Effects of high pressure on the Raman and fluorescence emission spectra of two novel 1,3,4-oxadiazole derivatives

The effects of pressure on the fluorescence emission and Raman spectra of 1,4-bis[（4-methyloxyphenyl）-1,3,4-oxadiazolyl]- 2,5-bisheptyloxyphenylene （OXD-2） and on the fluorescence emission spectra of 1,4-bis[（4-methylphenyl）- 1,3,4-oxadiazolyl]phenylene （OXD-1） are investigated using a diamond anvil cell. With the increase of pressure, the intensity of the fluorescence emission increases and reaches maxima at 13GPa for OXD-1 and at 9.6GPa for OXD-2. The effect of pressure on the peak position of the emission shows a similar trend, red shift with the increase of pressure. But at higher pressures, the intensity of emission drops down dramatically. The Raman spectra of OXD-2 indicate that there appears a structural change at ca 3GPa.     

新型1,3,4-噁二唑衍生物的能带结构及其对器件性能的影响

利用紫外-可见吸收光谱和电化学方法表征了三个系列新型的1,3,4-噁二唑类化合物的能级结构.设计并制备了以噁二唑衍生物与MEH-PPV的共混物作为发光层的电致发光器件(LED),比较了不同结构噁二唑引入发光层后对器件性能的影响.研究结果表明,以共混物为发光层的LED,其最大亮度可达到11810cd/m2(8.5V),最大流明效率为1.1cd/A.与纯MEH-PPV单层发光器件相比,最大亮度提高了约40倍.结果表明,噁二唑类衍生物具有优良的电子传输特性,将其引入发光层能有效地提高LED的性能.     

Effects of Temperature and Pressure on a Novel 1,3,4-Oxadiazole Derivative

The electrical resistivity variation of 1,4-bis[(4-methylphenyl)-1,3,4-oxadiazolyl]phenylene (OXD-1) microcrystal is studied under variable pressure and temperature conditions by a quasi four-probe method in a diamond anvil cell. The sample resistivity is calculated with a finite element analysis method. The temperature and pressure dependencies of resistivity of OXD-1 microcrystal are measured up to 150℃ and 15 GPa. The resistivity decrease with temperature increasing indicates that OXD-1 exhibits an organic-semiconductor transport property in the experimental pressure region. With pressure increasing, the resistivity of OXD-1 increases firstly and reaches the maximum at about 6.2 GPa, and then begins to decrease as the pressure increases continuously. In situ x-ray diffraction data under pressure provide obvious prove that the anomaly of resistivity variation at 6.2 GPa is caused by the pressure-induced amorphism of OXD-1.     

一种新的恶二唑衍生物在金刚石对顶砧中的电阻率随压力和温度的变化关系

利用金刚石对顶砧测量了恶二唑衍生物微晶, 1,4-bis[(4-methyloxyphenyl)-1,3,4-oxadiazolyl]- 2,5-bisheptyloxyphenylene (OXD-2), 电阻随压力和温度的变化关系，并利用有限元分析方法计算了样品的电阻率。实验中，测量压力和温度达到了16 GPa和150℃。样品的电阻率随着温度的升高而降低，说明样品表现出半导体传导特性。在90-100 ℃之间，样品的电阻率有一明显的下降，说明这时发生了温度诱导的相变。随着压力的增加，样品的电阻率在6GPa左右达到最大值，此后随着压力的增加而下降。结合原位x光数据，在6GPa左右的电阻突变应该是由于样品在压力的诱导下发生了无序化的相变。