Study of the charge-exchange reactions\pi ^ - p \to (\pi ^0 ,\eta ,\eta \prime )n at 63 GeV

Muon electron pairs were detected in an Al multiplate spark chamber, exposed to a neutrino beam from the CERN PS. The leptons were not accompanied by other particles, except occasionally by protons. The background came mainly from muon associated π⁰ production, with one decay gamma lost. It was determined empirically, together with the small contribution from υ _e reactions. For electron energies above 2 GeV the background is 5.7±1.5 events, whereas 18 (μe)-candidates have been observed. Hence the effect is established, with a rate of about 10^?4 as compared to the muonic reactions above 3 GeV. Charm creation as the origin of this (μe)-production process is excluded; heavy neutral lepton production does not fit the kinematics observed. Instead the events are compatible with the two-body decay of an object with variable invariant mass of order 1 GeV, possibly resulting from axion interactions.     

Measurements of theg-factor ratio of the first 3− and 5− states in40Ca and the lifetime of the 5− state

[Theg-factor ratio of the first excited 3^? and 5^? states in⁴⁰Ca was measured to beg ₃/g ₅=1.01(10) employing the implantation perturbed angular correlation technique. The static hyperfine fields (SF) in Fe and Gd hosts were used. In addition the lifetime of the 5^? state was measured to be τ=426(7)ps. The values of the SF in Gd and Fe hosts were deduced and compared with systematics in this element region.     

Extended X-ray absorption fine structure studies of thulium doped GaN epilayers

The local structure of Tm³⁺ ions incorporated into GaN epilayers was studied by means of Extended X-ray Absorption Fine Structure. The samples were doped either in situ during growth by Molecular Beam Epitaxy or by ion implantation of layers grown by Metal Organic Chemical Vapour Deposition. The implantation was done at ion energy of 300 keV and different nominal fluences of 3×10¹⁵, 4×10¹⁵ cm⁻² and 5×10¹⁵ cm⁻². The concentration of Tm in the samples studied was measured by Wavelength Dispersive X-ray analysis. For the in situ doped sample with concentration of 0.5%, and for all of the implanted samples, Tm was found on the Ga site in GaN. The ion implanted sample and an in situ doped sample with a similar concentration of Tm showed the same local structure, which suggests that the lattice site occupied by Tm does not depend on the doping method. When the average Tm concentration for in situ doped samples is increased to 1.2% and 2.0%, Tm is found to occupy the Ga substitutional site and the presence of a substantial number of Tm ions in the second coordination sphere indicates dopant clustering in the films. The formation of pure TmN clusters was found in an in situ doped sample with a dopant concentration of 3.4%.     

On the Existence of Focal Points near Closed Geodesics on Surfaces

We establish some criteria for the existence or nonexistence of focal points near closed geodesics on surfaces. These criteria are in terms of the curvature of the manifold along the closed geodesic and the average values of the partial derivatives of the curvature in the direction perpendicular to the geodesic. Our criteria lead to a new family of examples of surfaces with no focal points. We also show that if S is a compact surface with no focal points and an inequality relating the curvature of the surface to the curvature of the horocycles holds, then the horocycles (considered as curves in S) are uniformly C ^2+Lipschitz.     

Plunger measurements on highly stripped O-ions as tool for detecting electron polarization on emergence from thin ferromagnetic layers

From hyperfine interaction studles on free single electron¹⁶O(3⁻) ions. in a time differential mode using the recoil distance technique. It is shown that these ions are polarized when emerging from magnetized thin layers of Fe. The observed degree of polarization , however, is smaller than expected from transient field measurements.     

New aspect in transient magnetic fields using heavy ion beams

Transient field precessions have been measured with the first excited 2 ₁ ⁺ -state as probe for ions of²⁸Si traversing Fe at v_ion?1v₀ and 13v₀(v₀=c/137) and⁶²Ni being stopped in Fe. The degree of polarization deduced for the Si ions, p_1s=0.19(6), is consistent with low-velocity data. There is clear evidence that the field strength is attenuated by heavy ion beams. For the⁶²Ni(2 ₁ ⁺ ) state at 1.173 MeV a g-factor value of g=0.34(7) was obtained in good agreement with a previous result.