纳米晶体光催化剂降解染料废水的最新研究进展

本文综述了近期光催化降解染料废水的研究进展，从光催化剂、反应条件、光降解反应产物及光催化降解染料废水的应用性四个方面介绍了其研究现状，指出今后的研究方向将集中在新型光催化剂的开发及光催化剂表面改性、光催化体系、光催化降解染料的反应机理及光催化剂与其它水处理技术的结合。     

Improved thermal property of strained InGaAlAs/AlGaAs quantum wells for 808-nm vertical cavity surface emitting lasers

The 808-nm vertical cavity surface emitting laser (VCSEL) with strained In_0.13Ga_0.75Al_0.12As/Al_0.3Ga_0.7As quantum wells is designed and fabricated. Compared with the VCSELs with Al_0.05Ga_0.95As/Al_0.3Ga_0.7As quantum wells, the VCSEL with strained In_0.13Ga_0.75Al_0.12As/Al_0.3Ga_0.7As quantum wells is demonstrated to possess higher power conversion efficiency (PCE) and better temperature stability. The maximum PCE of 43.8% for 10-μm VCSEL is achieved at an ambient temperature of 30 ℃. The size-dependent thermal characteristics are also analyzed by characterizing the spectral power and output power. It demonstrates that small oxide-aperture VCSELs are advantageous for temperature-stable performance.     

Photon higher-order squeezing effects of the q analogue of a single-mode field interacting with a Ξ-type three-level atom

The nonlinear theory of interaction between the q analogue of a single-mode field and a Ξ-type threelevel atom has been established. And the formal solution of the Schrodinger equation in the representation and its average number are obtained. Then, the photon squeezing effects are studied through numerical calculation. The results show that the q deformation nonlinear action has a lot of influence on the quantum coherence and quantum properties. When q approaches 1, the theory reduces to the common linear theory.     

Heterogeneous integration of InP HEMTs on quartz wafer using BCB bonding technology

Heterogeneous integrated InP high electron mobility transistors(HEMTs)on quartz wafers are fabricated successfully by using a reverse-grown InP epitaxial structure and benzocyclobutene(BCB)bonding technology.The channel of the new device is In_0.7Ga_0.3As,and the gate length is 100 nm.A maximum extrinsic transconductance gm,max of 855.5 mS/mm and a maximum drain current of 536.5 mA/mm are obtained.The current gain cutoff frequency is as high as 262 GHz and the maximum oscillation frequency reaches 288 GHz.In addition,a small signal equivalent circuit model of heterogeneous integration of InP HEMTs on quartz wafer is built to characterize device performance.     

Design and fabrication of a compact multimode interference splitter with silicon photonic nanowires

A compact multimode interference （MMI） splitter with silicon photonic nanowires on silicon-on-insulator （SOI） substrate is designed and fabricated. The footprint of the MMI section is only approximately 3×10 （μm）. The simulation results show that the device may have a low excess loss of 0.04 dB. The transmission loss of the silicon photonics wire is measured to be 0.73±0.3 dB/mm. The compact size and low transmission loss allow the device to be used in ultra-compact photonic integrated circuits. The device exhibits a good light splitting function. In a spectral range of 1549-1560 nm, the excess loss is 1.5 dB and the average imbalance between the two channels is 0.51 dB.     

Extrinsic equivalent circuit modeling of InP HEMTs based on full-wave electromagnetic simulation

With the widespread utilization of indium-phosphide-based high-electron-mobility transistors (InP HEMTs) in the millimeter-wave (mmW) band, the distributed and high-frequency parasitic coupling behavior of the device is particularly prominent. We present an InP HEMT extrinsic parasitic equivalent circuit, in which the conductance between the device electrodes and a new gate-drain mutual inductance term L_mgd are taken into account for the high-frequency magnetic field coupling between device electrodes. Based on the suggested parasitic equivalent circuit, through HFSS and advanced design system (ADS) co-simulation, the equivalent circuit parameters are directly extracted in the multi-step system. The HFSS simulation prediction, measurement data, and modeled frequency response are compared with each other to verify the feasibility of the extraction method and the accuracy of the equivalent circuit. The proposed model demonstrates the distributed and radio-frequency behavior of the device and solves the problem that the equivalent circuit parameters of the conventional InP HEMTs device are limited by the device model and inaccurate at high frequencies when being extracted.     

Beam Steering Analysis in Optically Phased Vertical Cavity Surface Emitting Laser Array

Beam steering in implant defined coherently coupled vertical cavity surface emitting laser(VCSEL) arrays is simulated using the FDTD solution software. Angular deflection dependent on relative phase differences among elements, inter-element spacing, element size and emitted wavelength is analyzed detailedly and systematically.We design and fabricate 1×2 implant defined VCSEL arrays for optimum beam steering performance. Electronically controlled beam steering with a maximum deflection angle of 1.6° is successfully achieved in the 1×2 VCSEL arrays. The percentage of the power in the central lobe is above 39% when steering. The results show that the steering is controllable. Compared with other beam steering methods, the fabrication process is simple and of low cost.     

High-k材料研究进展与存在的问题

随着集成电路的飞速发展，SiO2作为传统的栅介质将不能满足MOSFET器件高集成度的要求，需要一种新型Hish-k材料来代替传统的SiO2，这就要综合考虑以下几个方面问题：(1)介电常数和势垒高度；(2)热稳定性；(3)薄膜形态；(4)界面质量；(5)与Si基栅兼容；(6)工艺兼容性；(7)可靠性。本文综述了几类High-k栅介质材料的研究现状及存在的问题。目前任何一种有望替代SiO2的栅介质材料都不能完全满足上述几点要求。但是，科学工作者们已经发现了几种有希望的Hihg-k候选材料。     

Uneven splitting-ratio 1×2 multimode interference splitters based on silicon wire waveguides

Two types of 1×2 multi-mode interference(MMI) splitters with splitting ratios of 85:15 and 72:28 are designed.On the basis of a numerical simulation,an optimal length of the MMI section is obtained.Subsequently,the devices are fabricated and tested.The footprints of the rectangular MMI regions are only 3×18.2 and 3×14.3(μm).The minimum excess losses are 1.4 and 1.1 dB.The results of the test on the splitting ratios are consistent with designed values.The devices can be applied in ultra-compact photonic integrated circuits to realize the "tap" function.     

High frequency doubling efficiency THz GaAs Schottky barrier diode based on inverted trapezoidal epitaxial cross-section structure

A high-performance terahertz Schottky barrier diode (SBD) with an inverted trapezoidal epitaxial cross-sectional structure featuring high varactor characteristics and reverse breakdown characteristics is reported in this paper. Inductively coupled plasma dry etching and dissolution wet etching are used to define the profile of the epitaxial layer, by which the voltage-dependent variation trend of the thickness of the metal-semiconductor contact depletion layer is modified. The simulation of the inverted trapezoidal epitaxial cross-section SBD is also conducted to explain the physical mechanism of the electric field and space charge region area. Compared with the normal structure, the grading coefficient M increases from 0.47 to 0.52, and the capacitance modulation ratio (C_max/C_min) increases from 6.70 to 7.61. The inverted trapezoidal epitaxial cross-section structure is a promising approach to improve the variable-capacity ratio by eliminating the accumulation of charge at the Schottky electrode edge. A 190 GHz frequency doubler based on the inverted trapezoidal epitaxial cross-section SBD also shows a doubling efficiency of 35% compared to that 30% of a normal SBD.