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利用微波电子回旋共振等离子体增强非平衡磁控溅射法在不同N2流量下制备无氢SiNx薄膜.通过X光电子能谱、纳米硬度仪等表征技术,研究了不同N2流量下制备的SiNx薄膜的化学键结构、化学键含量、元素配比及各元素沿深度分布.研究结果表明,N2流量是影响SiNx薄膜化学键结构、元素配比、元素延深度分布等性质的主要因素.在N2流量为1 sccm的条件下制备的SiNx薄膜呈富Si态;在N2流量为2 sccm的条件下制备的SiNx薄膜中Si-N键含量最高,可达到94.8%,化学吸附主要发生在薄膜表面,同时薄膜具有较好的机械性能,硬度值可达到22.9 GPa;在N2流量为20 sccm条件下制备的SiNx薄膜,薄膜表面含有46.8%的N-Si-O键及18.6%的Si-O键结构,薄膜内部含有36.8%的N-Si-O键及12.5%的Si-O键结构,表明薄膜结构疏松,在空气中易被氧化,化学吸附在薄膜表面及内部同时发生,因此薄膜具有较差的机械性能,硬度值仅为12 GPa. 相似文献
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采用射频磁控溅射的方法,在Si(100)基片上制备了纳米β-FeSi2/Si多层结构,利用X射线衍射、透射电子显微镜、光致发光光谱等表征技术,研究了β-FeSi2/Si多层结构的结构、成分和光致发光特性.研究结果表明:利用磁控溅射法得到的Fe/Si多层膜,室温下能够检测到β-FeSi2的1.53 μm处光致发光信号;未退火时多层膜是(非晶的FeSi2+β-FeSi2颗粒)/非晶Si结构,退火后则是β-FeSi2颗粒/(晶体Si+非晶Si)结构;退火前后样品有相同的PL信号强度,说明非晶的FeSi2+β-FeSi2颗粒和β-FeSi2颗粒可以产生同样的发光性能.实验测出1.53 μm处PL信号也进一步证明了非晶FeSi2的半导体性能. 相似文献
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用脉冲偏压电弧离子镀通过控制不同的氮流量在(100)单晶Si基片上制备了不同成分的CNx薄膜.用光学显微镜,XPS,XRD,激光Raman和Nanoindenter等方法研究了薄膜的形貌、成分、结构和性能.结果表明,薄膜表面平整致密、氮含量随着氮流量的降低而降低、结构为非晶且为类金刚石薄膜;随着氮含量从18.9%降低到5.3%(摩尔百分比,全文同),薄膜的硬度和弹性模量单调增加而且增幅较大,其中硬度从15.0 GPa成倍增加到30.0 GPa;通过氮流量的调整能够敏感地改变薄膜中的sp3键的含量,是CNx薄膜的硬度和弹性模量获得大幅度凋整的本质原因. 相似文献
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Deposition of Diamond-Like carbon Films by High-Intensity Pulsed Ion Beam Ablation at Various Substrate Temperatures
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Diamond-like carbon (DLC) films have been deposited on to Si substrates at substrate temperatures from 255℃ to 400O℃ by a high-intensity pulsed-ion-beam (HIPIB) ablation deposition technique. The formation of DLC is confirmed by Raman spectroscopy. According to an x-ray photoelectron spectroscopy analysis, the concentration of sp^3 carbon in the films is about 40% when the substrate temperature is below 300℃ C. With increasing substratetemperature from 25℃ to 400℃, the concentration of sp^3 carbon decreases from 43% to 8%. In other words,sp3 carbon is graphitized into sp^2 carbon when the substrate temperature is above 300℃. The results of xray diffraction and atomic force microscopy show that, with increasing the substrate temperature, the surface roughness and the friction coefficient increase, and the microhardness and the residual stress of the films decrease. 相似文献
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Deposition of Hydrogen-Free Silicon Nitride Thin Films by Microwave ECR plasma Enhanced Magnetron Sputtering at Room Temperature
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Hydrogen-free silicon nitride (SiNx) films were deposited at room temperature by microwave electron cyclotron resonance (MW-ECR) plasma enhanced unbalance magnetron sputtering system. Both Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy are used to study the bonding type and the change of bonding structures of the silicon nitride films. The results indicate that the chemical structure and composition of SiNx films deposited by this technique depend strongly on the N2 flow rates, the stoichiometric SiNx film, which has the highest hardness of 22.9 GPa, could be obtained at lower N2 flow rate of 4 sccm. 相似文献
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The low temperature specific heat of Sm-Al-Co ternarymetallic glasses is investigated and a clear anomaly associated withthe Boson peak is identified. While this anomaly depends slightly onthe chemical composition, it has no dependence on external magneticfield. To figure out the mechanism of the Boson peak, we interpretthe data within various model frameworks. Unlike earlierwork, our study shows that this Boson peak is mainly ascribed to anadditional T2 term of the specific heat, which may originatefrom the quasi-two-dimensional and short-range ordered structureunits possibly existing in the metallic glasses. 相似文献
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用线圈电流控制非平衡磁场,用汤森放电击穿形成深度自触发放电,用磁阱捕获放电形成的二次电子和导致漂移电流,形成了高功率非平衡磁控溅射放电。采用偏压为-100V相对磁控靶放置的圆形平面电极收集饱和离子电流;在距离磁控靶14cm的位置由Langmuir探针测量浮置电位;示波器测量磁控靶的脉冲电压、电流、浮置电位和饱和离子电流信号。装置的放电脉冲功率达到0.9MW,脉冲频率最大值为40Hz左右,空间电荷限制条件是控制电子电流和离子电流的主要机制。 相似文献
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用线圈电流控制非平衡磁场,用汤森放电击穿形成深度自触发放电,用磁阱捕获放电形成的二次电子和导致漂移电流,形成了高功率非平衡磁控溅射放电。采用偏压为-100V相对磁控靶放置的圆形平面电极收集饱和离子电流;在距离磁控靶14cm的位置由Langmuir探针测量浮置电位;示波器测量磁控靶的脉冲电压、电流、浮置电位和饱和离子电流信号。装置的放电脉冲功率达到0.9MW,脉冲频率最大值为40Hz左右,空间电荷限制条件是控制电子电流和离子电流的主要机制。 相似文献
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利用团簇成分式方法设计系列低密度Co基高温合金[Al-(Co8Ni4)]((Al0.5(Ti/Nb/Ta)0.5Mo0.5)(Mo0.5Cr0.5Co0.5))(=Co8.5Ni4Al1.5Mo1.0Cr0.5(Ti/Nb/Ta)0.5),采用真空非自耗电弧炉制备合金铸锭,并对其在1300℃固溶15h,在900℃下进行长期时效处理,进而对时效态样品进行微观组织表征和力学性能测试.结果表明,当Ti/Nb/Ta,Ti/Nb和Ti/Ta以等物质的量比匹配时,3种合金的微观组织均表现为立方形γ’相均匀地分布在γ基体中,这取决于合金适中的γ/γ’点阵错配度(0.27%—0.34%).在900℃长期时效过程中,3种合金中的γ’相均具有较小的粗化速率,且合金的显微硬度随时效时间基本不发生变化(27... 相似文献