale void channel. A~45 nm void channel is obtained by etching out the SiO_2 sacrificial dielectric layer between the semiconductor emitter and the metal collector. Under an atmospheric environment instead of vacuum conditions, the Ga Nbased field emission device shows a low turn-on voltage of 2.3 V, a high emission current of ~40 μA(line current density 2.3 m A/cm) at a collector bias VC = 3 V, and a low reverse leakage of 3 nA at VC =-3 V. These characteristics are attributed to the nanometer scale void channel as well as the high density of two-dimensional electron gas in the Al Ga N/Ga N heterojunction. This type of device may have potential applications in high frequency microelectronics or nanoelectronics. 相似文献
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研究不同界面处理对AlGaN/GaN金属-绝缘层-半导体(MIS)结构的高电子迁移率晶体管(HEMT)器件性能的影响。采用N_2和NH_3等离子体对器件界面预处理,实验结果表明,N_2等离子体预处理能够减小器件的电流崩塌,通过对N_2等离子体预处理的时间优化,发现预处理时间10 min能够较好地提高器件的动态特性,30 min时动态性能下降。进一步引入AlN作为栅介质插入层并经过高温热退火后能够有效提高器件的动态性能,将器件的阈值回滞从411 mV减小至111 mV,动态测试表明,在900 V关态应力下,器件的电流崩塌因子从42.04减小至4.76。 相似文献
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本文采用水热法制备了γ-Bi_2Sn_2O_7并研究了其在可见光区的光电响应。Bi_2Sn_2O_7的晶体结构和光电响应特性分别用X射线衍射和表面光电压谱进行表征。研究结果表明,合成的Bi_2Sn_2O_7呈现γ相立方结构,通过吸收光谱估算光学带隙为2.67 e V,比α-Bi_2O_3(2.85 e V)的光学带隙小。Bi_2Sn_2O_7的光电响应相对于α-Bi_2O_3在可见光区展现出一定的优势,同时对外加电压有很强的响应。 相似文献
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量子噪声温度计系统可通过比较导体中电子运动的热噪声和量子电压参考噪声精密测量玻尔兹曼常数,其中量子电压噪声源所合成的量子电压参考噪声由一组超导约瑟夫森结阵产生.本文详细介绍了基于Nb/Nb_xSi_(1-x)/Nb约瑟夫森结的量子电压噪声源芯片的设计、制备及测试;采用脉冲驱动模式,合成了具有量子精度的100 kHz交流量子电压信号.结果表明:本文所研制的噪声温度计核心芯片已具备了合成交流电压的功能,可为后续玻尔兹曼常数精密定值、重新定义及复现热力学温度研究提供核心器件. 相似文献
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