Surface charging behaviors of electrocatalytic interfaces with partially charged chemisorbates

The surface charge is a key concept in electrochemistry. Mathematically, the surface charge is obtained from a spatial integration of the volume charge along a particular direction. Ambiguities thus arise in choosing the starting and ending points of the integration. As for electrocatalytic interfaces, the presence of chemisorbates further complicates the situation. In this minireview, I adopt a definition of the surface charge within a continuum picture of the electric double layer. I will introduce surface charging behaviors of firstly ordinary electrochemical interfaces and then electrocatalytic interfaces featuring partially charged chemisorbates. Particularly, the origin of nonmonotonic surface charging behaviors of electrocatalytic interfaces is explained using a primitive model. Finally, a brief account of previous studies on the nonmonotonic surface charging behavior is presented, as a subline of the spectacular history of electric double layer.     

The deformed Hermitian-Yang-Mills equation on almost Hermitian manifolds

In this paper,we consider the deformed Hermitian-Yang-Mills equation on closed almost Hermitian manifolds.In the case of the hypercritical phase,we derive a priori estimates under the existence of an admissible C-subsolution.As an application,we prove the existence of solutions for the deformed Hermitian-Yang-Mills equation under the condition of existence of a supersolution.     

微区X射线荧光成像技术在岩心分析中的应用

微区X射线荧光（Micro-XRF）分析技术是通过微小的X射线光束照射样品，对样品进行原位成分观测的无损分析手段之一，具有灵敏度高、速度快和准确性高的特点。采用微区X射线荧光光谱仪（M6 JETSTREAM）对安徽铜陵冬瓜山铜矿床四段岩心样品进行面扫描，分析不同矿层共17种元素区域分布特征、空间分布规律及组合关系等，结果表明：（1）Cu和Fe两种成矿元素高值空间分布区域基本不重叠，S与Fe分布范围高度重叠，关系密切，微量元素Ni，Bi，Pb，Zn，Si，Na与Cu密切相关，而Ti，Al，K与Fe具有弱相关性；（2）垂向上，Fe元素含量随深度增加逐步增大，而Cu元素含量呈降低趋势，其他元素也随深度呈下降趋势；（3）元素分布受石炭纪中期海底喷流沉积成矿作用和岩浆热液成矿作用叠加改造作用明显；（4）该钻孔矿石矿物以磁黄铁矿、黄铜矿和黄铁矿为主，垂向上组合规律明显，脉石矿物以石英、石榴子石和透辉石为主。该技术通过分析元素空间分布规律、相关性以及矿物组合和分配关系等可对元素富集和运移以及对矿床的成矿机制、成因模式等地质环境和地质过程提供新认识和新证据。结合矿床地球化学特征的分布模式，微量元素可作为寻找主矿种的指示元素，为深部找矿提供依据。此外，该技术能作为预分析技术快速筛选出感兴趣的信息和位置，为后期各种更高精度的微区分析提供不同尺度、不同层次的元素分布信息。     

A Delayed HIV Infection Model with the Homeostatic Proliferation of CD4+ T Cells

Acta Mathematicae Applicatae Sinica, English Series - In this paper, we investigate a delayed HIV infection model that considers the homeostatic proliferation of CD4+ T cells. The existence and...     

Quantum State Sharing Under Noisy Environment

International Journal of Theoretical Physics - Quantum state sharing (QSS) plays significant role in transmitting quantum secret information. However, in practical quantum communication situation,...     

Nonlinear compressed sensing-based adaptive modal shapes selection approach for efficient dynamic response analysis of flexible multibody system

Nonlinear Dynamics - The modal truncation is usually used in the dynamic response analysis of flexible multibody systems, in which, appropriate selection of modal shapes is very critical to achieve...     

CdS/Si nanofilm heterojunctions based on amorphous silicon films:Fabrication,structures,and electrical properties

Shortening the distance between the depletion region and the electrodes to reduce the trapped probability of carriers is a useful approach for improving the performance of heterojunction.The CdS/Si nanofilm heterojunctions are fabricated by using the radio frequency magnetron sputtering method to deposit the amorphous silicon nanofilms and Cd S nanofilms on the ITO glass in turn.The relation of current density to applied voltage(I-V)shows the obvious rectification effect.From the analysis of the double logarithm I-V curve it follows that below~2.73 V the electron behaviors obey the Ohmic mechanism and above~2.73 V the electron behaviors conform to the space charge limited current(SCLC)mechanism.In the SCLC region part of the traps between the Fermi level and conduction band are occupied,and with the increase of voltage most of the traps are occupied.It is believed that Cd S/Si nanofilm heterojunction is a potential candidate in the field of nano electronic and optoelectronic devices by optimizing its fabricating procedure.     

基于Kronecker型替换的黑盒多项式稀疏插值

本文基于新的Kronecker型替换,给出两个由黑盒表示的稀疏多项式的新确定性插值算法.令f∈R[x1,……,xn]是一个稀疏黑盒多项式,其次数上界为D.当R是C或者是有限域时,相对于已有算法,新算法具有更好的计算复杂度或者关于D的复杂度更低.特别地,对于一般黑盒模型,D是复杂度中的主要因素,而在所有的确定性算法中,本文的第二个算法的复杂度关于D是最低的.